Diodes Incorporated DGD21032S8-13

Overview

DGD21032S8-13 from Diodes Incorporated is a high-voltage half-bridge gate driver IC designed to control two N-channel MOSFETs or IGBTs in high-side/low-side configurations. It supports bootstrap operation up to 600V, delivers 290mA source / 600mA sink output current, features a fixed 430ns internal deadtime, and operates across –40°C to +125°C - enabling use in industrial DC-DC converters and motor control inverters.

For engineers reviewing the DGD21032S8-13 datasheet, DGD21032S8-13 pinout, DGD21032S8-13 application, or DGD21032S8-13 equivalent, key selection criteria include high-side floating supply tolerance (VB up to +624V), TTL/CMOS-compatible 3.3V logic inputs, SO-8 (Type TH) package thermal performance (RθJA = 200°C/W), and undervoltage lockout thresholds for both VCC and VB supplies.

Technical Context

The DGD21032S8-13 integrates independent high-side and low-side drivers with Schmitt-triggered logic inputs (HIN, LIN*), internal deadtime generation (430ns typ), and separate undervoltage lockout circuits for VCC (7.4–9.6V trip) and VB/VS (5.5–7.5V trip). Its high-side driver floats relative to VS and tolerates dVS/dt up to 50V/ns.

It uses bipolar-CMOS-DMOS process technology to achieve 600V high-side capability in bootstrap mode, with output stages optimized for fast switching (tON = 680ns typ at VS = 0V; tOFF = 150ns typ at VS = 600V) and cross-conduction prevention via matched propagation delays (tDM ≤ 60ns).

Key Specifications

Pinout & Package

Package: SO-8 (Type TH), surface-mount, lead-free, RoHS-compliant, moisture sensitivity level 3 per J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge gate driver applications.

Compared with IR2103S and UCC27201A, the DGD21032S8-13 offers a balanced integration point: built-in 430ns deadtime and 50V/ns dVS/dt tolerance reduce system-level timing design effort, while its 290mA/600mA drive meets most 1–3kW half-bridge requirements without external boost stages.

Availability

DGD21032S8-13 is available at Aetrix Electronics and suitable for DC-DC converters, motor control inverters, and AC-DC power supplies requiring stable component supply, extended temperature operation, and high-voltage gate drive reliability.

Supply support for DGD21032S8-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.

The DGD21032 belongs to Diodes' high-voltage gate driver product line, engineered specifically for robust half-bridge control in energy-efficient power conversion systems operating up to 600V with minimal external components.

FAQ

What is the minimum recommended bootstrap capacitor value for DGD21032S8-13 in a 100kHz half-bridge application?

For 100kHz operation with 20% duty cycle and 15V VB supply, a 0.1µF X7R ceramic capacitor is recommended. This ensures <5% voltage droop across the switching period given the device's 60µA typical quiescent VBS current and 290mA peak gate charge demand for a 1.5nF MOSFET gate.

Can DGD21032S8-13 drive IGBTs directly without external gate resistors?

No - external gate resistors are required. The DGD21032S8-13's 290mA source/600mA sink capability supports fast IGBT turn-on/off, but series gate resistors (typically 5–22Ω) must be used to control di/dt, suppress ringing, and limit peak current during Miller plateau crossing.

Does the DGD21032S8-13 support 3.3V-only microcontroller interfaces without level shifters?

Yes - HIN and LIN* inputs are fully compatible with 3.3V CMOS logic: VIH(min) = 2.5V at VCC = 10V, and VIL(max) = 0.8V across the full 10–20V VCC range. No level shifting is needed when interfacing with 3.3V MCUs such as STM32G4 or C2000 F28004x families.

How does the internal deadtime of 430ns affect minimum achievable PWM frequency in a synchronous buck converter?

A 430ns deadtime imposes no practical lower limit on PWM frequency, but constrains maximum duty cycle resolution at high frequencies. At 2MHz, it consumes ~0.086% of the period - negligible for most designs. However, at 10MHz, it occupies 0.43%, limiting usable duty cycle range to ~99.57% maximum.