Diodes Incorporated DGD2101MS8-13

Overview

DGD2101MS8-13 from Diodes Incorporated is a high-side/low-side gate driver IC designed to drive two N-channel MOSFETs or IGBTs in half-bridge configurations. It supports 600V high-side bootstrap operation, delivers ≤50ns propagation delay matching between channels, and operates with 10V–20V VCC and logic inputs compatible down to 3.3V TTL/CMOS levels. It is used in high-frequency DC-DC converters and motor control inverters.

For engineers reviewing the DGD2101MS8-13 datasheet, DGD2101MS8-13 pinout, DGD2101MS8-13 application, or DGD2101MS8-13 equivalent, key selection criteria include high-side floating voltage capability (VS up to 600V), matched propagation delay (≤50ns), undervoltage lockout thresholds (VCCUV+ = 8.0–9.8V), thermal resistance (RθJA = 200°C/W), and SO-8 package compatibility with industrial temperature range (−40°C to +125°C).

Technical Context

The DGD2101MS8-13 integrates independent high-side and low-side drivers with isolated level-shifting for bootstrap-based high-side operation up to 600V. Its Schmitt-triggered HIN/LIN inputs provide noise immunity, and internal UVLO protects both VCC and VB/VS domains.

Propagation delay matching (≤50ns) enables precise dead-time control in synchronous switching topologies. The device uses separate ground references-COM for low-side/logic and VS for high-side-requiring careful PCB layout to minimize coupling and ensure robust shoot-through prevention.

Key Specifications

Pinout & Package

Package: SO-8 (Type TH), surface-mount, lead-free, RoHS-compliant, moisture sensitivity level 3 per J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side/low-side gate driver applications.

Compared with IR2101S and LM5109BMAX, the DGD2101MS8-13 uniquely combines 600V high-side capability, ≤50ns delay matching, and −40°C to +125°C operation-making it optimal for high-reliability industrial and automotive-grade half-bridge power stages where voltage margin and timing precision are critical.

Availability

DGD2101MS8-13 is available at Aetrix Electronics and suitable for DC-DC converters, motor controls, and AC-DC power supplies requiring stable component supply and extended temperature performance.

Supply support for DGD2101MS8-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

The DGD2101M belongs to Diodes' high-voltage gate driver product line, engineered specifically for robust half-bridge control in industrial power conversion, motor drives, and renewable energy systems.

FAQ

What is the maximum allowable dVS/dt for reliable high-side operation?

The DGD2101MS8-13 is rated for 50 V/ns dVS/dt on the VS node, verified per datasheet Absolute Maximum Ratings. This specification ensures stable level-shifting and prevents false triggering during fast-switching events in hard-switched topologies like PFC and inverters.

Can HIN and LIN be driven independently for non-complementary operation?

Yes-HIN and LIN are fully independent logic inputs with individual Schmitt triggers and internal pull-downs. They support non-complementary drive schemes such as three-state control, phase-shifted PWM, or dynamic dead-time adjustment without risk of shoot-through due to internal interlock logic.

Is an external bootstrap diode required when using VB in standard configuration?

No external diode is required-the DGD2101MS8-13 integrates internal bootstrap diode functionality. However, an external 0.1–1µF ceramic capacitor must be placed between VB and VS, and the bootstrap circuit must be sized to sustain charge during minimum duty-cycle operation at maximum switching frequency.

Does the device include built-in protection against shoot-through?

The DGD2101MS8-13 does not include active shoot-through prevention logic. Instead, it relies on matched propagation delays (≤50ns) and clean input edges to enable precise external dead-time control. Designers must implement dead-time externally via controller or gate-resistor tuning to avoid simultaneous conduction.