Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DGD2190MS8-13

Part No.:
DGD2190MS8-13
Manufacturer:
Diodes Incorporated
Category:
Gate Drivers
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixDGD2190MS8-13.pdf
Description:
IC GATE DRV HALF-BRIDGE 8SO 2.5K
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,622

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DGD2190MS8-13 from Diodes Incorporated is a high-voltage, high-speed dual-channel gate driver IC for half-bridge N-channel MOSFET/IGBT configurations, featuring 600V high-side floating capability, 4.5A typical sink/source output current, and TTL/CMOS-compatible 3.3V logic inputs. It operates across –40°C to +125°C and is used in DC-DC converters, motor controls, and Class D amplifiers where robust bootstrap-based high-side switching is required.

For engineers reviewing the DGD2190MS8-13 datasheet, DGD2190MS8-13 pinout, DGD2190MS8-13 application, or DGD2190MS8-13 equivalent, key selection criteria include high dV/dt immunity (50 V/ns), matched propagation delays (≤50 ns), undervoltage lockout thresholds (7.6–9.8 V), and SO-8 thermal performance (RθJA = 200 °C/W).

Technical Context

The DGD2190MS8-13 integrates independent high-side and low-side drivers with isolated floating supply (VB/VS) architecture enabling 600V bootstrap operation. Its Schmitt-triggered HIN/LIN inputs provide noise immunity, while internal UVLO circuits protect both channels at separate 7.6–9.8 V thresholds with 0.6 V hysteresis.

AC timing is tightly controlled: tON/tOFF typ. 140 ns (VS = 0 V), rise/fall times of 25–50 ns and 20–45 ns respectively, and delay matching ≤50 ns between HO and LO outputs - critical for minimizing shoot-through in high-frequency half-bridge switching.

Key Specifications

Parameter Value and Actual Design Meaning
High-Side Voltage Rating 600 V max VS offset - enables use in 400 V DC bus systems with margin
Output Drive Current 4.5 A typ. sink/source - supports fast turn-on/off of high-Qg MOSFETs
Logic Input Compatibility 3.3 V–5 V TTL/CMOS - interfaces directly with microcontrollers and PWM controllers
Propagation Delay Match ≤50 ns difference between HO/LO - reduces dead-time uncertainty in gate timing
UVLO Thresholds VCC/VBS UV+ = 7.6–9.8 V, hysteresis = 0.6 V - prevents erratic switching during brown-out
Operating Temperature –40°C to +125°C ambient - qualified for industrial and automotive under-hood environments
dV/dt Immunity 50 V/ns on VS node - maintains high-side functionality under fast transient conditions

Pinout & Package

Supplied in an SO-8 (Type TH) surface-mount package with matte tin-plated leads, moisture sensitivity level 3, and UL 94V-0 rated molding compound. Weight: 0.075 g.

Pin/Terminal Circuit Role Design Meaning
1 HIN High-side logic input In-phase control signal for HO; Schmitt-triggered, 3.3 V compatible
2 LIN Low-side logic input In-phase control signal for LO; Schmitt-triggered, internal pull-down
3 COM Low-side return reference Common ground for VCC, LO, and logic circuitry
4 LO Low-side gate drive output Drives N-MOSFET source-connected to COM; 4.5 A sink capability
5 VCC Fixed low-side supply 10–20 V bias for low-side driver and logic; includes UVLO
6 VS High-side floating return Reference for high-side driver; tracks source of high-side MOSFET
7 HO High-side gate drive output Drives N-MOSFET gate referenced to VS; 4.5 A source capability
8 VB High-side floating supply Bootstrap-supplied voltage up to 600 V above VS; powers high-side driver

Key Features

Feature Design Value
Floating high-side driver Supports 600 V bootstrap operation with 50 V/ns dV/dt immunity - eliminates need for isolated supplies
Matched HO/LO timing ≤50 ns delay mismatch ensures precise dead-time control and minimizes cross-conduction risk
Integrated UVLO protection Independent VCC and VB supply monitoring with hysteresis prevents malfunction during supply sag
Robust logic interface Schmitt-triggered HIN/LIN with internal pull-down enables reliable noise rejection in noisy power stages
Thermal reliability RθJA = 200 °C/W on JEDEC 2-layer FR-4 - supports continuous operation at full load in compact layouts

Applications

DC-DC Converters Motor Controls

Use Scenario: Isolated or non-isolated buck-boost and LLC resonant converters with 400 V input rails.

IC Role / Device Role / Timing Role: Half-bridge gate driver coordinating complementary switching of high- and low-side N-MOSFETs.

Use Value: 600 V high-side rating and 140 ns propagation delay enable >100 kHz switching with minimal dead-time penalty.

Use Scenario: Brushless DC (BLDC) and permanent magnet synchronous motor (PMSM) inverters in HVAC and industrial drives.

IC Role / Device Role / Timing Role: Gate driver for three-phase inverter half-bridges, synchronized via PWM signals from MCU.

Use Value: Matched HO/LO timing and 4.5 A drive strength reduce MOSFET switching losses and thermal stress.

AC-DC Power Supplies Class D Power Amplifiers

Use Scenario: Active clamp forward and PFC boost stages in server PSUs and telecom rectifiers.

IC Role / Device Role / Timing Role: High-efficiency gate driver for primary-side switching FETs operating at 65–100 kHz.

Use Value: Undervoltage lockout and -40°C to +125°C operation ensure stable startup and sustained performance under load transients.

Use Scenario: High-fidelity audio amplification with >500 kHz PWM carrier frequency and low THD+N.

IC Role / Device Role / Timing Role: Precision gate driver delivering fast, symmetric edge transitions to output MOSFETs.

Use Value: 25 ns rise / 20 ns fall time and <50 ns delay match preserve PWM fidelity and minimize switching distortion.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side/low-side gate driver applications.

Alternative Part Technical Difference Application Difference Selection Advice
IRS21844STRPBF Higher VBS UVLO threshold (10.1 V), slower tON/tOFF (210 ns typ.), SO-8 package Limited to lower dV/dt environments (<25 V/ns); less suitable for 600 V fast-switching topologies Prefer when system-level UVLO margin must exceed 10 V and timing precision is secondary
LM5109BMAX/NOPB Lower peak output current (1.5 A), no integrated Schmitt trigger, MSOP-8 package Requires external input conditioning; unsuitable for noisy motor drive environments without added filtering Choose only for cost-sensitive, low-power half-bridge designs with clean control signals

Compared with IRS21844STRPBF and LM5109BMAX/NOPB, the DGD2190MS8-13 delivers superior dV/dt immunity, tighter timing matching, and higher drive strength - making it optimal for high-reliability, high-frequency half-bridge systems requiring minimal external components.

Availability

DGD2190MS8-13 is available at Aetrix Electronics and suitable for DC-DC converters, motor controls, and Class D power amplifiers requiring stable component supply, extended temperature operation, and high-voltage gate drive integrity.

Supply support for DGD2190MS8-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance power management, signal integrity, and protection solutions.

The DGD2190MS8-13 belongs to Diodes' high-voltage gate driver product line, engineered specifically for robust half-bridge control in industrial power conversion and motor drive applications.

FAQ

What is the maximum allowable dV/dt on the VS pin?

The DGD2190MS8-13 is rated for 50 V/ns on the VS pin under transient conditions, verified per Absolute Maximum Ratings. This specification ensures reliable high-side operation during fast switching transitions in 400–600 V bus applications without false triggering or latch-up.

Does the device require external bootstrap diode and capacitor?

Yes - the DGD2190MS8-13 requires an external bootstrap diode and capacitor between VB and VS to generate the floating high-side supply. The datasheet specifies minimum capacitance (typically ≥0.1 µF ceramic) and recommends fast-recovery diodes with low reverse recovery charge.

Can HIN and LIN be driven independently for non-complementary operation?

Yes - HIN and LIN are fully independent logic inputs with internal pull-down resistors. They can be driven separately to implement three-state control, shoot-through prevention logic, or asymmetric PWM schemes without cross-talk or unintended conduction.

Is the SO-8 package thermally adequate for continuous 4.5 A output operation?

At 4.5 A peak, junction temperature rise depends on PCB layout: on a standard 2-layer JEDEC board, RθJA = 200 °C/W limits continuous dissipation to ~0.625 W. For sustained high-current operation, thermal vias under the exposed pad (if present) and copper pour are strongly recommended to reduce θJA below 100 °C/W.

DGD2190MS8-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Driven Configuration:
Half-Bridge
Channel Type:
Independent
Number of Drivers:
2
Gate Type:
IGBT, N-Channel MOSFET
Voltage - Supply:
10V ~ 20V
Logic Voltage - VIL, VIH:
0.8V, 2.5V
Current - Peak Output (Source, Sink):
4.5A, 4.5A
Input Type:
Non-Inverting
High Side Voltage - Max (Bootstrap):
600 V
Rise / Fall Time (Typ):
25ns, 20ns
Operating Temperature:
-40°C ~ 125°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO

DGD2190MS8-13 FAQ

1.How can I place an order for DGD2190MS8-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DGD2190MS8-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DGD2190MS8-13 reliable?

The price and inventory of DGD2190MS8-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DGD2190MS8-13 is usually 5 days.

3.What payment methods are accepted for DGD2190MS8-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DGD2190MS8-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DGD2190MS8-13?

DGD2190MS8-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DGD2190MS8-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DGD2190MS8-13?

For technical support, including DGD2190MS8-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DGD2190MS8-13 requirements.

6.How does Aetrix verify that DGD2190MS8-13 is sourced from the original manufacturer or authorized distributors?

All DGD2190MS8-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DGD2190MS8-13 meets industry standards.

7.What is the process for return or replacement of DGD2190MS8-13?

All DGD2190MS8-13 units undergo pre-shipment inspection (PSI). If there is an issue with DGD2190MS8-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DGD2190MS8-13 part is unused and in its original packaging.

Return procedure for DGD2190MS8-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DGD2190MS8-13 Tags

  • DGD2190MS8-13
  • DGD2190MS8-13 PDF
  • DGD2190MS8-13 Datasheet
  • DGD2190MS8-13 Specifications
  • DGD2190MS8-13 Images
  • Diodes Incorporated
  • Diodes Incorporated DGD2190MS8-13
  • Buy DGD2190MS8-13
  • DGD2190MS8-13 Price
  • DGD2190MS8-13 Distributor
  • DGD2190MS8-13 Supplier
  • DGD2190MS8-13 Wholesale
Related Products
ZXGD3009E6TA
ZXGD3009E6TA

Diodes Incorporated

1EDN7512BXTSA1
1EDN7512BXTSA1

Infineon Technologies

UCC27517DBVR
UCC27517DBVR

Texas Instruments

MCP1416T-E/OT
MCP1416T-E/OT

Microchip Technology

MCP1402T-E/OT
MCP1402T-E/OT

Microchip Technology

MCP1415T-E/OT
MCP1415T-E/OT

Microchip Technology

MCP1401T-E/OT
MCP1401T-E/OT

Microchip Technology

IX4428NTR
IX4428NTR

Littelfuse Inc.

IRS2005STRPBF
IRS2005STRPBF

Infineon Technologies

IRS2008STRPBF
IRS2008STRPBF

Infineon Technologies

IX4310TTR
IX4310TTR

Littelfuse Inc.

2EDN7524RXTMA1
2EDN7524RXTMA1

Infineon Technologies

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER