Diodes Incorporated DGD2103MS8-13
- Part No.:
- DGD2103MS8-13
- Manufacturer:
- Diodes Incorporated
- Category:
- Gate Drivers
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
DGD2103MS8-13.pdf
- Description:
- IC GATE DRVR HALF-BRIDGE 8SO
- Quantity:
- Payment:

- Shipping:

Inventory:12,262
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Product details
Overview
DGD2103MS8-13 from Diodes Incorporated is a high-voltage half-bridge gate driver IC designed to control two N-channel MOSFETs or IGBTs in bootstrap-based high-side switching configurations. It supports 600V high-side floating operation, delivers 290mA source / 600mA sink peak output current, and features a fixed 420ns internal deadtime. It operates across –40°C to +125°C and interfaces with 3.3V–5V TTL/CMOS logic in DC-DC converters and motor control inverters.
For engineers reviewing the DGD2103MS8-13 datasheet, DGD2103MS8-13 pinout, DGD2103MS8-13 application, or DGD2103MS8-13 equivalent, key selection criteria include high-side voltage capability (600V), bootstrap-compatible floating architecture, 420ns deadtime enforcement, SO-8 thermal performance (RθJA = 200°C/W), and undervoltage lockout thresholds for VCC (8.9V typ) and VB (5.5V typ).
Technical Context
The DGD2103MS8-13 implements independent high-side and low-side drivers with Schmitt-triggered HIN/LIN* inputs, enabling noise-immune digital control in electrically harsh motor drive environments. Its internal level-shifting circuitry sustains VS-to-VB offset up to 600V while maintaining logic compatibility down to 3.3V.
It integrates dual undervoltage lockout (UVLO) circuits - one for VCC (8.9V turn-on threshold) and one for VB (5.5V turn-on threshold) - ensuring safe startup and fault recovery. The fixed 420ns deadtime prevents shoot-through by enforcing minimum non-overlap between HO and LO transitions under all operating conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| High-Side Voltage Rating | 600V max VB–VS offset - enables direct use in 400V DC bus motor drives and PFC stages without external level shifters. |
| Output Drive Strength | 290mA source / 600mA sink - sufficient to rapidly charge/discharge ≥1nF gate capacitance at ≤100ns transition times. |
| Internal Dead Time | 420ns typical - hard-coded timing guardband preventing simultaneous HO/LO conduction in half-bridge topologies. |
| VCC Operating Range | 10V to 20V - supports wide-input industrial power rails and avoids external LDO dependency for low-side supply. |
| Logic Input Compatibility | 3.3V–5V TTL/CMOS - allows direct interface with microcontrollers, DSPs, and FPGA I/O without level translation. |
| Operating Temperature | –40°C to +125°C - qualified for under-hood automotive subsystems and industrial motor controllers without derating. |
| UVLO Thresholds | VCCUV+ = 8.9V, VBSUV+ = 5.5V - ensures gate drive remains disabled until both supplies stabilize above safe turn-on margins. |
Pinout & Package
Supplied in standard SO-8 (Small Outline-8) package with matte tin-plated leads, 1.27mm pitch, and JEDEC MS-012AC compliant outline. Thermal resistance is 200°C/W on 2-layer FR-4 board.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 VCC | Logic and low-side supply input | Primary power rail for internal logic, level shifter, and low-side driver; must be decoupled locally. |
| 2 HIN | High-side logic input | In-phase control signal for HO output; Schmitt-triggered for noise immunity in motor EMI environments. |
| 3 LIN* | Low-side logic input (active-low) | Inverted control for LO output; * denotes active-low polarity to prevent accidental simultaneous drive. |
| 4 COM | Low-side return and logic ground | Common reference for VCC, LIN*, and LO; must be low-inductance connection to PCB ground plane. |
| 5 LO | Low-side gate drive output | Direct drive output referenced to COM; capable of 600mA sink for fast MOSFET turn-off. |
| 6 VS | High-side floating supply return | Bootstrap capacitor negative terminal; tracks switching node potential during high-side conduction. |
| 7 HO | High-side gate drive output | Floating output referenced to VS; drives gate of high-side N-MOSFET with 290mA source capability. |
| 8 VB | High-side floating supply input | Bootstrap capacitor positive terminal; supplies gate drive energy when high-side is conducting. |
Key Features
| Feature | Design Value |
|---|---|
| Floating high-side driver | Supports 600V VB–VS differential - eliminates need for isolated supplies in half-bridge motor drives. |
| Fixed internal deadtime | 420ns guaranteed minimum - removes external timing component dependency and simplifies layout. |
| Schmitt-triggered inputs | Hysteresis >1.2V on HIN/LIN* - rejects <50ns EMI transients common in inverter switching nodes. |
| Independent UVLO circuits | VCCUV+ = 8.9V, VBSUV+ = 5.5V - prevents partial drive during brown-out, avoiding MOSFET linear-mode stress. |
| Negative transient tolerance | LO and HO outputs withstand –5V undershoot - accommodates ground bounce in high-dI/dt motor phases. |
Applications
| Brushless DC Motor Control | Industrial DC-DC Converters |
|---|---|
|
Use Scenario: Driving three-phase inverter legs in HVAC blowers and pump controllers using N-channel MOSFETs. IC Role / Device Role / Timing Role: Half-bridge gate driver providing synchronized, deadtime-enforced HO/LO signals to upper/lower FETs per phase. Use Value: 420ns fixed deadtime prevents shoot-through during 20kHz PWM commutation, reducing MOSFET failure risk in thermally constrained enclosures. |
Use Scenario: Secondary-side synchronous rectification in isolated 48V–12V telecom DC-DC modules. IC Role / Device Role / Timing Role: High-side gate driver enabling efficient N-MOSFET use on transformer secondary with bootstrap biasing. Use Value: 600V high-side rating supports flyback and forward converter topologies with reflected voltage spikes up to 550V. |
| Class D Audio Amplifiers | AC-DC Power Supplies |
|
Use Scenario: Full-bridge output stage in 100W audio amplifiers requiring low-distortion, high-efficiency switching. IC Role / Device Role / Timing Role: Dual gate driver delivering matched tON/tOFF (≤60ns skew) to minimize crossover distortion. Use Value: 70ns typical rise time and 35ns fall time ensure <1% THD+N at 20kHz with minimal gate drive loss. |
Use Scenario: Active clamp forward or LLC resonant converter primary-side half-bridge in server PSUs. IC Role / Device Role / Timing Role: Bootstrap-configured gate driver managing high-side FET switching at 300kHz with tight timing control. Use Value: 290mA source current reduces HO gate charge time to <30ns for 1.5nF gate capacitance, improving light-load efficiency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar half-bridge gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IR2103S | Lower 600V rating but no integrated UVLO on VB; 500ns deadtime; SO-8 package. | Lacks VBS UVLO - requires external monitoring for bootstrap capacitor health in long-duty-cycle applications. | Prefer DGD2103MS8-13 where robust bootstrap supervision is required in intermittent motor loads. |
| LM5109BMAX | Higher 100V VCC rating; 1A sink current; no fixed deadtime - requires external RC timing network. | Needs external deadtime circuitry - increases BOM count and layout sensitivity to noise-induced timing jitter. | Prefer DGD2103MS8-13 for simplified design in cost-sensitive, space-constrained motor inverters. |
Compared with IR2103S and LM5109BMAX, the DGD2103MS8-13 provides tighter integration (dual UVLO, fixed deadtime), higher noise immunity (Schmitt inputs), and verified 600V operation - reducing validation effort in industrial motor control designs.
Availability
DGD2103MS8-13 is available at Aetrix Electronics and suitable for DC-DC converters, motor controls, and AC-DC power supplies requiring stable component supply, extended temperature support, and bootstrap-compatible high-side drive capability.
Supply support for DGD2103MS8-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.
The DGD2103MS8-13 belongs to Diodes' high-voltage gate driver product line, engineered specifically for reliable half-bridge switching in noisy, high-dV/dt motor and power conversion systems.
FAQ
What is the maximum allowable dVS/dt for the DGD2103MS8-13?
The DGD2103MS8-13 specifies a maximum dVS/dt rating of 50 V/ns. This limit ensures reliable level-shifting operation during rapid high-side switching transitions. Exceeding this rate may cause false triggering or latch-up in the floating channel. Layout practices - including minimized VS loop inductance and local ceramic decoupling at VB/VS - are critical to maintain compliance in 400V bus applications.
Can the DGD2103MS8-13 drive IGBTs directly?
Yes - the DGD2103MS8-13 is explicitly rated for IGBT drive with its 600mA sink and 290mA source capability, supporting gate charge requirements of up to 150nC at 15V VGE. Its 420ns deadtime and negative transient tolerance align with IGBT safe operating area constraints, making it suitable for 1200V-class IGBT half-bridges in induction heating and UPS systems.
Is an external bootstrap diode required?
Yes - the DGD2103MS8-13 requires an external fast-recovery bootstrap diode (e.g., 1N4148WS or equivalent) between VCC and VB. The internal circuitry does not integrate a diode; omission causes insufficient VB recharge during high-duty-cycle operation, leading to HO output collapse and potential shoot-through.
Does the DGD2103MS8-13 support 3.3V-only microcontroller interfaces?
Yes - the HIN and LIN* inputs accept logic-high signals as low as 2.5V (VIH min) and logic-low signals up to 0.8V (VIL max) across the full VCC range (10–20V), enabling direct connection to 3.3V GPIOs without level shifters. Schmitt-triggering further ensures clean edge detection despite slow-rising MCU outputs.
DGD2103MS8-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- Half-Bridge
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- IGBT, N-Channel MOSFET
- Voltage - Supply:
- 10V ~ 20V
- Logic Voltage - VIL, VIH:
- 0.8V, 2.5V
- Current - Peak Output (Source, Sink):
- 290mA, 600mA
- Input Type:
- Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap):
- 600 V
- Rise / Fall Time (Typ):
- 70ns, 35ns
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
DGD2103MS8-13 FAQ
1.How can I place an order for DGD2103MS8-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DGD2103MS8-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DGD2103MS8-13 reliable?
The price and inventory of DGD2103MS8-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DGD2103MS8-13 is usually 5 days.
3.What payment methods are accepted for DGD2103MS8-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DGD2103MS8-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DGD2103MS8-13?
DGD2103MS8-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DGD2103MS8-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DGD2103MS8-13?
For technical support, including DGD2103MS8-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DGD2103MS8-13 requirements.
6.How does Aetrix verify that DGD2103MS8-13 is sourced from the original manufacturer or authorized distributors?
All DGD2103MS8-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DGD2103MS8-13 meets industry standards.
7.What is the process for return or replacement of DGD2103MS8-13?
All DGD2103MS8-13 units undergo pre-shipment inspection (PSI). If there is an issue with DGD2103MS8-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DGD2103MS8-13 part is unused and in its original packaging.
Return procedure for DGD2103MS8-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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