Diodes Incorporated DMMT32N45CV-7
- Part No.:
- DMMT32N45CV-7
- Manufacturer:
- Diodes Incorporated
- Category:
- Bipolar Transistor Arrays
- Package:
- SOT-563, SOT-666
- Datasheet:
-
DMMT32N45CV-7.pdf
- Description:
- TRANS 2NPN 45V 100MA SOT-563
- Quantity:
- Payment:

- Shipping:

Inventory:8,954
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Product details
Overview
DMMT32N45CV-7 from Diodes Incorporated is a matched NPN bipolar transistor pair in a single SOT563 package, rated for 45V VCEO, 100mA IC, and featuring hFE matching ≤5% and VBE(on) matching ≤2mV at 2mA - designed for precision current mirroring and differential amplification in space-constrained automotive and industrial signal conditioning circuits.
For engineers reviewing the DMMT32N45CV-7 datasheet, DMMT32N45CV-7 pinout, DMMT32N45CV-7 application, or DMMT32N45CV-7 equivalent, key selection criteria include dual-transistor matching tolerance, thermal derating on 1oz FR-4 PCB, SOT563 footprint compatibility, and AEC-Q101 qualification readiness for automotive-grade analog front-ends.
Technical Context
This device integrates two electrically isolated NPN transistors on a single die within a thermally coupled SOT563 package, enabling tightly matched DC parameters (hFE, VBE) critical for high-accuracy current mirrors and emitter-coupled logic stages. Its 470°C/W RθJA reflects thermal performance under standard 1oz copper layout conditions.
The matched pair supports operation across –55°C to +150°C with 4000V HBM ESD rating and exhibits fT = 100–300MHz, supporting RF biasing and fast-switching applications up to ~100MHz where gain consistency between devices is essential.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 45V - Maximum collector-emitter voltage before breakdown; defines safe operating range in low-voltage switching and linear amplifier stages. |
| IC | 100mA continuous - Sets upper limit for load current handling per transistor in mirrored bias networks or active loads. |
| hFE Matching | ≤5% (hFE1/hFE2 ≥ 0.95) - Enables <0.1% current error in precision mirror configurations at 2mA bias. |
| VBE Matching | ≤2mV difference - Ensures sub-0.3% offset in differential pair inputs and improves common-mode rejection in op-amp input stages. |
| fT | 100–300MHz - Supports stable small-signal amplification and bias control in HF analog front-ends up to UHF band edges. |
| RθJA | 470°C/W - Specifies thermal resistance on minimal 1oz FR-4 pad; requires careful layout for >150mW power dissipation. |
| ESD HBM | 4000V - Confirms robustness against human-body discharge during board assembly and handling in production environments. |
Pinout & Package
Package: SOT563 - ultra-compact 6-pin surface-mount package with 0.5mm pitch, 1.6mm × 1.6mm footprint, and 0.6mm max height; optimized for high-density automotive PCBs and portable instrumentation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (C1) | Collector of Transistor 1 | Primary output node for first transistor; routed to load or next stage in current mirror or amplifier configuration. |
| 2 (E1) | Emitter of Transistor 1 | Reference terminal for T1; often tied to ground or current-sense resistor in mirror topologies. |
| 3 (B1) | Base of Transistor 1 | Control input for T1; used for bias setting or feedback injection in matched-pair feedback loops. |
| 4 (B2) | Base of Transistor 2 | Independent control input for T2; enables differential base drive or independent bias adjustment. |
| 5 (E2) | Emitter of Transistor 2 | Reference terminal for T2; may be connected to shared emitter node or separate sensing path. |
| 6 (C2) | Collector of Transistor 2 | Output node for second transistor; forms complementary output in differential pairs or mirrored current source. |
Key Features
| Feature | Design Value |
|---|---|
| Matched hFE and VBE | Guarantees ≤5% current gain ratio and ≤2mV base-emitter voltage difference at 2mA, reducing calibration overhead in precision analog ICs. |
| SOT563 ultra-small footprint | 1.6mm × 1.6mm outline with 0.5mm pitch enables placement in tight spaces such as automotive sensor modules and portable medical monitors. |
| AEC-Q101 readiness | Manufactured in IATF 16949-certified facilities with PPAP capability; supports qualification for automotive signal conditioning and body electronics. |
| Lead-free & halogen-free | Meets RoHS 3 (2015/863/EU) and "Green" definition (<900ppm Br/Cl, <1000ppm Sb); compliant with global environmental manufacturing requirements. |
Applications
| Current Mirror Biasing | Differential Amplifier Input Stage |
|---|---|
|
Use Scenario: Generating stable, temperature-compensated reference currents in analog sensor interfaces for automotive pressure or temperature sensors. IC Role / Device Role / Timing Role: Dual NPN transistor pair providing matched current replication with <0.1% error across –40°C to +125°C. Use Value: Eliminates need for external trimming resistors and reduces BOM count by integrating matched devices in one footprint. |
Use Scenario: Front-end amplification of low-level signals from MEMS accelerometers in ADAS collision detection systems. IC Role / Device Role / Timing Role: Matched pair serving as emitter-coupled differential input stage to reject common-mode noise and improve SNR. Use Value: ≤2mV VBE mismatch ensures <0.02% input offset drift, preserving resolution in 16-bit ADC signal chains. |
| Active Load for Op-Amp Outputs | High-Speed Switching in Logic Interface |
|
Use Scenario: Replacing resistive loads in rail-to-rail op-amp output stages to increase slew rate and reduce quiescent power in battery-powered IoT nodes. IC Role / Device Role / Timing Role: One transistor acts as programmable active load while the other provides feedback-controlled current sourcing. Use Value: 300MHz fT supports >10MHz small-signal bandwidth, enabling fast settling in closed-loop sensor buffers. |
Use Scenario: Level-shifting and signal inversion between 3.3V microcontrollers and 5V legacy CAN transceivers in vehicle gateway ECUs. IC Role / Device Role / Timing Role: Dual NPN configured as complementary switch pair for fast edge generation and rail-compatible logic translation. Use Value: 51ns fall time and 4.8ns rise time ensure clean transitions at 10Mbps data rates without added gate drivers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar matched NPN transistor pair applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ZXTDM3205ZTA | Higher VCEO (60V), lower hFE matching (±10%), SOT-363 package (larger footprint, 2.1mm × 2.0mm) | Preferred for higher-voltage industrial PLC I/O modules where matching tolerance is secondary to breakdown margin | Select when >45V headroom is required and PCB area allows larger package; not drop-in due to pinout and size differences |
| MBT3904DW1T1G | Same SOT-363 package, no guaranteed hFE or VBE matching; typical hFE spread ±20% | Suitable for non-critical biasing in consumer audio amplifiers where cost dominates over precision | Choose only for cost-sensitive, non-automotive designs where matching is not required; lacks AEC-Q101 support |
Compared with ZXTDM3205ZTA and MBT3904DW1T1G, DMMT32N45CV-7 uniquely delivers ≤5% hFE matching and ≤2mV VBE matching in the smallest available footprint (SOT563), making it the only option for space-constrained automotive analog circuits requiring both precision and miniaturization.
Availability
DMMT32N45CV-7 is available at Aetrix Electronics and suitable for automotive sensor signal conditioning, industrial current monitoring, and portable medical instrumentation requiring stable component supply with traceable sourcing and long-term lifecycle support.
Supply support for DMMT32N45CV-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets with ISO/TS 16949 and IATF 16949 certified operations.
This device belongs to Diodes' precision-matched transistor family, engineered specifically for analog signal integrity in automotive-grade sensor interfaces and industrial control systems where parameter tracking across temperature and process variation is critical.
FAQ
Is DMMT32N45CV-7 qualified to AEC-Q101?
No, DMMT32N45CV-7 is not formally AEC-Q101 qualified, but it is manufactured in IATF 16949-certified facilities and supports PPAP documentation. Customers requiring full qualification must engage Diodes' automotive team for custom qualification testing and change control processes.
What is the maximum power dissipation per transistor at 85°C ambient?
At TA = 85°C, the derated power dissipation is 135mW per transistor, calculated using the 470°C/W RθJA and 150°C maximum junction temperature: PD = (150 − 85) / 470 ≈ 0.138W. This assumes standard 1oz FR-4 layout with minimum recommended pads.
Can DMMT32N45CV-7 be used in linear amplifier configurations?
Yes - its 45V VCEO, 100mA IC, and 100–300MHz fT support Class-A and Class-AB small-signal amplification up to ~50MHz. However, thermal derating must be applied above 25°C ambient, and VCE should remain below 30V for optimal linearity per SOA curves.
Does the SOT563 package support automated optical inspection (AOI)?
Yes - the SOT563's 0.5mm lead pitch, coplanar terminals, and matte tin finish are compatible with standard AOI systems used in automotive electronics manufacturing. The top-view marking "2V2" and date code provide unambiguous identification for traceability verification.
DMMT32N45CV-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- 2 NPN (Matched Pair)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 45V
- Vce Saturation (Max) @ Ib, Ic:
- 400mV @ 5mA, 100mA
- Current - Collector Cutoff (Max):
- 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 2mA, 5V
- Power - Max:
- 265mW
- Frequency - Transition:
- 300MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-563
DMMT32N45CV-7 FAQ
1.How can I place an order for DMMT32N45CV-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMMT32N45CV-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMMT32N45CV-7 reliable?
The price and inventory of DMMT32N45CV-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMMT32N45CV-7 is usually 5 days.
3.What payment methods are accepted for DMMT32N45CV-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMMT32N45CV-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMMT32N45CV-7?
DMMT32N45CV-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMMT32N45CV-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMMT32N45CV-7?
For technical support, including DMMT32N45CV-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMMT32N45CV-7 requirements.
6.How does Aetrix verify that DMMT32N45CV-7 is sourced from the original manufacturer or authorized distributors?
All DMMT32N45CV-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMMT32N45CV-7 meets industry standards.
7.What is the process for return or replacement of DMMT32N45CV-7?
All DMMT32N45CV-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMMT32N45CV-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMMT32N45CV-7 part is unused and in its original packaging.
Return procedure for DMMT32N45CV-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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