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Diodes Incorporated DGD2117S8-13
- Part No.:
- DGD2117S8-13
- Manufacturer:
- Diodes Incorporated
- Category:
- Gate Drivers
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
DGD2117S8-13.pdf
- Description:
- IC GATE DRVR HIGH-SIDE 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:1,901
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Product details
Overview
DGD2117S8-13 from Diodes Incorporated is a single-channel high-voltage gate driver IC designed to drive one N-channel MOSFET or IGBT in bootstrap-configured high-side switching circuits. It supports 600V floating supply offset (VS), features Schmitt-triggered logic input with internal pulldown, undervoltage lockout on both VCC and VB, and operates across –40°C to +125°C in SO-8 (Type TH) package. It is used in DC-DC converters and motor control inverters requiring robust high-side gate drive.
For engineers reviewing the DGD2117S8-13 datasheet, DGD2117S8-13 pinout, DGD2117S8-13 application, or DGD2117S8-13 equivalent, this page delivers verified technical context, real-world timing specs (tON = 125–200 ns, tOFF = 105–180 ns), thermal limits (RθJA = 200°C/W), and validated alternative part options for high-voltage gate drive design.
Technical Context
The DGD2117S8-13 implements a single floating channel architecture optimized for bootstrap-based high-side gate driving, with VS referenced to HO and VB supplying the high-side floating rail. Its logic input (IN) is in-phase with HO output, enabling direct PWM control without external inversion.
It integrates dual undervoltage lockout (UVLO) circuits - one for VCC (7.2–9.6 V thresholds) and one for VB (identical range) - ensuring safe turn-off during supply droop. The output stage delivers 290 mA peak source and 600 mA peak sink current into 1000 pF load, with rise/fall times of 75–130 ns and 35–65 ns respectively.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| High-Side Floating Voltage | VB up to +624 V absolute; supports 600 V offset (VS) - enables use in 400 V bus systems with margin. |
| Propagation Delay | tON = 125–200 ns, tOFF = 105–180 ns - ensures precise timing control in >100 kHz switching applications. |
| Output Drive Strength | IO+ = 290 mA (source), IO− = 600 mA (sink) - sufficient to rapidly charge/discharge gate capacitance of ≤1 nF MOSFETs. |
| Logic Supply Range | VCC = 10–20 V - compatible with standard industrial 12 V/15 V rails and tolerant of transient dips. |
| UVLO Thresholds | VCCUV+/VBSUV+ = 7.6–9.6 V; hysteresis = 0.4 V - prevents erratic switching during brown-out conditions. |
| Operating Temperature | TA = –40°C to +125°C - qualified for under-hood automotive and industrial power converter environments. |
Pinout & Package
Package: SO-8 (Type TH), surface-mount, lead-free, RoHS-compliant, moisture sensitivity level 3 per J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 VCC | Logic and gate driver supply input | Primary low-side supply rail; powers internal logic and level-shifter; must be decoupled locally. |
| 2 IN | Logic input for HO output | In-phase control signal; Schmitt-triggered with internal pulldown - rejects noise and ensures clean edge detection. |
| 3 COM | Logic ground reference | Common return for VCC, IN, and internal logic; must be isolated from power ground in high-side configurations. |
| 4, 5 NC | No internal connection | Unbonded pins; no electrical function - must remain unconnected and may be left floating or grounded per layout best practice. |
| 6 VS | High-side floating supply return | Reference node for HO output; tied to source of driven MOSFET; defines floating domain potential. |
| 7 HO | High-side gate drive output | Drives MOSFET/IGBT gate directly; rated for ±0.3 V beyond VB/VS - withstands negative transients during switching. |
| 8 VB | High-side floating supply input | Bootstrap capacitor connection point; supplies gate drive energy for high-side operation; requires external 0.1 µF ceramic cap. |
Key Features
| Feature | Design Value |
|---|---|
| Floating channel UVLO | Independent VB undervoltage lockout prevents high-side shoot-through during bootstrap capacitor discharge. |
| Negative transient tolerance | HO output withstands –0.3 V below VS - suppresses false turn-on caused by source inductance ringing. |
| Schmitt-trigger input | Hysteresis ≥3.5 V (VIH = 9.5 V, VIL = 6.0 V) - eliminates metastability and ensures reliable PWM edge capture. |
| Thermal robustness | RθJA = 200°C/W on 2-layer FR-4 - enables 0.625 W dissipation at TA = 85°C without heatsink in compact layouts. |
Applications
| DC-DC Converters | Motor Control Inverters |
|---|---|
Use Scenario: Isolated buck-boost or half-bridge DC-DC converters operating from 400 V DC bus with synchronous rectification. IC Role / Device Role / Timing Role: High-side gate driver controlling upper switch in half-bridge topology; provides fast, noise-immune turn-on/turn-off timing. Use Value: Enables >100 kHz switching with <200 ns propagation delay and 600 V blocking capability, improving power density and efficiency. |
Use Scenario: Three-phase BLDC motor drives in HVAC blowers or industrial pumps using discrete IGBTs. IC Role / Device Role / Timing Role: Single-channel high-side driver for phase-leg upper switch; synchronized via PWM controller with dead-time management. Use Value: Delivers 600 mA sink current to rapidly discharge IGBT gates, minimizing conduction losses and thermal stress during commutation. |
| AC-DC Power Supplies | Class D Audio Amplifiers |
Use Scenario: PFC + LLC resonant combo supplies in server PSUs where high-side switch drives boost inductor. IC Role / Device Role / Timing Role: Bootstrap-configured gate driver for active clamp or PFC switch; interfaces with digital controller via CMOS-level signals. Use Value: Wide 10–20 V VCC range accommodates auxiliary supply variations; UVLO hysteresis prevents oscillation during line sags. |
Use Scenario: Half-bridge Class D amplifier output stage driving 4 Ω loads at 300 W with >90% efficiency. IC Role / Device Role / Timing Role: High-speed gate driver for upper MOSFET in output H-bridge; handles rapid polarity reversal with minimal cross-conduction. Use Value: 35 ns fall time and 75 ns rise time reduce switching losses; negative transient tolerance suppresses gate bounce during zero-crossing transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-side gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRS2104S | Single-channel, 600 V, but lacks independent VB UVLO; only VDD UVLO present. | Requires external bootstrap monitoring circuitry for reliable high-side protection in critical power stages. | Acceptable for cost-sensitive, non-safety-critical DC-DC designs where system-level UVLO is implemented externally. |
| UCC27531DR | 600 V capable, but not bootstrap-optimized; requires isolated supply or transformer drive for high-side use. | Not pin-compatible; needs redesign of gate drive network and layout for floating operation. | Preferred when designing new systems requiring higher drive strength (4 A peak) and tighter propagation matching across channels. |
Compared with IRS2104S and UCC27531DR, the DGD2117S8-13 uniquely integrates dual independent UVLO (VCC + VB), native bootstrap support, and SO-8 pinout optimized for compact high-voltage layouts - making it optimal for retrofitting or space-constrained industrial inverters where reliability under voltage transients is critical.
Availability
DGD2117S8-13 is available at Aetrix Electronics and suitable for DC-DC converters, motor control inverters, and AC-DC power supplies requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for industrial and embedded OEM programs.
Supply support for DGD2117S8-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in power management, signal integrity, and connectivity solutions for industrial, computing, and consumer markets.
The DGD2117S8-13 belongs to Diodes' high-voltage gate driver product line, engineered specifically for bootstrap-based high-side switching in 400–600 V bus applications - emphasizing robustness, noise immunity, and thermal resilience in compact SO-8 packaging.
FAQ
What is the maximum allowable dVS/dt for DGD2117S8-13?
The DGD2117S8-13 specifies an allowable offset supply transient rate of 50 V/ns. This limit ensures internal level-shifting circuitry remains immune to capacitive coupling during fast high-side switching events. Exceeding this rate risks false triggering or latch-up, especially when VS swings rapidly due to parasitic inductance in the source path.
Can DGD2117S8-13 drive IGBTs with gate charge >100 nC?
Yes - with appropriate external gate resistor selection. The DGD2117S8-13 delivers 600 mA peak sink current, enabling sub-200 ns turn-off for IGBTs up to ~120 nC Qg when paired with a 10 Ω gate resistor. For larger IGBTs, parallel drivers or gate resistors <5 Ω (with attention to EMI) are recommended to maintain timing integrity.
Is DGD2117S8-13 pin-compatible with DGD2118S8-13?
No - they differ at Pin 2: DGD2117S8-13 uses IN (in-phase with HO), while DGD2118S8-13 uses IN* (out-of-phase). Swapping them without inverting the input signal causes complementary outputs to conflict, risking shoot-through. Layouts must match the specific variant's logic polarity.
Does DGD2117S8-13 require a bootstrap diode?
Yes - a fast recovery or Schottky diode (e.g., 1N4148 or BAT54) is required between VCC and VB to charge the bootstrap capacitor during low-side conduction. The diode must handle ≥100 mA peak forward current and block ≥20 V reverse voltage; omission results in VB collapse and loss of high-side drive.
DGD2117S8-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Driven Configuration:
- High-Side
- Channel Type:
- Single
- Number of Drivers:
- 1
- Gate Type:
- IGBT, N-Channel MOSFET
- Voltage - Supply:
- 10V ~ 20V
- Logic Voltage - VIL, VIH:
- 6V, 9.5V
- Current - Peak Output (Source, Sink):
- 290mA, 600mA
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- 600 V
- Rise / Fall Time (Typ):
- 75ns, 35ns
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
DGD2117S8-13 FAQ
1.How can I place an order for DGD2117S8-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DGD2117S8-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DGD2117S8-13 reliable?
The price and inventory of DGD2117S8-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DGD2117S8-13 is usually 5 days.
3.What payment methods are accepted for DGD2117S8-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DGD2117S8-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DGD2117S8-13?
DGD2117S8-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DGD2117S8-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DGD2117S8-13?
For technical support, including DGD2117S8-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DGD2117S8-13 requirements.
6.How does Aetrix verify that DGD2117S8-13 is sourced from the original manufacturer or authorized distributors?
All DGD2117S8-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DGD2117S8-13 meets industry standards.
7.What is the process for return or replacement of DGD2117S8-13?
All DGD2117S8-13 units undergo pre-shipment inspection (PSI). If there is an issue with DGD2117S8-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DGD2117S8-13 part is unused and in its original packaging.
Return procedure for DGD2117S8-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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