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Diodes Incorporated DGD2005S8-13
- Part No.:
- DGD2005S8-13
- Manufacturer:
- Diodes Incorporated
- Category:
- Gate Drivers
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
DGD2005S8-13.pdf
- Description:
- IC GATE DRV HALF-BRIDGE 8SO 2.5K
- Quantity:
- Payment:
- Shipping:
Inventory:2,589
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Product details
Overview
DGD2005S8-13 from Diodes Incorporated is a high-speed dual-channel gate driver IC for N-channel MOSFET half-bridge topologies, featuring 290mA source / 600mA sink output capability, 30ns max propagation delay matching between high-side and low-side channels, and bootstrap-enabled high-side operation up to 200V. It operates across -40°C to +125°C and supports 10V–20V VCC and logic-compatible 3.3V inputs, targeting battery-powered power tools and light electric vehicle motor control.
For engineers reviewing the DGD2005S8-13 datasheet, DGD2005S8-13 pinout, DGD2005S8-13 application, or DGD2005S8-13 equivalent, key selection criteria include bootstrap high-side voltage rating (200V), delay matching tolerance (≤30ns), output current drive strength (290/600mA), undervoltage lockout thresholds (8.2V typical), and SO-8 thermal resistance (200°C/W).
Technical Context
The DGD2005 integrates independent high-side and low-side drivers with floating high-side architecture using bootstrap biasing, enabling VS-referenced operation up to 200V offset. Its Schmitt-triggered HIN/LIN inputs provide noise immunity, while internal UVLO independently monitors both VCC and VB/VS supplies.
Propagation delay matching (≤30ns) ensures precise timing alignment in high-frequency PWM control, and output stages are optimized to minimize cross-conduction risk during switching transitions. The device uses TTL/CMOS-compatible logic thresholds and supports 5V or 3.3V control interfaces without level-shifting.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VB Max | 224V absolute max - enables 200V bootstrap operation with 24V margin for transient spikes |
| tDM Max | 30ns - ensures matched turn-on/turn-off timing critical for clean half-bridge dead-time management |
| IO+/IO− | 290mA source / 600mA sink - drives large gate capacitance MOSFETs at high dV/dt without external buffers |
| VCC Range | 10V–20V - supports wide-input industrial and battery-supplied systems without regulation overhead |
| UVLO Thresholds | VCCUV− = 8.2V, VBSUV− = 8.2V - prevents erratic switching during brown-out conditions on either supply rail |
| TA Range | −40°C to +125°C - qualified for under-hood and portable power tool environments without derating |
Pinout & Package
Package: SO-8 (Standard), surface-mount, lead-free, RoHS-compliant, moisture sensitivity level 3.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 VCC | Low-side and logic supply input | Primary fixed 10–20V rail powering low-side driver, logic, and level-shift circuitry |
| 2 HIN | High-side logic input | In-phase TTL/CMOS signal controlling HO output; Schmitt-triggered for noise rejection |
| 3 LIN | Low-side logic input | In-phase TTL/CMOS signal controlling LO output; referenced to COM ground |
| 4 COM | Low-side return reference | Common ground node for low-side driver, logic, and LIN/HIN inputs |
| 5 LO | Low-side gate drive output | High-current output driving N-MOSFET source-connected to COM |
| 6 VS | High-side floating supply return | Reference node for high-side driver; tracks MOSFET source potential in bootstrap configuration |
| 7 HO | High-side gate drive output | High-current output driving N-MOSFET gate referenced to VS; tolerant to −0.3V transients |
| 8 VB | High-side floating supply input | Bootstrap capacitor charging node; supplies high-side driver when VS rises up to 200V above VB |
Key Features
| Feature | Design Value |
|---|---|
| Floating high-side driver | Supports bootstrap operation with VS up to 200V offset relative to VB - eliminates need for isolated supplies |
| Delay-matched outputs | ≤30ns propagation skew between HO and LO - enables <100kHz+ PWM frequencies with minimal shoot-through risk |
| Robust output stage | 290mA source / 600mA sink capability - reduces external gate resistor requirements and improves switching speed |
| Independent UVLO monitoring | Dual undervoltage lockout for VCC and VB/VS rails - prevents partial drive and MOSFET latch-up during supply faults |
| Logic-level compatibility | 3.3V-tolerant HIN/LIN inputs with internal pull-down - simplifies interface with microcontrollers and FPGAs |
Applications
| Battery-Powered Power Tools | Light Electric Vehicle Motor Control |
|---|---|
|
Use Scenario: Cordless drill/driver with 18–40V Li-ion battery pack and brushed or BLDC motor. IC Role / Device Role / Timing Role: Half-bridge gate driver controlling upper/lower N-MOSFETs in motor phase-leg; provides fast, matched switching for efficient PWM commutation. Use Value: 200V high-side rating accommodates battery voltage spikes during regenerative braking; 30ns delay match minimizes dead-time uncertainty and torque ripple. |
Use Scenario: 36–72V e-bike or e-scooter controller driving 3-phase BLDC motor via six half-bridge legs. IC Role / Device Role / Timing Role: Per-phase high-side/low-side driver delivering precise gate timing synchronized to MCU PWM signals. Use Value: 600mA sink current rapidly discharges MOSFET gates during turn-off, reducing conduction losses and thermal stress at 20–50kHz switching frequencies. |
| Industrial DC-AC Inverters | Home Appliance Motor Drives |
|
Use Scenario: 24–48V off-grid solar inverter converting battery DC to 120/230V AC using H-bridge topology. IC Role / Device Role / Timing Role: Dual-channel driver managing complementary high-side/low-side switches per leg; handles bidirectional current flow during inversion cycles. Use Value: −0.3V transient tolerance on HO/LO pins protects against Miller-induced negative spikes during fast dV/dt switching in transformerless designs. |
Use Scenario: Variable-speed compressor or fan motor in HVAC or refrigerator using sensorless BLDC control. IC Role / Device Role / Timing Role: Gate driver interfacing with 3.3V MCU outputs to energize motor windings via half-bridge configurations. Use Value: 3.3V logic compatibility eliminates level shifters; extended −40°C to +125°C range ensures reliability inside sealed appliance enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-side/low-side gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRS2005PBF | Higher 600V high-side rating; slower 60ns delay match; requires external bootstrap diode | Better suited for 100–400V industrial inverters; less optimal for compact 20–60V battery systems | Choose for higher-voltage isolation needs where timing precision is secondary to voltage headroom |
| LM5109BMAX/NOPB | Integrated bootstrap diode; 100V high-side limit; 25ns delay match; lower 1.5A peak output | Optimized for 12–48V automotive body electronics; not rated for 200V transients | Prefer when board space is constrained and integrated diode simplifies layout, but only below 100V operating range |
Compared with IRS2005PBF and LM5109BMAX/NOPB, the DGD2005S8-13 delivers superior timing precision (30ns vs. 60ns/25ns) and targeted 200V robustness for mid-voltage battery systems-balancing performance, integration, and thermal efficiency without over-specifying voltage rating.
Availability
DGD2005S8-13 is available at Aetrix Electronics and suitable for battery-powered power tools, light electric vehicle motor controllers, and industrial DC-AC inverters requiring stable component supply, consistent SO-8 sourcing, and extended temperature operation.
Supply support for DGD2005S8-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.
The DGD2005 belongs to Diodes' high-speed gate driver product line, engineered specifically for efficient, reliable half-bridge control in portable and medium-voltage motor drive applications.
FAQ
Can DGD2005S8-13 drive P-channel high-side MOSFETs?
No. The DGD2005S8-13 is designed exclusively for N-channel MOSFETs in half-bridge configurations. Its high-side driver uses bootstrap biasing, which requires the high-side switch to be N-channel with source tied to VS. Driving P-channel devices would require inverted logic and different level-shifting architecture not supported by this IC.
What is the minimum bootstrap capacitor value recommended for 200V operation?
For reliable 200V high-side operation at 20kHz PWM, Diodes recommends ≥0.1µF ceramic capacitor with X7R dielectric and 25V+ rating. Capacitor ESR must be ≤100mΩ to maintain VB stability during high-current gate charging; layout should minimize loop inductance between VB, VS, and capacitor pads.
Does DGD2005S8-13 include built-in shoot-through protection?
No. The DGD2005S8-13 does not integrate hardware-based shoot-through prevention. Safe operation requires external dead-time insertion via MCU PWM peripherals or external logic. Its matched propagation delays (≤30ns) reduce timing uncertainty, but system-level dead-time must still be enforced to prevent simultaneous HO/LO conduction.
Is DGD2005S8-13 qualified for automotive AEC-Q100 applications?
No. The DGD2005S8-13 is not AEC-Q100 qualified. Diodes offers automotive-grade variants (e.g., DGD2005Q) with PPAP documentation, IATF 16949 manufacturing, and extended qualification testing. Standard DGD2005S8-13 is intended for industrial, consumer, and commercial applications only.
DGD2005S8-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- Half-Bridge
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 10V ~ 20V
- Logic Voltage - VIL, VIH:
- 0.6V, 2.5V
- Current - Peak Output (Source, Sink):
- 290mA, 600mA
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- 200 V
- Rise / Fall Time (Typ):
- 100ns, 35ns
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
DGD2005S8-13 FAQ
1.How can I place an order for DGD2005S8-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DGD2005S8-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DGD2005S8-13 reliable?
The price and inventory of DGD2005S8-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DGD2005S8-13 is usually 5 days.
3.What payment methods are accepted for DGD2005S8-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DGD2005S8-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DGD2005S8-13?
DGD2005S8-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DGD2005S8-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DGD2005S8-13?
For technical support, including DGD2005S8-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DGD2005S8-13 requirements.
6.How does Aetrix verify that DGD2005S8-13 is sourced from the original manufacturer or authorized distributors?
All DGD2005S8-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DGD2005S8-13 meets industry standards.
7.What is the process for return or replacement of DGD2005S8-13?
All DGD2005S8-13 units undergo pre-shipment inspection (PSI). If there is an issue with DGD2005S8-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DGD2005S8-13 part is unused and in its original packaging.
Return procedure for DGD2005S8-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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