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Diodes Incorporated DGD2104S8-13
- Part No.:
- DGD2104S8-13
- Manufacturer:
- Diodes Incorporated
- Category:
- Gate Drivers
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
DGD2104S8-13.pdf
- Description:
- IC GATE DRVR HALF-BRIDGE 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:415
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Product details
Overview
DGD2104S8-13 from Diodes Incorporated is a high-voltage half-bridge gate driver IC designed to control two N-channel MOSFETs or IGBTs in bootstrap-based high-side switching configurations. It supports 600V high-side floating operation, delivers 290mA source / 600mA sink peak output current, features a fixed 520ns internal deadtime, and operates across –40°C to +125°C in SO-8 (Type TH) package - deployed in DC-DC converters and motor control inverters.
For engineers reviewing the DGD2104S8-13 datasheet, DGD2104S8-13 pinout, DGD2104S8-13 application, or DGD2104S8-13 equivalent, key selection criteria include bootstrap-compatible high-side voltage rating (600V), TTL/CMOS logic compatibility down to 3.3V, negative transient-tolerant outputs, undervoltage lockout on VCC, and SO-8 thermal performance under industrial ambient conditions.
Technical Context
The DGD2104S8-13 integrates independent high-side and low-side drivers with matched propagation delays (tON ≤ 820ns, tOFF ≤ 220ns) and tight delay matching (≤60ns) to minimize shoot-through risk. Its internal deadtime of 520ns (typical) is fixed and non-adjustable, enforced between HO and LO transitions regardless of input timing.
Logic inputs (IN and SD*) use Schmitt-triggered thresholds (VIH ≥ 2.5V, VIL ≤ 0.8V at VCC = 10–20V), and both outputs tolerate negative transients at COM and VS nodes. The high-side driver operates with VB referenced to VS, enabling bootstrap supply operation up to 600V offset while maintaining dVS/dt immunity up to 50V/ns.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| High-Side Voltage Rating | 600V max VB–VS offset - enables direct use in 400V DC bus motor drives and PFC stages without external level-shifting. |
| Output Drive Strength | 290mA source / 600mA sink - sufficient to rapidly charge/discharge 1nF gate capacitance in <100ns for 60kHz+ switching. |
| Internal Deadtime | 520ns typical - hardwired protection against cross-conduction in half-bridge topologies without external timing components. |
| Logic Input Compatibility | 3.3V–5V TTL/CMOS - interfaces directly with microcontrollers, DSPs, and FPGA GPIO without level-shifting circuitry. |
| Operating Temperature Range | –40°C to +125°C - validated for under-hood automotive power modules and industrial AC-DC supplies with convection cooling. |
| VCC Supply Range | 10V to 20V - supports wide-input auxiliary supplies and eliminates need for precision LDO regulation. |
| UVLO Threshold | VCCUV+ = 8.9V (typ), VCCUV– = 8.2V (typ) - prevents erratic switching during brown-out conditions in unregulated 12V rails. |
Pinout & Package
Package: SO-8 (Type TH), surface-mount, lead-free, RoHS-compliant, moisture sensitivity level 3 per J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 VCC | Low-side and logic supply input | Provides power for internal logic, level shifter, and low-side driver; must be decoupled near pin with ≥1µF ceramic capacitor. |
| 2 IN | Phase control input | In-phase logic signal controlling both HO and LO outputs; Schmitt-triggered for noise immunity in noisy power environments. |
| 3 SD* | Active-low shutdown input | Pulls both outputs low when asserted; open-drain compatible with 3.3V/5V controllers; requires pull-up for normal operation. |
| 4 COM | Low-side return and logic ground | Common reference for VCC, IN, SD*, and LO; must be connected to low-side source node with minimal impedance path. |
| 5 LO | Low-side gate drive output | Drives N-MOSFET/IGBT gate referenced to COM; rated for 600mA sink ensures fast turn-off of high-Ciss devices. |
| 6 VS | High-side floating supply return | Reference node for high-side driver; tracks switching node voltage; critical for bootstrap capacitor placement and layout. |
| 7 HO | High-side gate drive output | Drives high-side N-MOSFET/IGBT gate referenced to VS; 290mA source capability supports gate charge delivery up to Qg = 25nC @ 60kHz. |
| 8 VB | High-side floating supply input | Connects to bootstrap capacitor top plate; withstands 624V absolute max - defines maximum bridge voltage rating. |
Key Features
| Feature | Design Value |
|---|---|
| Floating high-side driver | Enables 600V bootstrap operation without external level shifters or isolated supplies - reduces BOM count in half-bridge inverters. |
| Negative transient tolerance | Outputs withstand –5V undershoot at COM/VS - maintains reliability during high-dI/dt switching in motor phase-leg layouts. |
| Fixed internal deadtime | 520ns prevents simultaneous conduction without requiring external timing resistors or digital delay blocks - simplifies PCB routing. |
| Undervoltage lockout (VCC) | 8.9V rising threshold ensures stable logic and driver bias before enabling outputs - avoids partial turn-on failures during power-up. |
| Schmitt-triggered inputs | Hysteresis >1.7V (VIH–VIL) rejects EMI-induced glitches on IN/SD* lines in high-noise power converter environments. |
Applications
| DC-DC Converters | Motor Controls |
|---|---|
|
Use Scenario: Isolated or non-isolated synchronous buck/boost converters operating at 100kHz–500kHz with 400V input rails. IC Role / Device Role / Timing Role: Half-bridge gate driver coordinating high-side and low-side N-MOSFETs with fixed deadtime to prevent shoot-through during PWM transitions. Use Value: 600V high-side rating allows direct use with 380V DC-link capacitors; 290mA/600mA drive strength enables <100ns gate transitions for SiC MOSFETs up to 10A. |
Use Scenario: Three-phase BLDC or PMSM inverter stages in HVAC compressors and industrial servo drives. IC Role / Device Role / Timing Role: High-voltage gate driver stage translating MCU PWM signals into robust gate waveforms for 600V-class IGBTs/MOSFETs. Use Value: –40°C to +125°C operation supports sealed motor controller enclosures; SO-8 thermal resistance (200°C/W) enables 0.625W dissipation without heatsink at TA = 85°C. |
| AC-DC Power Supplies | Class D Power Amplifiers |
|
Use Scenario: Active clamp forward or LLC resonant converters in telecom rectifiers and server PSUs. IC Role / Device Role / Timing Role: Gate driver for primary-side high-side switch and synchronous rectifier control in secondary-side half-bridges. Use Value: 3.3V logic compatibility enables direct interface with digital PWM controllers (e.g., UCD3138); UVLO prevents startup instability during bulk capacitor charging. |
Use Scenario: High-efficiency audio amplifiers delivering >100W into 4Ω loads with switching frequencies above 300kHz. IC Role / Device Role / Timing Role: Output stage driver converting PWM audio signals into high-current gate drive for paralleled MOSFETs. Use Value: 70ns rise time and 35ns fall time minimize switching losses; negative transient tolerance protects against inductive kickback from speaker loads. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar half-bridge gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRS21844STRPBF | Higher 650V VB rating; adjustable deadtime via external resistor; 2.5A peak output; requires separate bootstrap diode. | Preferred for higher-reliability industrial inverters needing programmable deadtime and higher drive current. | Select when design requires >600V margin or dynamic deadtime tuning; adds BOM cost and layout complexity. |
| LM5109BMAX/NOPB | 400V max VB; 1A source/sink; no internal UVLO on VBS; 20ns faster propagation delay; SO-8 package. | Suitable for lower-voltage DC-DC converters (<300V bus) where speed outweighs high-voltage robustness. | Choose for cost-sensitive 24V–100V systems prioritizing propagation delay over 600V capability and integrated protection. |
Compared with IRS21844STRPBF and LM5109BMAX/NOPB, the DGD2104S8-13 offers fixed 520ns deadtime and 600V rating in a simpler, lower-cost SO-8 solution - ideal for established designs where shoot-through prevention and bootstrap simplicity outweigh programmability or ultra-high drive strength.
Availability
DGD2104S8-13 is available at Aetrix Electronics and suitable for DC-DC converters, motor controls, and AC-DC power supplies requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.
Supply support for DGD2104S8-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.
The DGD2104 belongs to Diodes' high-voltage gate driver product line, engineered specifically for robust half-bridge control in energy-efficient power conversion systems operating up to 600V.
FAQ
Can DGD2104S8-13 drive SiC MOSFETs?
Yes - its 290mA source / 600mA sink output current and 70ns rise time support gate charging of common 1200V/40mΩ SiC MOSFETs (Qg ≈ 20–30nC) at switching frequencies up to 300kHz. Layout must minimize loop inductance between HO/LO and gate pins to avoid ringing.
What is the minimum bootstrap capacitor value required?
For 600V operation at 100kHz with 50% duty cycle, a 100nF X7R ceramic capacitor rated ≥25V is recommended. Calculations based on worst-case charge loss (IBSQ ≈ 100µA) and gate charge (Qg = 25nC) confirm ≥85nF meets hold-up requirements across temperature.
Does DGD2104S8-13 have built-in shoot-through protection beyond deadtime?
No - it relies solely on its fixed 520ns internal deadtime for shoot-through prevention. No overlap detection, current sensing, or dynamic blanking is implemented. External gate resistors and careful PCB layout remain essential for robust operation.
Is DGD2104S8-13 pin-compatible with DGD2103S8-13?
No - DGD2103S8-13 is an inverting half-bridge driver (HO inverted relative to IN), whereas DGD2104S8-13 is non-inverting. Pinout is identical, but functional behavior differs: swapping them without logic inversion will cause catastrophic shoot-through.
DGD2104S8-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Driven Configuration:
- Half-Bridge
- Channel Type:
- Synchronous
- Number of Drivers:
- 2
- Gate Type:
- IGBT, N-Channel MOSFET
- Voltage - Supply:
- 10V ~ 20V
- Logic Voltage - VIL, VIH:
- 0.8V, 2.5V
- Current - Peak Output (Source, Sink):
- 290mA, 600mA
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- 600 V
- Rise / Fall Time (Typ):
- 70ns, 35ns
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
DGD2104S8-13 FAQ
1.How can I place an order for DGD2104S8-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DGD2104S8-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DGD2104S8-13 reliable?
The price and inventory of DGD2104S8-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DGD2104S8-13 is usually 5 days.
3.What payment methods are accepted for DGD2104S8-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DGD2104S8-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DGD2104S8-13?
DGD2104S8-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DGD2104S8-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DGD2104S8-13?
For technical support, including DGD2104S8-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DGD2104S8-13 requirements.
6.How does Aetrix verify that DGD2104S8-13 is sourced from the original manufacturer or authorized distributors?
All DGD2104S8-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DGD2104S8-13 meets industry standards.
7.What is the process for return or replacement of DGD2104S8-13?
All DGD2104S8-13 units undergo pre-shipment inspection (PSI). If there is an issue with DGD2104S8-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DGD2104S8-13 part is unused and in its original packaging.
Return procedure for DGD2104S8-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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