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Diodes Incorporated DGD2184MS8-13
- Part No.:
- DGD2184MS8-13
- Manufacturer:
- Diodes Incorporated
- Category:
- Gate Drivers
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
DGD2184MS8-13.pdf
- Description:
- IC GATE DRVR HALF-BRIDGE 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:5,992
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Product details
Overview
DGD2184MS8-13 from Diodes Incorporated is a 600V half-bridge gate driver IC in SO-8 (Type TH) package, designed to drive two N-channel MOSFETs or IGBTs in high-side/low-side configuration. It features 1.9A source / 2.3A sink output current, fixed 395ns internal deadtime, and TTL/CMOS-compatible logic inputs down to 3.3V. Used in DC-DC converters, motor controls, and Class D amplifiers where bootstrap-based high-side switching up to 600V is required.
For engineers reviewing the DGD2184MS8-13 datasheet, DGD2184MS8-13 pinout, DGD2184MS8-13 application, or DGD2184MS8-13 equivalent, key selection criteria include high-side floating capability (VS up to 600V), matched propagation delays (tDMON ≤ 90ns), undervoltage lockout thresholds (VCCUV− = 7.4V), and SO-8 thermal resistance (RθJA = 200°C/W).
Technical Context
The DGD2184MS8-13 integrates independent high-side and low-side drivers with a fixed internal deadtime circuit (345–445ns) to prevent shoot-through during switching transitions. Its bootstrap architecture enables high-side operation with VS referenced up to 600V relative to COM, while maintaining logic-level compatibility via Schmitt-triggered IN and SD* inputs.
Undervoltage lockout (UVLO) operates independently on VCC (8.2V typical turn-on) and VB/VS (8.9V typical), ensuring safe startup and fault recovery. Output stages deliver fast edge rates (tr ≤ 60ns, tf ≤ 35ns) into 1nF loads and tolerate negative transients at LO and HO pins without latch-up.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| High-Side Voltage Rating | 600V max VS offset - enables use in 400V DC bus systems with margin |
| Output Current | 1.9A source / 2.3A sink - drives gate charge of ≥100nC MOSFETs at 100kHz+ |
| Internal Deadtime | 395ns typical - prevents cross-conduction in half-bridge without external timing |
| Logic Supply Range | 10V–20V VCC - supports industrial 12V/15V rails with UVLO hysteresis |
| Input Compatibility | 3.3V–5V TTL/CMOS - interfaces directly with microcontrollers and PWM controllers |
| Propagation Delay | 585ns (ton), 170ns (toff) - ensures precise timing control in high-frequency inverters |
| Operating Temp | −40°C to +125°C - qualified for under-hood automotive and industrial ambient conditions |
Pinout & Package
Package: SO-8 (Type TH), surface-mount, lead-free, RoHS-compliant, moisture sensitivity level 3.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 IN | Logic input for both HO and LO outputs | In-phase control signal; Schmitt-triggered with internal pull-down for noise immunity |
| 2 SD* | Active-low shutdown input | Disables both outputs when pulled low; threshold VSDTH− = 0.8V (max) |
| 3 COM | Low-side return and logic ground reference | Common return path for VCC, IN, SD*, and LO - must be low-impedance |
| 4 LO | Low-side gate drive output | Drives N-MOSFET gate referenced to COM; tolerant to −5V transient |
| 5 VCC | Fixed supply for low-side driver and logic | 10–20V input with UVLO (7.4–9.8V); supplies quiescent current ICCQ ≤ 1.8mA |
| 6 VS | High-side floating supply return | Reference node for high-side driver; tracks high-side source voltage up to 600V |
| 7 HO | High-side gate drive output | Drives N-MOSFET gate referenced to VS; tolerant to −0.3V transient |
| 8 VB | High-side floating supply input | Bootstrap-supplied rail (VS + 10V to VS + 20V); powers high-side driver stage |
Key Features
| Feature | Design Value |
|---|---|
| Floating high-side driver | Supports VS up to 600V with dVS/dt tolerance of 50V/ns - enables robust bootstrap operation in noisy power stages |
| Matched propagation delay | tDMON ≤ 90ns, tDMOFF ≤ 40ns - minimizes timing skew between HO/LO edges for precise deadtime enforcement |
| Integrated UVLO protection | Independent VCC and VB/VS monitoring with hysteresis - prevents erratic switching during brown-out or bootstrap failure |
| High-current output buffers | 1.9A/2.3A peak drive - reduces MOSFET switching losses and enables faster transition times |
| SO-8 thermal performance | RθJA = 200°C/W on 2-layer FR-4 - allows 625mW dissipation at TA = 25°C before derating |
Applications
| DC-DC Converters | Motor Control Systems |
|---|---|
Use Scenario: Isolated or non-isolated buck-boost and LLC resonant converters operating from 300–400V DC bus. IC Role / Device Role / Timing Role: Half-bridge gate driver providing synchronized, deadtime-controlled HO/LO signals to primary-side N-MOSFETs. Use Value: Fixed 395ns deadtime eliminates need for external timing components; 600V VS rating supports 400V bus with safety margin. |
Use Scenario: Brushless DC (BLDC) and permanent magnet synchronous motor (PMSM) inverters in HVAC blowers and industrial pumps. IC Role / Device Role / Timing Role: High-reliability gate driver enabling 20kHz+ PWM with low propagation skew and transient-tolerant outputs. Use Value: 1.9A/2.3A drive strength reduces MOSFET gate charge time; −40°C to +125°C range supports enclosed motor drive environments. |
| AC-DC Power Supplies | Class D Audio Amplifiers |
Use Scenario: Active clamp forward or phase-shifted full-bridge SMPS in telecom rectifiers and server PSUs. IC Role / Device Role / Timing Role: Bootstrap-based high-side driver delivering precise timing and shoot-through protection in high-efficiency topologies. Use Value: Independent UVLO on VCC and VB ensures fail-safe shutdown during bootstrap capacitor discharge or supply sag. |
Use Scenario: High-fidelity, high-power audio amplifiers requiring low-distortion, high-slew-rate switching. IC Role / Device Role / Timing Role: Gate driver minimizing deadtime-induced crossover distortion through tight HO/LO matching (tDMON ≤ 90ns). Use Value: Fast rise/fall times (tr ≤ 60ns, tf ≤ 35ns) preserve PWM fidelity; SO-8 footprint simplifies layout in space-constrained amplifier PCBs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar half-bridge gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IR2104S | Lower 600V VS rating but no integrated deadtime; requires external RC timing network | Lacks fixed deadtime and tighter propagation matching (tDMON up to 150ns) | Choose when design flexibility in deadtime tuning outweighs need for guaranteed shoot-through prevention |
| FAN7382MX | Higher 625V VS rating, but lower 1.5A/1.8A output current and wider deadtime variation (±100ns) | Less suitable for high-speed, high-current MOSFETs due to reduced drive strength and looser timing specs | Prefer for cost-sensitive, lower-power (<500W) applications where thermal margin is less constrained |
Compared with IR2104S and FAN7382MX, the DGD2184MS8-13 delivers superior timing precision (≤90ns delay matching), higher drive current, and guaranteed internal deadtime-making it optimal for high-efficiency, high-reliability 1kW+ half-bridge designs where shoot-through risk must be minimized.
Availability
DGD2184MS8-13 is available at Aetrix Electronics and suitable for DC-DC converters, motor control systems, and Class D audio amplifiers requiring stable component supply across production lifecycles.
Supply support for DGD2184MS8-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in power management, signal integrity, and connectivity solutions for industrial, computing, and consumer markets.
The DGD2184MS8-13 belongs to Diodes' high-voltage gate driver product line, engineered specifically for robust half-bridge switching in high-efficiency power conversion systems operating up to 600V.
FAQ
What is the maximum allowable dVS/dt for reliable high-side operation?
The DGD2184MS8-13 is rated for dVS/dt up to 50V/ns, verified per datasheet Absolute Maximum Ratings. This specification ensures stable operation during fast-switching events in hard-switched topologies. Exceeding this rate may cause false triggering or latch-up; layout practices such as short, low-inductance VS traces and proper bootstrap capacitor placement are critical to maintain compliance.
Does the DGD2184MS8-13 support 3.3V-only microcontroller interfacing without level shifting?
Yes - both IN and SD* inputs accept 3.3V logic levels directly, with VIH(min) = 2.5V and VIL(max) = 0.8V at VCC = 10–20V. The Schmitt-triggered inputs provide 1.7V hysteresis, enhancing noise immunity in electrically noisy power stage environments without requiring external level shifters or pull-up resistors.
How is undervoltage lockout implemented on the high-side supply (VB/VS)?
UVLO on the high-side monitors the VB-to-VS differential. Activation occurs when VB − VS falls below 7.4V (VBSUV−), disabling HO until the differential rises above 8.9V (VBSUV+). This dual-threshold hysteresis prevents oscillation during bootstrap capacitor recharge cycles and ensures clean startup after power-up or fault recovery.
Can the DGD2184MS8-13 drive IGBTs in parallel configurations?
Yes - its 2.3A sink current and 1.9A source current support driving multiple paralleled IGBT gates, provided total gate charge (Qg) remains within safe SOA limits. Layout must ensure matched gate trace lengths and individual gate resistors to avoid dynamic current imbalance; thermal derating applies above 100°C junction temperature.
DGD2184MS8-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- Half-Bridge
- Channel Type:
- Synchronous
- Number of Drivers:
- 2
- Gate Type:
- IGBT, N-Channel MOSFET
- Voltage - Supply:
- 10V ~ 20V
- Logic Voltage - VIL, VIH:
- 0.8V, 2.5V
- Current - Peak Output (Source, Sink):
- 1.4A, 1.8A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- 600 V
- Rise / Fall Time (Typ):
- 40ns, 20ns
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO Type TH
DGD2184MS8-13 FAQ
1.How can I place an order for DGD2184MS8-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DGD2184MS8-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DGD2184MS8-13 reliable?
The price and inventory of DGD2184MS8-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DGD2184MS8-13 is usually 5 days.
3.What payment methods are accepted for DGD2184MS8-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DGD2184MS8-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DGD2184MS8-13?
DGD2184MS8-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DGD2184MS8-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DGD2184MS8-13?
For technical support, including DGD2184MS8-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DGD2184MS8-13 requirements.
6.How does Aetrix verify that DGD2184MS8-13 is sourced from the original manufacturer or authorized distributors?
All DGD2184MS8-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DGD2184MS8-13 meets industry standards.
7.What is the process for return or replacement of DGD2184MS8-13?
All DGD2184MS8-13 units undergo pre-shipment inspection (PSI). If there is an issue with DGD2184MS8-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DGD2184MS8-13 part is unused and in its original packaging.
Return procedure for DGD2184MS8-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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