Diodes Incorporated DGD2118S8-13

Overview

DGD2118S8-13 from Diodes Incorporated is a single-channel high-voltage gate driver optimized for bootstrap-configured n-channel MOSFET or IGBT switching in high-side applications, featuring 600V floating channel capability, 10–20V logic supply range, Schmitt-triggered inverted input (IN*), and undervoltage lockout on both VCC and VB supplies. It operates across –40°C to +125°C and is housed in an SO-8 (Type TH) package.

For engineers reviewing the DGD2118S8-13 datasheet, DGD2118S8-13 pinout, DGD2118S8-13 application in motor control or DC-AC inverters, or DGD2118S8-13 equivalent for high-side gate driving, this page delivers verified functional identity, validated pin roles, confirmed timing specs (tON ≤ 200 ns, tOFF ≤ 180 ns), thermal limits (TJ = +150°C), and real-world substitution guidance.

Technical Context

The DGD2118 implements an inverting logic interface (IN* pin) that drives the high-side output (HO) out-of-phase with the input signal, enabling direct compatibility with PWM controllers requiring complementary drive in half-bridge topologies. Its floating channel supports VS offset up to 600V with dVS/dt tolerance of 50 V/ns, and internal UVLO thresholds (VCCUV− = 7.2–9.2 V, VBSUV− = 7.2–9.2 V) ensure safe turn-off during supply sag.

Output stage uses high-pulse-current buffers (IO+ = 200–290 mA, IO− = 420–600 mA) to minimize cross-conduction risk, while logic inputs tolerate negative transients and feature internal pulldown. The device excludes low-side output - it is strictly a single high-side driver requiring external bootstrap diode and capacitor.

Key Specifications

Pinout & Package

Package: SO-8 (Type TH), surface-mount, lead-free, RoHS-compliant, moisture sensitivity level 3 per J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side gate driver applications.

Compared with IRS2118PbF and LM5113SDX/NOPB, the DGD2118S8-13 uniquely provides inverting logic + 600V floating operation in SO-8, making it irreplaceable in legacy high-voltage bootstrap designs where input polarity and voltage rating are fixed constraints.

Availability

DGD2118S8-13 is available at Aetrix Electronics and suitable for motor controls, DC-AC inverters, and industrial DC-DC converters requiring stable component supply, long-lifecycle support, and traceable sourcing for production ramp.

Supply support for DGD2118S8-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and automotive markets.

The DGD2118 belongs to Diodes' high-voltage gate driver product line, engineered specifically for bootstrap-based high-side switching in energy-efficient power conversion systems operating up to 600V DC bus.

FAQ

What is the key functional difference between DGD2117S8-13 and DGD2118S8-13?

The DGD2117 features non-inverting logic (IN pin), while the DGD2118 uses inverting logic (IN* pin). This means a logic-high input on DGD2118 produces a logic-low HO output, enabling direct interface with standard PWM controllers that require complementary high-side drive without external inversion. Both share identical pinout, voltage ratings, timing, and thermal specs.

Can DGD2118S8-13 drive SiC MOSFETs effectively?

Yes - its 420–600 mA sink current and 200–290 mA source current, combined with ≤130 ns rise time and ≤65 ns fall time into 1000 pF, support fast switching of typical 10–30 mΩ SiC MOSFETs. However, layout must minimize parasitic inductance on HO/VS paths to preserve edge integrity and prevent oscillation.

Why are pins 4 and 5 marked "NC" and not used?

Pins 4 and 5 have no internal bond wires or silicon connections - they are mechanical placeholders in the SO-8 (Type TH) mold. Leaving them unconnected poses no functional risk. PCB footprints may omit these pads to reduce copper area near high-dV/dt nodes, improving creepage and EMI performance.

Is DGD2118S8-13 qualified for automotive applications?

No - the DGD2118S8-13 is not AEC-Q100 qualified. Diodes offers automotive-grade variants (e.g., DGD2118Q) with PPAP documentation, IATF 16949 manufacturing, and extended qualification testing. For automotive designs, contact Diodes directly for the Q-grade part number and change-control documentation.