Diodes Incorporated DGD21904MS14-13

Overview

DGD21904MS14-13 from Diodes Incorporated is a high-voltage, high-speed half-bridge gate driver IC for N-channel MOSFETs and IGBTs, featuring 600V high-side bootstrap operation, 4.5A sink/source output drive capability, TTL/CMOS-compatible 3.3V logic inputs, and undervoltage lockout on both high- and low-side supplies. It operates across –40°C to +125°C and is used in DC-DC converters, motor controls, and Class D amplifiers.

For engineers reviewing the DGD21904MS14-13 datasheet, DGD21904MS14-13 pinout, DGD21904MS14-13 application, or DGD21904MS14-13 equivalent, key selection criteria include high-side dV/dt immunity (50 V/ns), matched propagation delays (≤50 ns), bootstrap voltage tolerance (VB up to +624 V), and SO-14 thermal resistance (RθJA = 145 °C/W).

Technical Context

The DGD21904MS14-13 integrates independent high-side and low-side drivers with floating high-side architecture enabling bootstrap operation up to 600V offset. Its Schmitt-triggered HIN/LIN inputs provide noise immunity, while internal UVLO thresholds (VCCUV± ≈ 7.6–9.8 V, VBSUV± ≈ 7.6–9.8 V) ensure safe turn-on only within valid supply ranges.

It delivers matched timing performance: tON/tOFF typ. 140 ns (VS = 0 V), tDM ≤ 50 ns, tR/tF typ. 25–50 ns into 1000 pF load. The SO-14 package supports industrial thermal management with RθJA = 145 °C/W on JEDEC 2-layer FR-4 board.

Key Specifications

Pinout & Package

Package: SO-14 (Type TH), surface-mount, lead-free, RoHS-compliant, moisture sensitivity level 3 per J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge gate driver applications.

Compared with IR2104PbF and UCC27211DR, the DGD21904MS14-13 uniquely combines 600V robustness, 4.5A drive, integrated Schmitt inputs, and matched timing in SO-14-making it optimal for industrial 400V bus converters and motor drives requiring production-grade reliability without added BOM components.

Availability

DGD21904MS14-13 is available at Aetrix Electronics and suitable for DC-DC converters, motor controls, and AC-DC power supplies requiring stable component supply, extended temperature support, and high-voltage gate drive integrity.

Supply support for DGD21904MS14-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.

The DGD21904MS14-13 belongs to Diodes' high-voltage gate driver product line, engineered specifically for robust half-bridge control in energy-efficient power conversion systems demanding 600V operation and tight timing precision.

FAQ

What is the maximum allowable dV/dt at the VS pin?

The DGD21904MS14-13 is rated for 50 V/ns transient dVS/dt at the VS pin, verified under high-side bootstrap operation. This specification ensures reliable high-side driver operation even during fast-switching events in 600V-class half-bridges, preventing false turn-on due to capacitive coupling.

Can HIN and LIN be driven independently for non-complementary operation?

Yes-HIN and LIN are fully independent logic inputs with separate Schmitt triggers and internal pull-downs. They can be driven asynchronously to enable three-state operation, phase-shifted control, or single-ended configurations without cross-conduction risk, provided external dead-time management is implemented.

Is an external bootstrap diode required?

No external bootstrap diode is required-the DGD21904MS14-13 is designed for standard bootstrap operation using an external capacitor and diode. The IC itself does not integrate the diode; however, its VB pin is optimized for typical 1N4148 or equivalent fast-recovery diodes in conjunction with 0.1 µF ceramic bootstrap capacitors.

Does the device support 3.3V-only microcontroller interfaces without level shifting?

Yes-the HIN and LIN inputs accept 3.3V logic directly: VIH(min) = 2.5 V at VCC = 10–20 V, and input thresholds are internally set to ensure clean switching at 3.3V CMOS levels. No external level shifter is needed when interfacing with 3.3V MCUs or FPGAs.