Texas Instruments DRV8300UDRGER

Overview

DRV8300UDRGER from Texas Instruments is a 100V three-phase half-bridge gate driver IC for N-channel MOSFETs, featuring integrated bootstrap diodes, 750mA source / 1.5A sink peak gate drive current, adjustable deadtime via DT pin, and robust -22V SHx transient tolerance. It enables compact, high-efficiency BLDC motor control in battery-powered e-mobility systems.

For engineers reviewing the DRV8300UDRGER datasheet, DRV8300UDRGER pinout, DRV8300UDRGER application, or DRV8300UDRGER equivalent, this page delivers verified package mapping (24-pin VQFN), validated pin functions, confirmed protection thresholds (BSTUV = 7.5–8.7V, GVDDUV = 8–8.6V), and real-world implementation constraints including bootstrap capacitor sizing and MODE pin polarity configuration.

Technical Context

The DRV8300UDRGER implements independent high-side/low-side control per phase with hardware-based cross-conduction prevention that forces both GHx and GLx into Hi-Z when INHx and INLx are simultaneously high. Its bootstrap architecture supports up to 125V absolute BSTx voltage and tolerates -22V transients on SHx pins, enabling direct use with 15S Li-ion battery stacks (up to ~63V nominal, 72V max).

Deadtime is programmable via external resistor on the DT pin (200–2000 ns range), while the MODE pin selects inverting or non-inverting GLx output polarity relative to INLx inputs-both features exclusive to the VQFN (RGE) package variant and absent in TSSOP versions.

Key Specifications

Pinout & Package

VQFN-24 (RGE) package with 4.0mm × 4.0mm body, 0.5mm pitch, and exposed thermal pad for enhanced power dissipation (RθJB = 26.5°C/W).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar three-phase gate driver applications.

Compared with DRV8301DIPWR and MP6542GDU-LF-P, the DRV8300UDRGER uniquely combines VQFN-packaged programmability (DT/MODE), 100V system compatibility, and discrete FET control-making it optimal for high-performance, thermally managed BLDC systems requiring design flexibility and long-term component availability.

Availability

DRV8300UDRGER is available at Aetrix Electronics and suitable for e-bikes, industrial servos, and cordless power tools requiring stable component supply across extended production lifecycles and varying battery voltage platforms.

Supply support for DRV8300UDRGER includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with decades of expertise in motor control ICs.

The DRV8300U product line is engineered for high-reliability three-phase BLDC/PMSM motor drives in battery-powered mobility and industrial automation, emphasizing robustness, integration, and layout efficiency.

FAQ

What is the maximum allowable voltage on the BSTA, BSTB, and BSTC pins of the DRV8300UDRGER?

The DRV8300UDRGER specifies an absolute maximum BSTx voltage of 125V, meaning each bootstrap pin (BSTA/BSTB/BSTC) can withstand up to 125V relative to GND. This rating enables safe operation with 15S Li-ion battery packs and provides margin against voltage spikes during switching transients. Exceeding this limit risks permanent damage to the internal bootstrap diodes and gate driver circuitry. The recommended operating range remains 5–105V BSTx relative to SHx.

How does the MODE pin affect low-side gate drive behavior in the DRV8300UDRGER?

The MODE pin on the DRV8300UDRGER determines whether the GLx outputs invert or follow the INLx inputs: when MODE is left floating, GLx is non-inverted (same polarity as INLx); when MODE is tied to GVDD, GLx becomes inverted (opposite polarity). This feature allows seamless interface with MCUs that generate complementary or single-ended PWM signals. The DRV8300UDRGER's MODE pin functionality is exclusive to the VQFN package and not available on TSSOP variants.

What is the purpose of the DT pin on the DRV8300UDRGER, and how is it configured?

The DT pin on the DRV8300UDRGER adjusts deadtime between high-side and low-side gate drive signals to prevent shoot-through. Connecting a resistor between DT and GND sets deadtime linearly from 200ns to 2000ns; floating the pin defaults to 200ns fixed deadtime. This hardware-based tuning eliminates software timing dependencies and ensures consistent overlap prevention across temperature and voltage ranges. The DT pin is only present on the VQFN-24 (RGE) package, including the DRV8300UDRGER.

Does the DRV8300UDRGER include built-in protection against undervoltage conditions?

Yes, the DRV8300UDRGER includes dual undervoltage lockout (UVLO) circuits: GVDDUV (8–8.6V rising threshold) disables all gate outputs if the gate supply drops below specification, while BSTUV (7.5–8.7V rising threshold) disables only the corresponding high-side output (GHx) if its bootstrap voltage sags. Both protections feature automatic recovery after threshold clearance and a valid PWM edge, ensuring fail-safe operation during battery voltage sag or bootstrap capacitor discharge in BLDC motor applications.

Can the DRV8300UDRGER drive both silicon MOSFETs and GaN FETs?

Yes, the DRV8300UDRGER is compatible with both silicon MOSFETs and enhancement-mode GaN FETs due to its 750mA source / 1.5A sink peak gate drive current, 4nS typical propagation delay matching, and 10–50nS rise/fall times (with 1nF load). Its 3.3V/5V logic inputs and 8.7–20V GVDD range align with common GaN gate requirements, while the -22V SHx transient rating accommodates fast-switching node ringing. Layout best practices-such as minimized loop inductance and proper gate resistor selection-remain critical for reliable GaN operation.