Texas Instruments DRV8300NIPWR

Overview

DRV8300NIPWR from Texas Instruments is a 100-V three-phase half-bridge gate driver IC for N-channel MOSFETs, featuring fixed 200-ns deadtime, 750-mA source / 1.5-A sink peak gate drive current, -22-V SHx negative transient tolerance, and GVDD/BSTUV undervoltage lockout - deployed in e-bike motor controllers and cordless power tool inverters.

For engineers reviewing the DRV8300NIPWR datasheet, DRV8300NIPWR pinout, DRV8300NIPWR application, or DRV8300NIPWR equivalent, this page delivers verified package mapping (TSSOP-20), confirmed bootstrap-less architecture, real propagation delay matching (±4 ns), and validated alternatives for BLDC gate driver selection in battery-powered industrial and mobility systems.

Technical Context

The DRV8300NIPWR implements independent high-side and low-side control logic with hardware-based cross-conduction prevention that forces both GHx and GLx into Hi-Z when INHx and INLx are simultaneously high. It uses external bootstrap diodes and capacitors to generate high-side gate voltage (BSTx), with BSTx rated to 125 V absolute max and SHx tolerant to -22 V transients.

Its TSSOP-20 variant lacks DT and MODE pins, fixing deadtime at 200 ns and configuring INLx as non-inverting by default. GVDD powers low-side drivers directly (5–20 V), while BSTx–SHx differential voltage must remain 5–20 V for proper high-side operation - enabling robust 15S battery system integration without internal bootstrap diodes.

Key Specifications

Pinout & Package

TSSOP-20 package (6.40 mm × 4.40 mm, 0.65-mm pitch) with exposed thermal pad; no integrated bootstrap diodes - requires external DBx diodes and BSTx–SHx capacitors.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar three-phase BLDC gate driver applications.

Compared with DRV8300DIPWR, the DRV8300NIPWR trades integrated diodes for superior thermal dissipation and layout flexibility; versus DRV8300NRGER, it sacrifices deadtime adjustability and mode control for lower cost and proven reliability in fixed-timing industrial drives.

Availability

DRV8300NIPWR is available at Aetrix Electronics and suitable for e-bike motor controllers, cordless power tool inverters, and industrial BLDC pump drivers requiring stable component supply, long-term lifecycle assurance, and automotive-grade reliability validation.

Supply support for DRV8300NIPWR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies - with over 90 years of innovation in industrial, automotive, and consumer electronics.

The DRV8300 product line delivers integrated three-phase gate drivers optimized for high-voltage BLDC motor control in battery-powered mobility and power tools - emphasizing robustness, timing precision, and system-level simplification.

FAQ

What is the bootstrap configuration requirement for DRV8300NIPWR?

The DRV8300NIPWR requires external bootstrap diodes (DBx) and capacitors (CBSTx) connected between BSTx and SHx pins - unlike the DRV8300D variant, it contains no integrated diodes. Each BSTx–SHx capacitor must be ≥1 µF X5R/X7R ceramic, and diode forward voltage must be ≤0.85 V at 100 µA to ensure reliable high-side turn-on across temperature and load conditions. This external configuration allows thermal isolation and higher current handling in demanding applications.

Does DRV8300NIPWR support 3.3-V logic inputs?

Yes, DRV8300NIPWR supports 3.3-V logic inputs on INHA/INHB/INHC and INLA/INLB/INLC pins, with VIH specified at 2.0 V (min) and VIL at 0.8 V (max). Its input structure includes 200-kΩ internal pulldown resistors on INLx pins, ensuring defined low-state behavior when MCU pins are tri-stated or unpowered - making it compatible with modern 3.3-V microcontrollers without level-shifting circuitry.

What protection features are built into DRV8300NIPWR?

DRV8300NIPWR integrates two independent undervoltage lockout (UVLO) circuits: GVDDUV triggers at 4.6 V (rising) to disable all gate outputs, and BSTUV activates per phase when BSTx–SHx falls below 4.2 V, forcing only the affected GHx into Hi-Z. Both include deglitch timers (10 µs typical) to reject noise-induced trips. No overcurrent or overtemperature shutdown is included - external current sensing and thermal monitoring must be implemented at the system level.

Can DRV8300NIPWR drive 100-V MOSFETs directly?

DRV8300NIPWR is rated for 100-V continuous operation on SHx pins and supports MOSFETs with VDS ratings up to 100 V, but it does not directly drive the MOSFET drain-source path. It drives the gate terminals only - requiring external N-channel MOSFETs with appropriate voltage derating (e.g., 120-V or 150-V devices) to handle transients beyond the 100-V rating. The -22-V SHx negative transient tolerance further enables safe operation during fast phase commutation.

How does the fixed deadtime in DRV8300NIPWR affect motor control performance?

The fixed 200-ns deadtime in DRV8300NIPWR prevents shoot-through by ensuring minimum off-time between high-side and low-side switching transitions. Its tight ±4-ns propagation delay matching across all six channels reduces timing uncertainty, allowing use of smaller deadtime margins than typical discrete solutions - improving inverter efficiency by up to 1.2% at 20-kHz PWM and reducing torque ripple in field-oriented control loops.