Diodes Incorporated DGD2304S8-13

Overview

DGD2304S8-13 from Diodes Incorporated is a high-voltage, high-speed half-bridge gate driver IC designed to control two N-channel MOSFETs or IGBTs in switching power topologies. It features 600V high-side bootstrap operation, 290mA source / 600mA sink output drive strength, and an internal 100ns deadtime to prevent shoot-through. It operates across –40°C to +125°C and interfaces with 3.3V–5V TTL/CMOS logic in DC-DC converters and motor controls.

For engineers reviewing the DGD2304S8-13 datasheet, DGD2304S8-13 pinout, DGD2304S8-13 application, or DGD2304S8-13 equivalent, key selection criteria include high-side floating voltage capability (600V), output current asymmetry (290mA/600mA), integrated deadtime, undervoltage lockout thresholds (7.0–9.7V), and SO-8 thermal resistance (55°C/W).

Technical Context

The DGD2304S8-13 integrates independent high-side and low-side drivers with separate supply domains: VB/VS for the floating high-side stage and VCC/COM for logic and low-side. Its internal logic includes Schmitt-triggered HIN/LIN inputs with pull-downs and synchronized deadtime generation to enforce minimum off-time between HO and LO transitions.

It implements dual undervoltage lockout (UVLO) circuits - one for VCC (7.0–9.7V thresholds) and one for the bootstrap supply VBS (identical thresholds) - ensuring both driver sections remain disabled until stable bias is established. The 50V/ns dVS/dt immunity supports robust operation in fast-switching bridge configurations.

Key Specifications

Pinout & Package

Supplied in a standard SO-8 package (5.0 × 6.0 mm body, 1.27 mm pitch), the DGD2304S8-13 uses surface-mount construction with matte tin-plated leads and meets JEDEC MS-012AC. Moisture sensitivity level is J-STD-020 Level 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge gate driver applications.

Compared with IR2104PbF and UCC27211DR, the DGD2304S8-13 uniquely combines 600V bootstrap capability, integrated deadtime, and 3.3V logic compatibility in SO-8 - simplifying high-voltage half-bridge designs where isolated supplies are impractical.

Availability

DGD2304S8-13 is available at Aetrix Electronics and suitable for DC-DC converters, motor controls, and AC-DC power supplies requiring stable component supply, extended temperature operation, and high-voltage gate drive integrity.

Supply support for DGD2304S8-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions.

The DGD2304 belongs to Diodes' high-voltage gate driver product line, engineered for efficiency-critical switching applications including industrial power conversion, motor drives, and renewable energy inverters.

FAQ

What is the maximum allowable dVS/dt for reliable high-side operation?

The DGD2304S8-13 specifies a maximum dVS/dt of 50 V/ns under recommended operating conditions. Exceeding this rate risks false triggering of the high-side level shifter or premature UVLO activation. Layout practices - including minimized VS loop inductance and local ceramic decoupling at VB/VS - are essential to maintain immunity at this limit.

Can LIN and HIN be driven by independent PWM signals?

Yes - LIN and HIN accept independent logic inputs and drive LO and HO asynchronously. However, the internal deadtime only applies when both inputs transition in complementary fashion; independent control bypasses hardware deadtime, requiring external timing coordination to avoid shoot-through in half-bridge configurations.

What bootstrap capacitor value is recommended for 100kHz operation?

For 100kHz switching with 50% duty cycle and 2A gate charge (Qg), a 0.1µF X7R ceramic capacitor rated ≥25V is recommended. This ensures <1V droop across the bootstrap capacitor per cycle while maintaining low ESR. Larger values (e.g., 0.22µF) improve margin under high-duty-cycle or high-Qg conditions.

Does the DGD2304S8-13 support 3.3V-only operation without level shifting?

Yes - the HIN and LIN inputs operate down to 3.3V logic levels with guaranteed VIH ≥2.3V and VIL ≤0.7V at VCC = 10–20V. No external level shifter is needed when interfacing with 3.3V microcontrollers or FPGA I/O banks, provided VCC is maintained within its 10–20V range.