Toshiba Semiconductor and Storage DSR01S30SC,L3F

Overview

DSR01S30SC from Toshiba is a silicon epitaxial Schottky barrier diode optimized for high-speed switching applications, with 30 V reverse voltage rating, 100 mA average forward current (on FR4 board), and low forward voltage drop of 0.51 V at 100 mA. It serves as a rectifier or freewheeling diode in compact DC-DC converters.

For engineers reviewing the DSR01S30SC datasheet, DSR01S30SC pinout, DSR01S30SC application, or DSR01S30SC equivalent, key selection criteria include its ultra-low VF at low IF, sub-1 μA reverse leakage at 30 V, 8.2 pF junction capacitance, SC-2 package footprint, and thermal derating guidance for sustained operation near Tj = 125°C.

Technical Context

This Schottky diode uses an epitaxial silicon structure to achieve fast recovery (no minority-carrier storage) and low conduction loss. Its VF–IF curve shows minimal voltage rise from 0.37 V @ 10 mA to 0.51 V @ 100 mA, enabling high efficiency in low-voltage, high-frequency switching paths.

Reverse leakage remains tightly controlled-IR ≤ 0.7 μA at VR = 30 V and 25°C-with temperature-dependent increase up to ~100 μA at 100°C. Total capacitance of 8.2 pF at 0 V/1 MHz supports high-frequency decoupling and snubberless flyback designs.

Key Specifications

Pinout & Package

DSR01S30SC is housed in the SC-2 (also known as SOD-323) surface-mount package: 0.62 mm × 0.38 mm body, 0.27 mm height, 0.19 mm lead pitch, cathode marked with band. Weight: 0.17 mg (typ.).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Compared with RBS2M-13-F and NSR0130P2T5G, the DSR01S30SC offers the lowest junction capacitance (8.2 pF) in SC-2, making it optimal for >1 MHz switching noise-sensitive designs, though its VF is slightly higher than both alternatives-acceptable where EMI reduction outweighs marginal conduction loss.

Availability

DSR01S30SC is available at Aetrix Electronics and suitable for USB power interfaces, low-power IoT sensor nodes, industrial PLC I/O modules, and white LED backlight drivers requiring stable component supply and long-term obsolescence planning.

Supply support for DSR01S30SC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on energy efficiency, miniaturization, and industrial reliability.

The DSR01S30SC belongs to Toshiba's Schottky barrier diode product line targeting space-constrained, high-frequency power conversion in consumer, computing, and industrial equipment.

FAQ

What is the maximum continuous forward current rating for DSR01S30SC?

The DSR01S30SC has an average forward current (IO) rating of 100 mA when mounted on a standard FR4 PCB (25.4 mm × 25.4 mm × 1.6 mm with 645 mm² copper pad). This rating assumes Ta = 25°C and requires thermal derating above 85°C ambient per Toshiba's Reliability Handbook. Exceeding this without adequate copper area risks accelerated degradation.

Does DSR01S30SC have a specified reverse recovery time (trr)?

No-DSR01S30SC is a Schottky barrier diode and exhibits no minority-carrier storage, so it does not specify reverse recovery time (trr). Its switching is limited only by junction capacitance (8.2 pF) and package inductance, enabling effective operation in >10 MHz switching applications where conventional PN diodes would fail due to recovery losses.

What is the cathode marking convention for DSR01S30SC?

The DSR01S30SC uses a band at terminal 1 to indicate the cathode, consistent with JEDEC-standard SC-2 (SOD-323) orientation. The top-view marking "1-1R1A" corresponds to Toshiba's internal lot/batch code and does not denote polarity; physical band placement-not marking-is the definitive cathode indicator.

Can DSR01S30SC be used in automotive applications?

DSR01S30SC is not qualified to AEC-Q101 and is excluded from automotive use per Toshiba's RESTRICTIONS ON PRODUCT USE notice. It is not intended for systems where failure could cause safety hazard-including vehicle control, ADAS, or powertrain subsystems-and lacks extended temperature validation beyond −55°C to +125°C junction range.

How does junction temperature affect reverse leakage in DSR01S30SC?

Reverse leakage (IR) in DSR01S30SC increases exponentially with junction temperature: from ≤0.7 μA at VR = 30 V and 25°C to ~100 μA at 100°C. This behavior-documented in the IR–VR curves-must be accounted for in battery-critical or thermally isolated designs, where elevated Tj can degrade system standby current by orders of magnitude.