Diodes Incorporated DGD2012S8-13

Overview

DGD2012S8-13 from Diodes Incorporated is a high-speed, mid-voltage half-bridge gate driver IC for N-channel MOSFETs in SO-8 package. It integrates independent high-side (200V bootstrap) and low-side drivers with 1.9A source / 2.3A sink output capability, TTL/CMOS-compatible 3.3V logic inputs, and undervoltage lockout on both sides-used in battery-powered power tools and light electric vehicle inverters.

For engineers reviewing the DGD2012S8-13 datasheet, DGD2012S8-13 pinout, DGD2012S8-13 application, or DGD2012S8-13 equivalent, key selection criteria include bootstrap high-side voltage rating (200V), propagation delay matching (≤35 ns), output current asymmetry (1.9A/2.3A), -40°C to +125°C operating range, and SO-8 thermal resistance (200°C/W).

Technical Context

The DGD2012S8-13 implements dual independent gate drivers: a floating high-side channel referenced to VS with bootstrap supply tolerance up to 200V, and a grounded low-side channel supplied by VCC (10–20V). Its Schmitt-triggered HIN/LIN inputs provide noise immunity and internal pull-downs ensure defined states during control loss.

It features separate undervoltage lockout thresholds for VB/VCC (8.0–9.8V positive-going), fast propagation delays (180–330 ns), tight delay matching (≤35 ns), and robust transient tolerance-including negative transients on outputs and dVS/dt immunity up to 50 V/ns-enabling reliable half-bridge switching in noisy motor drive environments.

Key Specifications

Pinout & Package

Package: SO-8 (Type TH), surface-mount, lead-free, RoHS-compliant, moisture sensitivity level 3 per J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge gate driver applications.

Compared with DGD2012S8-13, DGD2181M offers faster switching and lower supply current while maintaining pin compatibility, whereas IRS2004STRPBF provides symmetrical drive and hardware dead-time but demands additional external components and 5V logic.

Availability

DGD2012S8-13 is available at Aetrix Electronics and suitable for battery-powered power tools, light electric vehicle motor controllers, and industrial DC motor drives requiring stable component supply despite its obsolete status-inventory is managed for legacy design support and end-of-life transition planning.

Supply support for DGD2012S8-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and connectivity solutions for industrial, computing, and consumer markets.

The DGD series targets cost-sensitive, thermally constrained motor control applications-designed for robust half-bridge gate driving in battery-operated equipment with extended temperature and transient resilience requirements.

FAQ

Is DGD2012S8-13 still in active production?

No-DGD2012S8-13 is officially obsolete and discontinued by Diodes Incorporated as of July 2021. The recommended replacement is DGD2181M, which shares the SO-8 package and pinout while improving propagation delay and quiescent current. Aetrix Electronics maintains limited legacy stock for ongoing production support and last-time buys.

Can DGD2012S8-13 drive P-channel high-side MOSFETs?

No-it is specifically designed for N-channel MOSFETs in both high-side (bootstrap) and low-side positions. Its high-side driver architecture relies on floating bootstrap supply referenced to VS and cannot interface with P-MOSFET gate requirements (negative VGS relative to source). Use only with N-MOSFET half-bridge configurations.

What is the maximum allowable dVS/dt at the VS pin?

The absolute maximum dVS/dt rating is 50 V/ns, verified per the datasheet's Absolute Maximum Ratings table. Exceeding this may cause false triggering or latch-up in the high-side level shifter. Layout best practices-short traces, local decoupling, and minimized loop area-are essential to maintain reliability at high switching speeds.

Does DGD2012S8-13 include built-in dead-time generation?

No-it provides independent, non-overlapping HO and LO outputs but does not generate dead-time internally. Dead-time must be implemented externally via MCU firmware, dedicated timing ICs, or gate-resistor networks. The ≤35 ns delay matching between channels simplifies external dead-time insertion by ensuring consistent propagation skew across temperature and supply.