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Diodes Incorporated DGD2190S8-13
- Part No.:
- DGD2190S8-13
- Manufacturer:
- Diodes Incorporated
- Category:
- Gate Drivers
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
DGD2190S8-13.pdf
- Description:
- IC GATE DRVR HALF-BRIDGE 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:4,555
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Product details
Overview
DGD2190S8-13 from Diodes Incorporated is a high-voltage, high-speed half-bridge gate driver IC for n-channel MOSFETs and IGBTs in SO-8 (Type TH) package, featuring 4.5A sink/source output drive, 600V high-side bootstrap operation, and -40°C to +125°C operating range. It enables robust motor control and DC-AC inverter designs with TTL/CMOS-compatible 3.3V logic inputs and integrated undervoltage lockout.
For engineers reviewing the DGD2190S8-13 datasheet, DGD2190S8-13 pinout, DGD2190S8-13 application, or DGD2190S8-13 equivalent, key selection criteria include high-side dV/dt immunity (50 V/ns), matched propagation delays (≤50 ns), Schmitt-triggered inputs with internal pulldown, and dual UVLO thresholds for VCC and VB/VS rails.
Technical Context
The DGD2190S8-13 integrates independent high-side and low-side drivers with floating high-side architecture supporting bootstrap operation up to 600V VS offset. Its logic inputs accept 0–5V signals with Schmitt-trigger hysteresis and internal pulldown, ensuring noise immunity in noisy power stages.
Each output stage delivers typ. 4.5A peak sink/source current with <50ns rise/fall times (CL = 1000pF) and propagation delay matching ≤50ns between HO and LO. Undervoltage lockout activates separately on VCC (7.6–9.8V threshold) and VB/VS (same threshold range), preventing shoot-through during supply brownout.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Output Drive Current | 4.5A sink/source typical - enables fast switching of high-Qg MOSFETs in high-frequency half-bridge topologies |
| High-Side Voltage Rating | 600V VS offset - supports industrial and automotive inverters operating up to 400V DC bus with margin |
| Propagation Delay Matching | ≤50ns between HO/LO - minimizes dead-time uncertainty and reduces risk of cross-conduction |
| Logic Input Compatibility | 3.3V–5V TTL/CMOS - allows direct interface with microcontrollers, DSPs, and PWM controllers without level-shifting |
| UVLO Threshold Hysteresis | 0.6V - provides stable turn-on/turn-off behavior during supply transients in unregulated gate-drive supplies |
| Thermal Resistance θJA | 200°C/W - defines maximum power dissipation (0.625W) on standard 2-layer FR-4 PCB without heatsink |
| dV/dt Immunity | 50 V/ns - ensures reliable high-side floating operation under fast-switching conditions in hard-switched converters |
Pinout & Package
Package: SO-8 (Type TH), surface-mount, lead-free, RoHS-compliant molded plastic with matte tin-plated leads and UL 94V-0 flammability rating.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 HIN | High-side logic input | In-phase control signal for HO; Schmitt-triggered with internal pulldown for noise immunity |
| 2 LIN | Low-side logic input | In-phase control signal for LO; identical electrical characteristics to HIN |
| 3 COM | Low-side return reference | Common ground for VCC, LO, and logic circuitry; must be low-inductance connection to power ground |
| 4 LO | Low-side gate drive output | Source/sink driver referenced to COM; drives N-MOSFET gate directly |
| 5 VCC | Fixed low-side supply | 10–20V bias rail powering low-side driver and logic; monitored by dedicated UVLO |
| 6 VS | High-side floating supply return | Reference node for high-side driver; swings with half-bridge source; critical for bootstrap stability |
| 7 HO | High-side gate drive output | Source/sink driver referenced to VS; drives high-side N-MOSFET gate in floating configuration |
| 8 VB | High-side floating supply | Bootstrap capacitor voltage node; must be ≥10V above VS to enable high-side conduction |
Key Features
| Feature | Design Value |
|---|---|
| Floating high-side driver | Supports 600V VS offset in bootstrap mode - eliminates need for isolated supplies in cost-sensitive half-bridge designs |
| Matched HO/LO timing | ≤50ns delay mismatch - simplifies dead-time programming and improves efficiency in synchronous rectification |
| Dual independent UVLO | Separate monitoring of VCC and VB/VS rails - prevents erratic switching during partial supply faults |
| Schmitt-trigger inputs | Hysteresis >1.7V at 5V VCC - rejects EMI-induced glitches on HIN/LIN lines in high-noise motor drive environments |
| High pulse-current capability | 4.5A peak sink/source - reduces external gate resistor requirements and enables <100ns switching transitions |
Applications
| Motor Control Systems | DC-AC Inverters |
|---|---|
|
Use Scenario: Brushless DC (BLDC) motor drives in HVAC blowers and industrial pumps requiring 20–50 kHz PWM switching. IC Role / Device Role / Timing Role: Half-bridge gate driver coordinating complementary high-side/low-side MOSFET switching with precise dead-time control. Use Value: 4.5A drive strength and matched propagation delays reduce MOSFET switching losses and thermal stress in continuous-duty applications. |
Use Scenario: Single-phase solar microinverters converting 30–60V DC input to 230V AC output at 50/60 Hz with high-frequency modulation. IC Role / Device Role / Timing Role: High-voltage half-bridge driver enabling efficient transformerless inverter topologies with 600V VS capability. Use Value: 50 V/ns dV/dt immunity ensures reliable high-side operation during rapid bus voltage transitions in grid-tied systems. |
| Industrial DC-DC Converters | Class D Audio Amplifiers |
|
Use Scenario: Isolated 48V-to-12V telecom DC-DC modules using active clamp forward or LLC resonant topologies. IC Role / Device Role / Timing Role: Synchronized gate driver for primary-side half-bridge switches operating at 200–500 kHz with tight timing control. Use Value: Dual UVLO prevents shoot-through during input voltage dips common in distributed power architectures. |
Use Scenario: High-fidelity 100W+ Class D amplifiers for professional audio requiring low THD+N and wide bandwidth. IC Role / Device Role / Timing Role: Low-propagation-delay driver minimizing PWM timing skew between high/low-side outputs in full-bridge output stage. Use Value: ≤50ns HO/LO delay matching preserves pulse fidelity and suppresses even-order harmonics in audio band. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar half-bridge gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRS21844STRPBF | Higher VBS max (625V), but lower peak output current (2.5A); no integrated Schmitt triggers on inputs | Requires external hysteresis for noise immunity; better suited for lower-power, higher-voltage flyback or PFC stages | Select when 625V margin is critical and gate charge is ≤30nC; avoid for high-Qg MOSFETs needing >3A drive |
| DGD2190M | Direct replacement with identical pinout, same specs, but updated qualification (AEC-Q100 Grade 1 capable) | Qualified for automotive under-hood applications; same industrial use cases with enhanced reliability documentation | Preferred for new designs requiring PPAP support or IATF 16949 traceability; drop-in compatible with DGD2190S8-13 layout |
Compared with IRS21844STRPBF and DGD2190M, the DGD2190S8-13 offers superior drive strength for high-Qg devices and built-in noise immunity, while DGD2190M provides automotive-grade assurance without sacrificing performance - making it the recommended upgrade path for production continuity.
Availability
DGD2190S8-13 is available at Aetrix Electronics and suitable for motor controls, DC-AC inverters, and industrial DC-DC converters requiring stable component supply despite its obsolete status - inventory is managed for legacy design support and end-of-life transition planning.
Supply support for DGD2190S8-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance power management, signal integrity, and connectivity solutions for industrial, computing, and consumer markets.
The DGD2190 belongs to Diodes' high-voltage gate driver product line, engineered specifically for robust half-bridge control in demanding power conversion systems where reliability under high dV/dt and wide temperature ranges is essential.
FAQ
Is DGD2190S8-13 still in production?
No - Diodes Incorporated has officially discontinued the DGD2190S8-13 and marked it obsolete. It remains available through authorized distributors like Aetrix Electronics for legacy system support and last-time buys, but no new manufacturing runs are planned. Customers are advised to migrate to the pin-compatible DGD2190M for ongoing production.
What is the maximum recommended bootstrap capacitor value for DGD2190S8-13?
The datasheet does not specify an absolute maximum, but practical design guidelines recommend 0.1 µF to 1 µF ceramic capacitors rated ≥25V. Larger values improve hold-up time but increase charging time and may degrade high-frequency response; 0.22 µF X7R is commonly used for 20–100 kHz switching with 600V bus.
Can DGD2190S8-13 drive SiC MOSFETs?
Yes - its 4.5A peak output current, <50ns rise/fall times, and 50 V/ns dV/dt immunity make it suitable for driving low-to-mid Qg SiC MOSFETs (e.g., <50nC total gate charge) in hard-switched half-bridge configurations up to 100 kHz, provided gate resistors are optimized to limit dv/dt and overshoot.
Does DGD2190S8-13 require external bootstrap diode protection?
Yes - although the IC tolerates reverse recovery stress, a fast-recovery or Schottky bootstrap diode (e.g., 1N4148WS or PMEG4010AEB) rated ≥600V PIV and ≥100mA average current is required to prevent VB discharge through the internal high-side driver during VS swing, especially under high-duty-cycle operation.
DGD2190S8-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Driven Configuration:
- Half-Bridge
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- IGBT, N-Channel MOSFET
- Voltage - Supply:
- 10V ~ 20V
- Logic Voltage - VIL, VIH:
- 0.8V, 2.5V
- Current - Peak Output (Source, Sink):
- 4.5A, 4.5A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- 600 V
- Rise / Fall Time (Typ):
- 25ns, 20ns
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
DGD2190S8-13 FAQ
1.How can I place an order for DGD2190S8-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DGD2190S8-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DGD2190S8-13 reliable?
The price and inventory of DGD2190S8-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DGD2190S8-13 is usually 5 days.
3.What payment methods are accepted for DGD2190S8-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DGD2190S8-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DGD2190S8-13?
DGD2190S8-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DGD2190S8-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DGD2190S8-13?
For technical support, including DGD2190S8-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DGD2190S8-13 requirements.
6.How does Aetrix verify that DGD2190S8-13 is sourced from the original manufacturer or authorized distributors?
All DGD2190S8-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DGD2190S8-13 meets industry standards.
7.What is the process for return or replacement of DGD2190S8-13?
All DGD2190S8-13 units undergo pre-shipment inspection (PSI). If there is an issue with DGD2190S8-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DGD2190S8-13 part is unused and in its original packaging.
Return procedure for DGD2190S8-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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