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Diodes Incorporated DGD2003S8-13
- Part No.:
- DGD2003S8-13
- Manufacturer:
- Diodes Incorporated
- Category:
- Gate Drivers
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
DGD2003S8-13.pdf
- Description:
- IC GATE DRVR HALF-BRIDGE 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:30,171
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Product details
Overview
DGD2003S8-13 from Diodes Incorporated is a high-voltage half-bridge gate driver IC designed to drive two N-channel MOSFETs in motor control and power conversion topologies. It features 200V high-side bootstrap operation, 290mA source / 600mA sink output current, 420ns typical internal deadtime, and TTL/CMOS-compatible logic inputs down to 3.3V. It operates across –40°C to +125°C in SO-8 package and is used in battery-powered power tools and light electric vehicles.
For engineers reviewing the DGD2003S8-13 datasheet, DGD2003S8-13 pinout, DGD2003S8-13 application, or DGD2003S8-13 equivalent, key selection criteria include high-side floating voltage capability (200V), output drive strength (290mA/600mA), fixed deadtime (420ns), logic-level compatibility (3.3V–5V), and extended temperature range (–40°C to +125°C).
Technical Context
The DGD2003S8-13 integrates independent high-side and low-side drivers with separate supply domains: VB/VS for high-side floating operation and VCC/COM for low-side logic and supply. Its Schmitt-triggered HIN/LIN* inputs tolerate slow-rising signals and reject noise, while undervoltage lockout (UVLO) independently monitors both VCC (8.9V typ) and VB–VS (5.5V typ) to prevent shoot-through during brownout conditions.
It implements fixed internal deadtime (420ns typ) between HO and LO transitions to ensure safe commutation of half-bridge MOSFETs. The driver outputs are optimized for fast switching: tR ≤ 170ns and tF ≤ 90ns into 1000pF load, with propagation delays of 680ns (tON, VS = 0V) and 220ns (tOFF, VS = 200V), enabling efficient operation up to ~200kHz in typical motor drive applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| High-Side Floating Voltage | 200V max - enables direct bootstrap operation in 100V-class DC bus systems without external level shifters |
| Output Drive Current | 290mA source / 600mA sink - sufficient to rapidly charge/discharge 1000–2000pF gate capacitances at >100kHz |
| Internal Deadtime | 420ns typical - prevents cross-conduction in half-bridge configurations without external timing circuitry |
| Logic Input Compatibility | 3.3V–5V TTL/CMOS - interfaces directly with microcontrollers, FPGAs, and PWM controllers without level translation |
| Operating Temperature | –40°C to +125°C - supports under-hood and industrial motor drive environments without derating |
| Supply Voltage Range | VCC: 10V–20V; VB–VS: 10V–200V - accommodates wide input bus ranges in battery-powered inverters |
| Propagation Delay Match | ≤60ns mismatch - ensures symmetrical timing between HO and LO edges for balanced bridge conduction |
Pinout & Package
Package: SO-8 (Type TH), surface-mount, lead-free, RoHS-compliant, moisture sensitivity level 3 per J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 VCC | Low-side and logic supply input | Provides power for internal logic and low-side driver; must be decoupled near pin |
| 2 HIN | High-side logic input | In-phase control signal for HO output; Schmitt-triggered for noise immunity |
| 3 LIN* | Low-side logic input (active-low) | Inverted control signal for LO output; * denotes active-low polarity |
| 4 COM | Logic and low-side return path | Common reference for VCC, HIN, LIN*, and LO; must connect to low-side ground plane |
| 5 LO | Low-side gate drive output | Drives N-MOSFET source-connected to COM; capable of 600mA sink current |
| 6 VS | High-side floating supply return | Reference node for high-side driver; tied to source of high-side MOSFET in bootstrap configuration |
| 7 HO | High-side gate drive output | Drives N-MOSFET gate referenced to VS; tolerant to negative transients down to VS–0.3V |
| 8 VB | High-side floating supply input | Connects to bootstrap capacitor top; supplies high-side driver up to 224V absolute rating |
Key Features
| Feature | Design Value |
|---|---|
| Floating high-side driver | Supports bootstrap operation up to 200V VS offset - eliminates need for isolated supplies in cost-sensitive half-bridge designs |
| Integrated deadtime control | Fixed 420ns internal delay - removes external RC timing components and improves timing consistency over temperature and voltage |
| Robust output stage | 290mA source / 600mA sink with transient tolerance - reduces external gate resistor requirements and improves EMI performance |
| Independent UVLO monitoring | Separate thresholds for VCC (8.9V) and VB–VS (5.5V) - prevents unsafe switching during partial supply faults in multi-rail systems |
| Schmitt-trigger inputs | Hysteresis ≥1.7V on HIN/LIN* - rejects noise on long PCB traces in noisy motor drive environments |
Applications
| Battery-Powered Power Tools | Light Electric Vehicles (LEV) |
|---|---|
Use Scenario: Cordless drill/driver with 18–40V Li-ion battery pack and brushed or BLDC motor. IC Role / Device Role: Half-bridge gate driver controlling upper/lower N-MOSFETs in motor H-bridge or 3-phase inverter stage. Use Value: 200V high-side rating accommodates voltage spikes during motor commutation; 420ns deadtime prevents shoot-through during rapid direction reversal. | Use Scenario: 36–72V e-bike or e-scooter controller driving sensored/sensorless BLDC motor. IC Role / Device Role: Gate driver for phase-leg switching in 3-phase inverter, paired with external bootstrap diodes and capacitors. Use Value: –40°C to +125°C operation ensures reliability in outdoor ambient extremes; 3.3V logic compatibility enables direct interface with ARM Cortex-M microcontrollers. |
| Industrial Motor Drives | Home Appliance Inverters |
Use Scenario: Compact 100W–500W variable-speed pump or fan drive using discrete N-MOSFETs. IC Role / Device Role: High-efficiency half-bridge driver in compact inverter stage with minimal external components. Use Value: SO-8 thermal resistance (200°C/W) allows operation at full load without heatsink in forced-air-cooled enclosures. | Use Scenario: Inverter-driven washing machine drum motor with field-oriented control (FOC). IC Role / Device Role: Gate driver for three half-bridge legs in 3-phase inverter, requiring precise timing and shoot-through protection. Use Value: ≤60ns HO/LO delay matching ensures balanced PWM duty cycles across phases, reducing torque ripple and acoustic noise. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar half-bridge gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IR2104PbF | Lower high-side voltage rating (600V but only 200V recommended for bootstrap); no integrated deadtime; requires external timing network | Used in lower-cost AC mains inverters where external deadtime tuning is acceptable | Select when design flexibility in deadtime adjustment is required and board space permits external RC network |
| LM5109BMAX | Higher drive current (1A sink); adjustable deadtime via external resistor; no Schmitt inputs; higher quiescent current (1.2mA vs 0.5mA) | Preferred in high-frequency (>300kHz) SMPS where precise deadtime control and faster switching are critical | Select when >600mA sink current or programmable deadtime is mandatory, and higher IQ is acceptable |
Compared with IR2104PbF and LM5109BMAX, the DGD2003S8-13 offers integrated deadtime and Schmitt inputs in a smaller footprint, making it optimal for space-constrained, noise-prone motor control applications where fixed timing and robust logic interfacing are prioritized over programmability.
Availability
DGD2003S8-13 is available at Aetrix Electronics and suitable for battery-powered power tools, light electric vehicles, and industrial motor drives requiring stable component supply, automotive-grade traceability, and extended temperature operation.
Supply support for DGD2003S8-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and connectivity solutions for industrial, computing, and consumer markets.
The DGD2003 belongs to Diodes' high-voltage gate driver product line, engineered specifically for cost-sensitive, thermally constrained half-bridge motor control applications in portable and transportation equipment.
FAQ
What is the maximum allowable dVS/dt for the DGD2003S8-13?
The DGD2003S8-13 specifies a maximum dVS/dt rating of 50 V/ns at the VS pin. This limit ensures reliable operation of the high-side level shifter under fast-switching conditions. Exceeding this rate may cause false triggering or latch-up. Layout best practices-such as minimizing loop area between VS, VB, and HO, and using low-inductance bootstrap capacitors-must be followed to stay within this specification.
Can the DGD2003S8-13 drive P-channel high-side MOSFETs?
No. The DGD2003S8-13 is designed exclusively for N-channel MOSFETs in half-bridge topology. Its high-side driver is a floating source-follower configuration that requires the MOSFET source to be connected to VS. Driving a P-channel device would require inverted logic polarity, incompatible gate voltage referencing, and lacks the necessary high-side sink capability-none of which are supported by this IC's architecture.
Is an external bootstrap diode required for DGD2003S8-13 operation?
Yes. The DGD2003S8-13 does not integrate a bootstrap diode. An external ultrafast or Schottky diode (e.g., 1N4148WS or BAS21) must be placed between VCC and VB to charge the bootstrap capacitor during low-side conduction. Diode reverse recovery time and forward voltage directly impact minimum duty cycle and high-side drive stability-critical for continuous conduction mode in motor control.
Does the DGD2003S8-13 support 3.3V-only microcontroller interfaces without level shifting?
Yes. The HIN and LIN* inputs are fully compatible with 3.3V logic: VIH(min) = 2.5V and VIL(max) = 0.8V at VCC = 10–20V. With standard 3.3V CMOS outputs (typically 3.3V high, 0V low), the inputs meet threshold margins with >1.7V hysteresis due to Schmitt triggering-enabling direct connection to STM32, ESP32, or PIC microcontrollers without external level translators.
DGD2003S8-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- Half-Bridge
- Channel Type:
- Synchronous
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 10V ~ 20V
- Logic Voltage - VIL, VIH:
- 0.8V, 2.5V
- Current - Peak Output (Source, Sink):
- 290mA, 600mA
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- 200 V
- Rise / Fall Time (Typ):
- 70ns, 35ns
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO Type TH
DGD2003S8-13 FAQ
1.How can I place an order for DGD2003S8-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DGD2003S8-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DGD2003S8-13 reliable?
The price and inventory of DGD2003S8-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DGD2003S8-13 is usually 5 days.
3.What payment methods are accepted for DGD2003S8-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DGD2003S8-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DGD2003S8-13?
DGD2003S8-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DGD2003S8-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DGD2003S8-13?
For technical support, including DGD2003S8-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DGD2003S8-13 requirements.
6.How does Aetrix verify that DGD2003S8-13 is sourced from the original manufacturer or authorized distributors?
All DGD2003S8-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DGD2003S8-13 meets industry standards.
7.What is the process for return or replacement of DGD2003S8-13?
All DGD2003S8-13 units undergo pre-shipment inspection (PSI). If there is an issue with DGD2003S8-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DGD2003S8-13 part is unused and in its original packaging.
Return procedure for DGD2003S8-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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