Diodes Incorporated DGD2101S8-13

Overview

DGD2101S8-13 from Diodes Incorporated is a high-voltage, high-speed dual-channel gate driver IC for N-channel MOSFETs and IGBTs in half-bridge configurations. It supports 600V high-side bootstrap operation, delivers ≤50ns propagation delay matching between channels, and operates with 10V–20V VCC and TTL/CMOS-compatible logic inputs down to 3.3V. It is used in DC-DC converters, motor controls, and Class D amplifiers requiring precise timing and robust isolation.

For engineers reviewing the DGD2101S8-13 datasheet, DGD2101S8-13 pinout, DGD2101S8-13 application, or DGD2101S8-13 equivalent, key selection criteria include high-side floating voltage capability (600V), propagation delay matching (≤50ns), SO-8 thermal resistance (RθJA = 200°C/W), undervoltage lockout thresholds (VCCUV+ = 8.0–9.8V), and negative transient tolerance on outputs.

Technical Context

The DGD2101S8-13 integrates independent high-side and low-side drivers with isolated floating supply paths: VB/VS define the high-side domain, while VCC/COM ground the logic and low-side output. Its Schmitt-triggered HIN/LIN inputs provide noise immunity, and internal UVLO prevents operation below safe VCC levels.

It uses charge-pump-assisted bootstrap operation for high-side drive, enabling continuous switching at VS up to 600V relative to COM. The matched propagation delays (tON/tOFF ≤220ns, tDM ≤50ns) and fast edge rates (tR ≤170ns, tF ≤90ns) support >100kHz PWM frequencies in hard-switching topologies.

Key Specifications

Pinout & Package

Package: SO-8 (Type TH), surface-mount, lead-free, RoHS-compliant, moisture sensitivity level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side/low-side gate driver applications.

Compared with IRS21844SPbF and UCC27211D, the DGD2101S8-13 uniquely balances 600V high-side capability, SO-8 compactness, and negative transient resilience - making it optimal for space-constrained, medium-voltage industrial inverters where reliability under electrical stress is critical.

Availability

DGD2101S8-13 is available at Aetrix Electronics and suitable for DC-DC converters, motor controls, and Class D power amplifiers requiring stable component supply across extended temperature ranges and high-voltage operation.

Supply support for DGD2101S8-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.

The DGD2101S8-13 belongs to Diodes' high-voltage gate driver product line, engineered specifically for robust half-bridge control in power conversion systems operating up to 600V with minimal external components.

FAQ

What is the maximum allowable dVS/dt for the DGD2101S8-13?

The DGD2101S8-13 specifies a maximum dVS/dt rating of 50 V/ns. This limit ensures reliable operation of the internal level-shifting circuitry during fast high-side switching transitions. Exceeding this rate may cause false triggering or latch-up. Layout practices - including minimized loop area between VS, HO, and bootstrap capacitor - are critical to maintain compliance in real-world PCB implementations.

Can the DGD2101S8-13 drive IGBTs directly?

Yes - the DGD2101S8-13 is explicitly rated to drive both N-channel MOSFETs and IGBTs. Its high pulse output currents (HO: +290mA, LO: −600mA) and 600V high-side capability meet typical IGBT gate drive requirements. However, gate resistor selection must account for IGBT gate charge and desired switching speed to avoid excessive power dissipation in the driver outputs.

Is an external bootstrap diode required?

Yes - the DGD2101S8-13 does not integrate a bootstrap diode. An external ultrafast or Schottky diode (e.g., 1N4148W or BAS21) must be placed between VB and the bootstrap capacitor's positive terminal to recharge the capacitor during low-side conduction. Diode reverse recovery time and forward voltage directly impact high-side drive stability at high duty cycles.

Does the DGD2101S8-13 support independent enable/disable control for each channel?

No - the DGD2101S8-13 has no dedicated enable pins. Channel control is solely via HIN and LIN logic inputs. Both outputs are active when their respective inputs are asserted; cross-conduction is prevented by external dead-time insertion in the controller. The device lacks internal interlock or shutdown logic - system-level timing control remains the responsibility of the upstream PWM generator.