Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Toshiba Semiconductor and Storage DSF01S30SL,L3F

Part No.:
DSF01S30SL,L3F
Manufacturer:
Toshiba Semiconductor and Storage
Category:
Single Diodes
Package:
2-SMD, No Lead
Datasheet:
AetrixDSF01S30SL,L3F.pdf
Description:
DIODE SCHOTTKY 30V 100MA SL2
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:12,580

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DSF01S30SL,L3F from Toshiba is a silicon epitaxial Schottky barrier diode optimized for high-speed switching, with 30 V reverse voltage rating, 100 mA average rectified current, and low forward voltage of 0.41 V (typ.) at 100 mA. It serves as a freewheeling or clamping diode in compact DC-DC converters and portable power supplies.

For engineers reviewing the DSF01S30SL,L3F datasheet, DSF01S30SL,L3F pinout, DSF01S30SL,L3F application, or DSF01S30SL,L3F equivalent, key selection criteria include its SL2 package footprint, thermal behavior under pulsed forward current, reverse leakage tolerance at 30 V, and suitability for space-constrained 1.6 mm² PCB land patterns.

Technical Context

This Schottky diode uses a planar silicon epitaxial structure to achieve fast recovery with negligible minority-carrier storage, enabling operation up to several MHz in switching regulators. Its low VF reduces conduction loss, while its 9.3 pF junction capacitance at 0 V supports high-frequency signal integrity in flyback snubbers and synchronous rectifier gate drive paths.

The device operates within a junction temperature range of –55 °C to +125 °C and is rated for non-repetitive surge currents up to 2 A (10 ms pulse). Thermal design must account for higher reverse leakage versus PN-junction diodes, particularly above 85 °C ambient.

Key Specifications

ParameterValue and Actual Design Meaning
Reverse Voltage (VR)30 V - Maximum blocking capability in off-state; defines usable input voltage headroom in buck/flyback outputs.
Average Rectified Current (IO)100 mA - Continuous DC current handling on standard FR-4 PCB; limits power stage output capacity.
Forward Voltage (VF)0.41 V (typ.) @ 100 mA - Reduces conduction loss by ~60% vs. comparable 1N4148; critical for efficiency in low-voltage, high-duty-cycle apps.
Reverse Current (IR)7 µA max @ 10 V - Higher than PN diodes; requires thermal derating above 85 °C to avoid runaway.
Junction Capacitance (Ct)9.3 pF @ 0 V, 1 MHz - Enables <1 ns rise/fall in clamp circuits; impacts EMI filtering effectiveness.
Peak Forward Surge Current (IFSM)2 A (10 ms pulse) - Supports transient overload in start-up or fault conditions without bond-wire fusing.
PackageSL2 (TOSHIBA 1-1AL1A) - 0.2 mg ultra-lightweight SMD; 1.2 × 0.8 mm footprint fits 1.6 mm² pad area per JEDEC MS-012 variant.

Pinout & Package

DSF01S30SL,L3F is housed in the SL2 surface-mount package (TOSHIBA designation: 1-1AL1A), a miniature leadless chip-scale diode package with exposed cathode and anode terminals on opposite edges. The package weighs 0.2 mg and uses a glass epoxy board-compatible land pattern per JEDEC MS-012 guidelines.

Pin/TerminalCircuit RoleDesign Meaning
1CathodeConnected to ground or low-side reference; carries return current path and defines polarity in rectification.
2AnodeConnected to switched node or positive rail; accepts forward-biased current during conduction phase.

Key Features

FeatureDesign Value
Low forward voltage0.41 V typ. @ 100 mA - Directly lowers I²R losses in battery-powered 3.3 V/5 V DC-DC stages.
Fast switching responseNo minority carrier storage - Enables clean zero-crossing in PWM-controlled LED drivers below 100 ns.
Miniature SL2 footprint1.2 × 0.8 mm - Allows placement adjacent to ICs in space-limited wearables and IoT sensor nodes.
Controlled junction capacitance9.3 pF @ 0 V - Matches timing requirements in RC snubbers for 500 kHz–2 MHz SMPS designs.

Applications

USB Power Delivery ClampPortable DC-DC Converter Freewheel

Use Scenario: Clamps voltage spikes on USB-C VBUS line during hot-plug events or cable disconnect transients.

IC Role / Device Role / Timing Role: Transient voltage suppressor placed between VBUS and GND, operating in reverse-biased breakdown mode.

Use Value: 30 V VR rating matches USB PD 3.0 max bus voltage; 2 A IFSM withstands 10 ms surges without degradation.

Use Scenario: Freewheeling path in 1 MHz synchronous buck converter powering Bluetooth SoC in hearing aids.

IC Role / Device Role / Timing Role: Low-loss续流 diode conducting during high-side FET off-time; enables >92% efficiency at 100 mA load.

Use Value: 0.41 V VF minimizes dropout and heat generation in thermally isolated earpiece enclosure.

Low-Power Sensor Node Rail ClampIoT Wireless Module ESD Protection

Use Scenario: Protects 3.3 V supply rail of environmental sensor node against inductive kickback from piezo actuator driver.

IC Role / Device Role / Timing Role: Reverse-biased clamp limiting rail overshoot to ≤3.6 V during 100 ns transients.

Use Value: 9.3 pF Ct ensures minimal loading on 3.3 V LDO output; SL2 size avoids routing congestion on 10 mm × 10 mm PCB.

Use Scenario: Input-stage ESD protection for 2.4 GHz RF transceiver antenna port in smart home hub.

IC Role / Device Role / Timing Role: High-speed shunt diode diverting HBM ±8 kV pulses away from sensitive RF front-end.

Use Value: Fast recovery and low IR prevent RF insertion loss; SL2 package maintains 50 Ω impedance continuity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
RBS1UA30T3G30 V VR, 100 mA IO, VF = 0.45 V @ 100 mA; SOD-323 package (1.7 × 1.3 mm)Larger footprint; 0.04 V higher VF increases conduction loss in 100 mA continuous appsPrefer when existing layout accommodates SOD-323 and thermal margin exceeds 15 °C
NSR0130P2T5G30 V VR, 200 mA IO, VF = 0.39 V @ 100 mA; SOD-523 package (1.2 × 0.8 mm same as SL2)Higher current rating but 50% greater IR (max 35 µA @ 10 V); less stable at elevated temperatureSelect only if IO > 100 mA is required and ambient stays below 70 °C

Compared with RBS1UA30T3G and NSR0130P2T5G, DSF01S30SL,L3F delivers optimal balance of low VF, tight thermal stability, and minimal footprint-making it preferred for space- and efficiency-critical 100 mA DC-DC stages where long-term reliability at 85–105 °C matters.

Availability

DSF01S30SL,L3F is available at Aetrix Electronics and suitable for USB power delivery clamping, portable DC-DC converter freewheeling, and low-power sensor node rail protection requiring stable component supply across production lifecycles.

Supply support for DSF01S30SL,L3F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs for industrial, automotive, and consumer applications, with emphasis on reliability and miniaturization.

DSF01S30SL,L3F belongs to Toshiba's SL2-series Schottky diode product line, engineered specifically for high-efficiency, space-constrained DC-DC conversion and transient suppression in portable electronics.

FAQ

What is the maximum junction temperature for DSF01S30SL,L3F?

The DSF01S30SL,L3F has a maximum junction temperature (Tj) rating of +125 °C. This limit applies under continuous operation with proper PCB thermal design-specifically, mounting on a 25.4 mm × 25.4 mm × 1.6 mm glass epoxy board with 645 mm² copper pad area. Exceeding this temperature risks accelerated degradation of reverse leakage and forward voltage stability.

Does DSF01S30SL,L3F have a specified reverse recovery time (trr)?

No, DSF01S30SL,L3F does not specify reverse recovery time (trr) because it is a Schottky barrier diode with majority-carrier conduction-no minority carrier storage exists. Its switching speed is governed by junction capacitance (9.3 pF) and series resistance, enabling effective operation beyond 10 MHz in clamping and snubber roles without trr-related tail current.

Can DSF01S30SL,L3F be used in place of a 1N4148 in high-speed logic circuits?

DSF01S30SL,L3F is not recommended as a direct replacement for 1N4148 in general-purpose logic clamping due to its higher reverse leakage (up to 7 µA vs. 1N4148's 25 nA) and lower reverse voltage rating (30 V vs. 100 V). While its faster intrinsic response benefits SMPS, its leakage may disrupt high-impedance logic nodes or cause false triggering in precision analog interfaces.

What is the meaning of the "L3F" suffix in DSF01S30SL,L3F?

The "L3F" suffix in DSF01S30SL,L3F denotes Toshiba's tape-and-reel packaging specification: L3 indicates 3 mm tape pitch, and F signifies Fuji machine compatibility for automated SMT placement. This ensures consistent feeding accuracy and minimal component damage during high-volume assembly of DSF01S30SL,L3F onto PCBs.

Is DSF01S30SL,L3F RoHS compliant and halogen-free?

Yes, DSF01S30SL,L3F complies with EU RoHS Directive 2011/65/EU and is halogen-free per IEC 61249-2-21. Toshiba confirms this status in its official environmental compliance documentation; no lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE substances exceed threshold limits, and brominated flame retardants are absent from the molding compound.

DSF01S30SL,L3F Specifications

Product attributes
Attribute value
Manufacturer:
Toshiba Semiconductor and Storage
Series:
-
Package/Case:
2-SMD, No Lead
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
Schottky
Voltage - DC Reverse (Vr) (Max):
30 V
Current - Average Rectified (Io):
100mA
Voltage - Forward (Vf) (Max) @ If:
500 mV @ 100 mA
Speed:
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
50 µA @ 30 V
Capacitance @ Vr, F:
9.02pF @ 2V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SL2
Operating Temperature - Junction:
125°C (Max)

DSF01S30SL,L3F FAQ

1.How can I place an order for DSF01S30SL,L3F through Aetrix?

Please submit a Request for Quotation (RFQ) for DSF01S30SL,L3F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DSF01S30SL,L3F reliable?

The price and inventory of DSF01S30SL,L3F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DSF01S30SL,L3F is usually 5 days.

3.What payment methods are accepted for DSF01S30SL,L3F?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DSF01S30SL,L3F transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DSF01S30SL,L3F?

DSF01S30SL,L3F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DSF01S30SL,L3F order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DSF01S30SL,L3F?

For technical support, including DSF01S30SL,L3F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DSF01S30SL,L3F requirements.

6.How does Aetrix verify that DSF01S30SL,L3F is sourced from the original manufacturer or authorized distributors?

All DSF01S30SL,L3F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DSF01S30SL,L3F meets industry standards.

7.What is the process for return or replacement of DSF01S30SL,L3F?

All DSF01S30SL,L3F units undergo pre-shipment inspection (PSI). If there is an issue with DSF01S30SL,L3F, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DSF01S30SL,L3F part is unused and in its original packaging.

Return procedure for DSF01S30SL,L3F:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DSF01S30SL,L3F Tags

  • DSF01S30SL,L3F
  • DSF01S30SL,L3F PDF
  • DSF01S30SL,L3F Datasheet
  • DSF01S30SL,L3F Specifications
  • DSF01S30SL,L3F Images
  • Toshiba Semiconductor and Storage
  • Toshiba Semiconductor and Storage DSF01S30SL,L3F
  • Buy DSF01S30SL,L3F
  • DSF01S30SL,L3F Price
  • DSF01S30SL,L3F Distributor
  • DSF01S30SL,L3F Supplier
  • DSF01S30SL,L3F Wholesale
Related Products
1N4448X-TP
1N4448X-TP

Micro Commercial Co

1N4148WX-TP
1N4148WX-TP

Micro Commercial Co

1N4148TR
1N4148TR

onsemi

MMSD4148T1G
MMSD4148T1G

onsemi

MMBD914LT3G
MMBD914LT3G

onsemi

BAS16HT1G
BAS16HT1G

onsemi

1N914BWT
1N914BWT

onsemi

BAS21LT1G
BAS21LT1G

onsemi

LL4148
LL4148

onsemi

BAS16LT1G
BAS16LT1G

onsemi

MMSD914T1G
MMSD914T1G

onsemi

BAV21W-7-F
BAV21W-7-F

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER