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Diodes Incorporated DGD2106MS8-13
- Part No.:
- DGD2106MS8-13
- Manufacturer:
- Diodes Incorporated
- Category:
- Gate Drivers
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
DGD2106MS8-13.pdf
- Description:
- IC GATE DRV HALF-BRIDGE 8SO 2.5K
- Quantity:
- Payment:
- Shipping:
Inventory:2,500
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Product details
Overview
DGD2106MS8-13 from Diodes Incorporated is a high-voltage, high-speed dual-channel gate driver IC for N-channel MOSFETs and IGBTs in half-bridge configurations, featuring 600V high-side bootstrap operation, 10–20V VCC supply range, and -40°C to +125°C operating temperature. It delivers 290mA peak high-side and 600mA peak low-side pulsed output current with <300ns propagation delay and <220ns rise time, enabling use in high-frequency DC-DC converters and motor control inverters.
For engineers reviewing the DGD2106MS8-13 datasheet, DGD2106MS8-13 pinout, DGD2106MS8-13 application, or DGD2106MS8-13 equivalent, key selection criteria include bootstrap-compatible 600V high-side capability, TTL/CMOS-compatible 3.3V logic inputs, Schmitt-triggered inputs with internal pull-down, independent undervoltage lockout on VCC and VB, and SO-8 package thermal performance at 200°C/W RθJA.
Technical Context
The DGD2106MS8-13 integrates independent high-side and low-side drivers with floating high-side channel referenced to VS, supporting bootstrap operation up to 600V offset. Its logic inputs (HIN/LIN) accept 0–5V signals with Schmitt triggering and internal pull-down, ensuring noise immunity and defined startup state.
It features separate undervoltage lockout thresholds for VCC (7.0–9.8V) and VB (7.0–9.8V), each with 0.7V hysteresis, and tolerates negative transients on outputs. The device operates with dVS/dt immunity up to 50V/ns and supports CL = 1000pF loads with sub-300ns propagation delays and matched timing (≤30ns delay mismatch).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| High-Side Voltage Rating | 600V max VS-to-VB offset - enables bootstrap-based half-bridge operation in 400V DC bus systems |
| Supply Voltage Range (VCC) | 10V to 20V - supports industrial and automotive-grade 12V/15V gate drive rails |
| Logic Input Compatibility | 3.3V/5V TTL/CMOS - allows direct interface with microcontrollers and PWM controllers without level-shifting |
| Propagation Delay (tON/tOFF) | 100–300ns - ensures precise timing control in >100kHz switching applications |
| Output Peak Current (HO/LO) | 290mA (HO), 600mA (LO) - drives gate capacitance of medium-power MOSFETs (e.g., Qg ≈ 30nC) with fast edge rates |
| UVLO Threshold Hysteresis | 0.7V - prevents oscillation during supply ramp-up/down in noisy power environments |
| Thermal Resistance (RθJA) | 200°C/W - defines maximum continuous power dissipation (≤0.625W) on standard 2-layer FR-4 PCB |
Pinout & Package
Package: SO-8 (Standard), surface-mount, lead-free, RoHS-compliant, moisture sensitivity level 3 per J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 VCC | Low-side and logic supply input | Fixed 10–20V rail powering internal logic and low-side driver stage |
| 2 HIN | High-side logic input | In-phase control signal for HO output; Schmitt-triggered, 3.3V-compatible, internal pull-down |
| 3 LIN | Low-side logic input | In-phase control signal for LO output; identical electrical specs to HIN |
| 4 COM | Logic and low-side ground reference | Common return for VCC, HIN, LIN, and LO; must be connected to system low-side ground |
| 5 LO | Low-side gate drive output | Source-follower compatible output driving N-MOSFET gate to COM; rated for 600mA pulsed sink |
| 6 VS | High-side floating supply return | Reference node for high-side channel; tracks switching node voltage in bootstrap configuration |
| 7 HO | High-side gate drive output | Drives N-MOSFET gate referenced to VS; rated for 290mA pulsed source, tolerant to negative transients |
| 8 VB | High-side floating supply input | Bootstrap capacitor connection point; supplies high-side driver stage referenced to VS |
Key Features
| Feature | Design Value |
|---|---|
| Floating high-side driver with 600V bootstrap capability | Enables cost-effective half-bridge topologies without isolated supplies in AC-DC and motor drives |
| Schmitt-triggered logic inputs with internal pull-down | Eliminates external biasing components and improves noise margin in electrically noisy inverter environments |
| Independent UVLO on VCC and VB supplies | Prevents shoot-through by disabling both outputs if either supply drops below safe threshold |
| Output transient tolerance and dVS/dt immunity (50V/ns) | Ensures reliable operation during fast-switching events in high dv/dt power stages |
| Extended temperature range (−40°C to +125°C) | Supports under-hood automotive, industrial motor control, and high-ambient power supply designs |
Applications
| DC-DC Converters | Motor Controls |
|---|---|
Use Scenario: Isolated and non-isolated buck-boost and LLC resonant converters with 400V input bus. IC Role / Device Role / Timing Role: Half-bridge gate driver synchronizing high-side and low-side MOSFET switching with matched propagation delay and dead-time control. Use Value: Enables >100kHz operation with <30ns timing skew, reducing conduction losses and improving efficiency in telecom and server PSUs. |
Use Scenario: Three-phase BLDC or PMSM inverters in HVAC compressors and industrial pumps. IC Role / Device Role / Timing Role: High-reliability gate driver for 600V-class IGBTs/MOSFETs with robust negative transient tolerance on HO/LO outputs. Use Value: Sustains gate drive integrity during phase-current commutation spikes, minimizing false turn-on and improving system MTBF. |
| AC-DC Power Supplies | Class D Power Amplifiers |
Use Scenario: Active clamp forward and PFC boost stages in 80+ Titanium-rated SMPS. IC Role / Device Role / Timing Role: Bootstrap-configured high-side driver delivering precise 15V gate drive with UVLO protection during brownout conditions. Use Value: Maintains stable gate voltage across wide input line ranges (90–264VAC), preventing MOSFET overvoltage failure during transient surges. |
Use Scenario: High-efficiency audio amplifiers driving 4Ω/8Ω loads at >50W with minimal THD+N. IC Role / Device Role / Timing Role: Dual-channel driver providing fast, matched rise/fall times (<220ns/<80ns) to minimize switching distortion. Use Value: Reduces crossover distortion and EMI through tight tR/tF control and <30ns delay matching between channels. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-side/low-side gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRS21844STRPBF | Higher 650V high-side rating; integrated bootstrap diode; no Schmitt inputs; 100ns typical tON | Preferred in higher-voltage PFC stages where integrated diode simplifies layout; lacks 3.3V logic compatibility | Select when bootstrap diode integration reduces BOM count and 650V margin is required; verify logic interface compatibility |
| LM5113MMX/NOPB | Separate high-side/low-side enable pins; 100V max VS; 2A peak output; requires external level shifter for 3.3V logic | Better suited for low-voltage synchronous buck regulators (<60V bus); not suitable for 400V+ inverters | Choose for high-current, low-voltage DC-DC where 2A drive strength outweighs voltage limitations |
Compared with IRS21844STRPBF and LM5113MMX/NOPB, the DGD2106MS8-13 uniquely balances 600V capability, 3.3V logic support, and SO-8 thermal performance-making it optimal for cost-sensitive, mid-power industrial inverters and 400V-class SMPS where layout simplicity and noise immunity are critical.
Availability
DGD2106MS8-13 is available at Aetrix Electronics and suitable for DC-DC converters, motor controls, and AC-DC power supplies requiring stable component supply, extended temperature operation, and bootstrap-based half-bridge gate drive functionality.
Supply support for DGD2106MS8-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and connectivity solutions for industrial, computing, and automotive markets.
The DGD2106MS8-13 belongs to Diodes' high-voltage gate driver product line, engineered specifically for efficient, robust half-bridge switching in space-constrained, thermally demanding power conversion systems.
FAQ
What is the maximum allowable dVS/dt for reliable DGD2106MS8-13 operation?
The DGD2106MS8-13 is rated for 50V/ns dVS/dt, verified under recommended operating conditions. This specification ensures immunity to false triggering during fast-switching transitions in hard-switched topologies. Exceeding this rate may cause unintended high-side turn-on due to capacitive coupling; layout practices such as minimized VS loop area and proper gate resistor selection are essential to maintain margin.
Can DGD2106MS8-13 drive IGBTs directly without external components?
Yes-the DGD2106MS8-13 provides sufficient 290mA/600mA peak output current and 15V gate drive capability to directly drive medium-power IGBTs with gate charge ≤50nC. Its output voltage swing (0.05V saturation at 2mA) and negative transient tolerance ensure reliable turn-off and latch-up immunity, eliminating need for external gate resistors in most cases.
Does DGD2106MS8-13 require external bootstrap diode and capacitor?
Yes-it requires an external bootstrap diode (fast recovery, ≥100V, ≤100ns trr) and capacitor (typically 0.1µF X7R ceramic). Unlike integrated-diode drivers, the DGD2106MS8-13 relies on external components for bootstrap charging; Diodes recommends using a 1N4148W or equivalent, placed within 5mm of VB/VS pins to minimize parasitic inductance.
How does the dual UVLO function protect the power stage?
The DGD2106MS8-13 implements independent UVLO on VCC (7.0–9.8V) and VB (7.0–9.8V), each with 0.7V hysteresis. If either supply falls below its threshold, both HO and LO outputs are forced low, preventing partial gate drive that could cause shoot-through or device destruction-critical during startup, brownout, or bootstrap capacitor discharge events.
DGD2106MS8-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- Half-Bridge
- Channel Type:
- Synchronous
- Number of Drivers:
- 2
- Gate Type:
- IGBT, N-Channel MOSFET
- Voltage - Supply:
- 10V ~ 20V
- Logic Voltage - VIL, VIH:
- 0.6V, 2.5V
- Current - Peak Output (Source, Sink):
- 290mA, 600mA
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- 600 V
- Rise / Fall Time (Typ):
- 100ns, 35ns
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
DGD2106MS8-13 FAQ
1.How can I place an order for DGD2106MS8-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DGD2106MS8-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DGD2106MS8-13 reliable?
The price and inventory of DGD2106MS8-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DGD2106MS8-13 is usually 5 days.
3.What payment methods are accepted for DGD2106MS8-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DGD2106MS8-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DGD2106MS8-13?
DGD2106MS8-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DGD2106MS8-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DGD2106MS8-13?
For technical support, including DGD2106MS8-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DGD2106MS8-13 requirements.
6.How does Aetrix verify that DGD2106MS8-13 is sourced from the original manufacturer or authorized distributors?
All DGD2106MS8-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DGD2106MS8-13 meets industry standards.
7.What is the process for return or replacement of DGD2106MS8-13?
All DGD2106MS8-13 units undergo pre-shipment inspection (PSI). If there is an issue with DGD2106MS8-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DGD2106MS8-13 part is unused and in its original packaging.
Return procedure for DGD2106MS8-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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