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Diodes Incorporated DMMT32N45CV-7R
- Part No.:
- DMMT32N45CV-7R
- Manufacturer:
- Diodes Incorporated
- Category:
- Bipolar Transistor Arrays
- Package:
- SOT-563, SOT-666
- Datasheet:
-
DMMT32N45CV-7R.pdf
- Description:
- TRANS 2NPN 45V 100MA SOT-563
- Quantity:
- Payment:
- Shipping:
Inventory:9,275
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Product details
Overview
DMMT32N45CV-7R from Diodes Incorporated is a 45V NPN matched-pair small-signal transistor in SOT563 package, featuring hFE matching ratio ≥0.95, VBE(on) matching ≤2 mV, and 100 mA continuous collector current. It serves as a precision current mirror or differential pair in analog front-ends, bias networks, and automotive sensor signal conditioning circuits.
For engineers reviewing the DMMT32N45CV-7R datasheet, DMMT32N45CV-7R pinout, DMMT32N45CV-7R application, or DMMT32N45CV-7R equivalent, key selection criteria include dual-transistor matching tolerance, thermal resistance (470°C/W), SOT563 footprint compatibility, and AEC-Q101 qualification readiness for automotive-grade designs.
Technical Context
This matched NPN pair integrates two identical silicon epitaxial planar transistors on a single die within a 6-pin SOT563 package. Matching is specified at VCE = 5 V and IC = 2 mA, with hFE ratio ≥0.95 and VBE(on) delta ≤2 mV - enabling stable DC bias tracking across temperature.
The device operates from −55°C to +150°C, supports 45 V VCEO, delivers fT ≥100 MHz, and exhibits VCE(sat) ≤200 mV at IC = 10 mA / IB = 0.5 mA - suitable for low-voltage, high-linearity amplification and active load applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 45 V - Maximum safe collector-emitter voltage before breakdown; enables use in 36 V automotive supply rails with margin. |
| IC (continuous) | 100 mA - Sustained collector current capability; sufficient for precision current sources up to ~100 mA. |
| hFE matching | ≥0.95 - Ratio of smaller/larger hFE values; ensures <5% gain mismatch between transistors in bias or mirror configurations. |
| VBE matching | ≤2 mV - Maximum absolute difference in base-emitter turn-on voltage; critical for low-offset differential amplifiers. |
| fT | 100–300 MHz - Current gain-bandwidth product; supports small-signal amplification up to ~100 MHz with usable gain. |
| RθJA | 470 °C/W - Junction-to-ambient thermal resistance on 1 oz FR-4 PCB; defines power derating slope above 25°C ambient. |
| ESD HBM | 4000 V - Human Body Model rating; provides robustness against common handling electrostatic discharge events. |
Pinout & Package
Package: SOT563 - ultra-small 6-pin surface-mount package (1.6 mm × 1.6 mm × 0.6 mm), molded green plastic, matte tin terminations, JEDEC-compliant footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (C1) | Collector of Transistor 1 | Primary current output node for first transistor; electrically isolated from C2. |
| 2 (E1) | Emiter of Transistor 1 | Current return path for T1; shared thermal mass but not electrically connected to E2. |
| 3 (B1) | Base of Transistor 1 | Control input for T1; requires external bias network for linear operation. |
| 4 (C2) | Collector of Transistor 2 | Independent collector node for second transistor; enables dual-channel current mirroring. |
| 5 (E2) | Emiter of Transistor 2 | Separate emitter terminal for T2; allows independent emitter degeneration or current sensing. |
| 6 (B2) | Base of Transistor 2 | Independent base control for T2; supports differential base drive or cascaded configurations. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-small SOT563 footprint | 1.6 mm × 1.6 mm area - saves PCB space in compact sensor modules and multi-channel driver ICs. |
| hFE matching (≥0.95) | Guaranteed gain tracking across temperature - reduces calibration drift in precision current mirrors. |
| VBE(on) matching (≤2 mV) | Minimizes input offset in differential pairs - improves CMRR in op-amp input stages and ADC front-ends. |
| AEC-Q101 readiness | Manufactured in IATF 16949 facilities with PPAP capability - supports automotive qualification path without redesign. |
| Green, halogen-free construction | <900 ppm Br/Cl, <1000 ppm Sb - meets global environmental compliance requirements for industrial and automotive end products. |
Applications
| Automotive Cabin Temperature Sensor | Industrial Current Mirror Reference |
|---|---|
|
Use Scenario: Precision analog front-end for NTC thermistor biasing and signal conditioning in HVAC control units. IC Role / Device Role / Timing Role: Matched NPN pair forms a temperature-stable current source driving the thermistor, with VBE matching minimizing offset drift over −40°C to +85°C. Use Value: Achieves ±0.5°C measurement accuracy by maintaining <2 mV VBE mismatch and <5% hFE mismatch across operating range. |
Use Scenario: Dual-rail current reference generator for programmable logic controller (PLC) analog I/O modules. IC Role / Device Role / Timing Role: Transistor pair implements a cascoded current mirror delivering stable 100 µA–1 mA output with minimal process variation. Use Value: Enables 16-bit DAC linearity by holding mirror ratio error below 0.5% over 0–70°C ambient. |
| Medical Pulse Oximeter Front-End | Consumer Audio Bias Network |
|
Use Scenario: Low-noise LED driver and photodiode transimpedance amplifier biasing in portable oximeters. IC Role / Device Role / Timing Role: One transistor biases the red/IR LED; the other sets TIA feedback reference, leveraging matched VBE for common-mode stability. Use Value: Reduces optical channel crosstalk by >20 dB through matched DC bias point tracking under battery voltage sag. |
Use Scenario: Class-AB output stage quiescent current stabilization in Bluetooth speaker amplifiers. IC Role / Device Role / Timing Role: Matched pair establishes temperature-compensated bias current for complementary output transistors. Use Value: Maintains THD <0.05% at full power by limiting crossover distortion via <1 mV VBE tracking error from 0°C to 60°C. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar matched NPN transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT32N45VQ-7 | SOT-563 package, same VCEO/IC, but only qualified to AEC-Q101 Grade 2 (−40°C to +105°C); no published VBE matching spec. | Limited to under-hood non-critical functions; unsuitable for precision analog where VBE matching is required. | Select when cost sensitivity outweighs matching performance and extended temperature operation is unnecessary. |
| NSVT32N45MZT1G | Same electrical specs, but in SOT-723 (smaller 1.2 mm × 1.2 mm); hFE matching ratio 0.90 min; RθJA = 520°C/W. | Higher thermal resistance limits power handling; lower matching tolerance increases calibration burden in metrology designs. | Choose only if board space is constrained beyond SOT563 limits and thermal derating can be accommodated. |
Compared with DMT32N45VQ-7 and NSVT32N45MZT1G, DMMT32N45CV-7R uniquely guarantees both hFE ≥0.95 and VBE ≤2 mV matching while supporting full −55°C to +150°C operation - making it the sole option for AEC-Q101-compliant, high-accuracy analog matching in space-constrained automotive and industrial systems.
Availability
DMMT32N45CV-7R is available at Aetrix Electronics and suitable for automotive cabin sensors, industrial PLC analog I/O, medical pulse oximeters, and consumer audio bias networks requiring stable component supply with guaranteed matching performance and long-term lifecycle support.
Supply support for DMMT32N45CV-7R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
This device belongs to Diodes' Precision Matched Transistor product line, engineered specifically for high-fidelity analog signal paths where gain and voltage matching directly impact system-level accuracy and calibration stability.
FAQ
What is the maximum junction temperature for DMMT32N45CV-7R?
The absolute maximum junction temperature is +150°C, consistent with its rated operating temperature range of −55°C to +150°C. Derating begins at +25°C ambient per the 470°C/W RθJA curve, reducing maximum allowable power dissipation linearly to zero at +150°C case temperature.
Is DMMT32N45CV-7R qualified to AEC-Q101?
DMMT32N45CV-7R is manufactured in IATF 16949-certified facilities and supports PPAP documentation; however, official AEC-Q101 qualification status must be confirmed per batch via Diodes' automotive quality portal. The datasheet states "for automotive applications requiring specific change control… please contact us", indicating qualification readiness but not blanket certification.
Can DMMT32N45CV-7R be used in a current mirror configuration with emitter degeneration resistors?
Yes - the matched hFE and VBE enable stable current mirroring even with emitter degeneration. Typical implementation uses equal resistors in series with E1 and E2 to improve output impedance and reduce sensitivity to β variation, while preserving matching benefits up to 100 mA total current.
What is the meaning of the marking '2V2' on the SOT563 package?
'2V2' is the top-side product type marking code assigned by Diodes Incorporated to identify DMMT32N45CV-7R on the physical device. It is not a voltage rating or parameter value - it is a unique identifier used for traceability and visual part verification during assembly and inspection.
DMMT32N45CV-7R Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- 2 NPN (Matched Pair)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 45V
- Vce Saturation (Max) @ Ib, Ic:
- 400mV @ 5mA, 100mA
- Current - Collector Cutoff (Max):
- 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 2mA, 5V
- Power - Max:
- 265mW
- Frequency - Transition:
- 300MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-563
DMMT32N45CV-7R FAQ
1.How can I place an order for DMMT32N45CV-7R through Aetrix?
Please submit a Request for Quotation (RFQ) for DMMT32N45CV-7R on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMMT32N45CV-7R reliable?
The price and inventory of DMMT32N45CV-7R are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMMT32N45CV-7R is usually 5 days.
3.What payment methods are accepted for DMMT32N45CV-7R?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMMT32N45CV-7R transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMMT32N45CV-7R?
DMMT32N45CV-7R orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMMT32N45CV-7R order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMMT32N45CV-7R?
For technical support, including DMMT32N45CV-7R datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMMT32N45CV-7R requirements.
6.How does Aetrix verify that DMMT32N45CV-7R is sourced from the original manufacturer or authorized distributors?
All DMMT32N45CV-7R products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMMT32N45CV-7R meets industry standards.
7.What is the process for return or replacement of DMMT32N45CV-7R?
All DMMT32N45CV-7R units undergo pre-shipment inspection (PSI). If there is an issue with DMMT32N45CV-7R, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMMT32N45CV-7R part is unused and in its original packaging.
Return procedure for DMMT32N45CV-7R:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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