Diodes Incorporated DM8W10AQ-13

Overview

DM8W10AQ-13 from Diodes Incorporated is a surface-mount transient voltage suppressor (TVS) diode designed for automotive load-dump and surge protection in high-reliability 12V/24V systems. It delivers 6600W peak pulse power (10/1000µs), 10V reverse standoff voltage (VRWM), 17.0V clamping voltage at 388A, and operates from –55°C to +175°C - meeting ISO16750-2 Pulse A/B and ISO7637-2 Pulse 1/2a/3a/3b requirements in engine control units and body electronics.

For engineers reviewing the DM8W10AQ-13 datasheet, DM8W10AQ-13 pinout, DM8W10AQ-13 application, or DM8W10AQ-13 equivalent, key selection criteria include its DO-218 (Type E) package thermal resistance (RθJC = 0.9°C/W), AEC-Q101 qualification, IATF 16949 manufacturing, and verified 700A IFSM surge capability under 8.3ms half-sine waveform.

Technical Context

This unidirectional TVS diode uses glass-passivated silicon die construction with anode-connected heatsink configuration, enabling robust thermal dissipation in high-power transient events. Its 10V VRWM and 11.1–12.3V VBR range ensure precise clamping onset for 12V automotive bus protection without false triggering during normal operation.

The device's 0.9°C/W junction-to-case thermal resistance and 8W steady-state power rating support sustained operation at elevated ambient temperatures up to +175°C. Its 10/1000µs waveform response and 388A peak pulse current (Ipp) are validated per ISO16750-2 load-dump test conditions, with low 15µA leakage at VRWM and 250µA at TJ = +175°C.

Key Specifications

Pinout & Package

Package: DO-218 (Type E), molded plastic case (UL 94V-0), 2.74g weight, lead-free matte tin plating, polarity indicated by cathode bar and anode circle; heatsink terminal is electrically connected to anode.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Compared with SMBJ10A and SMCJ10A, DM8W10AQ-13 provides 4.4× and 4.4× higher peak power respectively, coupled with superior thermal resistance and AEC-Q101 certification - making it the only viable option for primary load-dump protection in safety-critical automotive ECUs.

Availability

DM8W10AQ-13 is available at Aetrix Electronics and suitable for engine control units, body control modules, ADAS sensors, and electric power steering systems requiring stable component supply across extended automotive product lifecycles.

Supply support for DM8W10AQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions for automotive, industrial, and consumer markets, with design centers across Asia, Europe, and the US.

The DM8WxxAQ series belongs to Diodes' AEC-Q101-qualified automotive TVS portfolio, engineered specifically for high-energy load-dump and ISO7637-2 surge immunity in 12V/24V vehicle electrical architectures.

FAQ

What is the maximum clamping voltage of DM8W10AQ-13 at rated peak pulse current?

The DM8W10AQ-13 has a maximum clamping voltage (VC) of 17.0V when subjected to its rated peak pulse current of 388A under the 10/1000µs waveform. This value is measured per JEDEC standards and guarantees downstream circuit protection below the 20V absolute maximum rating of most automotive-grade power management ICs.

Is DM8W10AQ-13 compatible with lead-free reflow soldering processes?

Yes, DM8W10AQ-13 features matte tin lead-free plating and is qualified for standard Pb-free reflow profiles per J-STD-020. Its DO-218 package withstands peak temperatures up to 260°C for 30 seconds, and the device meets IPC-A-610 Class 3 acceptance criteria for automotive assembly.

How does the DO-218 (Type E) package improve thermal performance over SMB or SMC packages?

The DO-218 (Type E) package provides a direct thermal path from the silicon die to the anode heatsink terminal, achieving RθJC = 0.9°C/W - 2.8× lower than SMBJ10A (2.5°C/W) and 1.7× lower than SMCJ10A (1.5°C/W). This allows sustained 8W power dissipation at TC = +25°C and extends safe operating area under high-temperature under-hood conditions.

Does DM8W10AQ-13 meet both ISO16750-2 and ISO7637-2 standards simultaneously?

Yes, DM8W10AQ-13 is explicitly validated for ISO16750-2 Pulse A (load dump) and Pulse B (battery reversal), as well as ISO7637-2 Pulse 1 (inductive switch-off), Pulse 2a (supply interruption), and Pulses 3a/3b (capacitive coupling). Test data confirming compliance is published in Diodes' DS41002 Rev. 7 datasheet, pages 1–2.