Diodes Incorporated DGD21844MS14-13

Overview

DGD21844MS14-13 from Diodes Incorporated is a 600V half-bridge gate driver IC in SO-14 (Type TH) package, designed to drive two N-channel MOSFETs or IGBTs in high-side/low-side configurations. It delivers 1.9A source / 2.3A sink peak output current, supports bootstrap operation up to 600V, and features programmable deadtime via external resistor for cross-conduction prevention in motor control inverters.

For engineers reviewing the DGD21844MS14-13 datasheet, DGD21844MS14-13 pinout, DGD21844MS14-13 application, or DGD21844MS14-13 equivalent, key selection criteria include high-side floating voltage capability (VS = −5V to +600V), TTL/CMOS-compatible 3.3V logic inputs, undervoltage lockout on both VCC and VB supplies, and ±40ns delay matching between HO/LO outputs.

Technical Context

The DGD21844MS14-13 integrates independent high-side and low-side drivers with floating high-side architecture enabled by bootstrap operation, supporting VS offset up to 600V relative to COM. Its Schmitt-triggered logic inputs (IN, SD*) accept 3.3V–5V logic levels and feature internal pull-downs for noise immunity.

Deadtime is externally programmable via resistor on DT pin (280–520 ns range), while propagation delays are tightly matched: tDMON ≤ 90 ns and tDMOFF ≤ 40 ns. Undervoltage lockout thresholds are 8.2V (typ) for both VCC and VB supplies, with hysteresis of ~0.8V.

Key Specifications

Pinout & Package

Package: SO-14 (Type TH), surface-mount, lead-free, RoHS-compliant molded plastic with matte tin-plated leads. Moisture sensitivity level 3 per J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge gate driver applications.

Compared with IR2104S and UCC27211D, the DGD21844MS14-13 uniquely combines 3.3V logic compatibility, programmable deadtime, and matched HO/LO delays in a single SO-14 package - simplifying design for industrial inverters where timing precision and MCU interface simplicity are critical.

Availability

DGD21844MS14-13 is available at Aetrix Electronics and suitable for motor control inverters, solar DC-AC inverters, and industrial AC-DC power supplies requiring stable component supply across extended temperature ranges and high-reliability gate drive performance.

Supply support for DGD21844MS14-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.

The DGD21844MS14-13 belongs to Diodes' high-voltage gate driver product line, engineered specifically for robust half-bridge switching in motor drives, renewable energy inverters, and high-efficiency power conversion systems operating up to 125°C ambient.

FAQ

What is the maximum allowable dVS/dt for the DGD21844MS14-13 high-side floating supply?

The DGD21844MS14-13 specifies a maximum dVS/dt rating of 50 V/ns for the high-side floating supply (VS pin). This limit ensures reliable operation under fast-switching conditions typical in SiC and GaN-based inverters. Exceeding this rate may cause false triggering or latch-up due to capacitive coupling into internal level-shift circuitry. Layout best practices-such as minimizing VS loop area and using local ceramic decoupling near VB/VS-help maintain compliance.

Can the DGD21844MS14-13 drive both MOSFETs and IGBTs in the same half-bridge configuration?

Yes, the DGD21844MS14-13 is explicitly rated to drive both N-channel MOSFETs and IGBTs in half-bridge topology. Its 1.9A source / 2.3A sink output current, 600V VS rating, and robust negative transient tolerance on outputs make it suitable for IGBT gate charge requirements and fast MOSFET switching. The programmable deadtime further accommodates differing turn-on/turn-off characteristics between device types.

How does the shutdown (SD*) pin behave during power-up sequences?

The SD* pin is active-low with internal pull-down, ensuring both HO and LO outputs remain disabled until a valid high logic level is applied. During VCC ramp-up, undervoltage lockout holds outputs inactive until VCC exceeds 8.2V (typ), preventing partial drive. Once enabled, asserting SD* pulls HO/LO low immediately, with 180–270ns propagation delay, providing deterministic fault response in overcurrent or thermal shutdown scenarios.

Is the DGD21844MS14-13 compliant with automotive AEC-Q100 standards?

No, the DGD21844MS14-13 is not AEC-Q100 qualified. Diodes Incorporated states that automotive-grade variants require specific change control, PPAP capability, and manufacturing in IATF 16949-certified facilities - none of which apply to this part. It is rated for industrial temperature range (−40°C to +125°C) and intended for industrial, commercial, and renewable energy applications, not automotive safety-critical systems.