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Diodes Incorporated DSS4160FDB-7
- Part No.:
- DSS4160FDB-7
- Manufacturer:
- Diodes Incorporated
- Category:
- Bipolar Transistor Arrays
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DSS4160FDB-7.pdf
- Description:
- TRANS 2NPN 60V 1A U-DFN2020-6
- Quantity:
- Payment:
- Shipping:
Inventory:55
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Product details
Overview
DSS4160FDB-7 from Diodes Incorporated is a dual NPN low VCE(SAT) transistor in a U-DFN2020-6 (Type B) package, rated for 60V VCEO, 1A continuous collector current per channel, and 180 mΩ equivalent on-resistance. It serves as a high-efficiency load switch in power management circuits where low conduction loss and thermal efficiency are critical-e.g., USB-C charging switches and fan motor drivers.
For engineers reviewing the DSS4160FDB-7 datasheet, DSS4160FDB-7 pinout, DSS4160FDB-7 application, or DSS4160FDB-7 equivalent, key selection criteria include verified dual-NPN topology, sub-220 mV VCE(SAT) at 1A, 0.6 mm profile for space-constrained PCBs, RθJA as low as 51 °C/W with enhanced copper layout, and JEDEC-compliant 4 kV HBM ESD rating.
Technical Context
This dual NPN transistor integrates two independent high-voltage switching elements sharing a common thermal pad, enabling synchronous or independent control of two DC loads. Its BVCEO = 60 V and VBE(ON) ≤ 0.9 V at 0.5 A support robust operation in 5–24 V rail applications without base drive overhead.
The device uses NiPdAu-plated terminals and a halogen/antimony-free green molding compound, meeting RoHS 2 and UL 94V-0 flammability requirements. Thermal performance is defined across two mounting conditions: minimal pad (RθJA = 308 °C/W) and 28 mm × 28 mm 2 oz copper (RθJA = 51 °C/W), enabling accurate derating in both compact and thermally optimized designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 60 V - Supports reliable switching in 24 V industrial and 19–20 V laptop adapter systems without breakdown risk. |
| IC (cont.) | 1 A per channel - Enables direct driving of small motors, LEDs, or USB power switches without external current amplification. |
| VCE(SAT) | 170–220 mV @ 1 A / 100 mA base - Minimizes conduction loss (<220 mW per channel), reducing self-heating in always-on load paths. |
| RCE(SAT) | 180 mΩ - Equivalent to discrete MOSFET RDS(on) in low-voltage logic-level switching, simplifying gate-drive design. |
| fT | 90–175 MHz - Sufficient for PWM frequencies up to ~10 MHz, supporting fast transient response in adaptive power sequencing. |
| ESD HBM | 4 kV - Meets IEC 61000-4-2 Level 3 for system-level ESD immunity without additional protection circuitry. |
| RθJA (enhanced) | 51 °C/W - Allows 2.47 W total dissipation with <125°C junction rise above 25°C ambient when mounted on 8 cm² copper. |
Pinout & Package
U-DFN2020-6 (Type B) package: 2.0 mm × 2.0 mm × 0.6 mm low-profile, thermally enhanced leadless package with exposed collector pads on underside for optimal heat transfer.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (C1) | Collector 1 | Primary current output node for first NPN transistor; connected to exposed thermal pad for low RθJL = 18 °C/W. |
| 2 (B2) | Base 2 | Control input for second NPN transistor; requires ~100 mA drive for full saturation at 1 A load. |
| 3 (E2) | Emiter 2 | Return path for second transistor; tied to GND or current-sense resistor for feedback. |
| 4 (E1) | Emiter 1 | Return path for first transistor; electrically isolated from E2 unless externally connected. |
| 5 (B1) | Base 1 | Control input for first NPN transistor; compatible with 3.3 V or 5 V logic-level drive. |
| 6 (C2) | Collector 2 | Primary current output node for second NPN transistor; shares thermal pad with C1 for symmetrical heat spreading. |
Key Features
| Feature | Design Value |
|---|---|
| Low VCE(SAT) | 170 mV typical at 1 A ensures <170 mW conduction loss per channel, reducing thermal stress in dual-load configurations. |
| Dual-channel isolation | Independent B1/E1/C1 and B2/E2/C2 terminals enable asynchronous switching of two separate loads without crosstalk. |
| Enhanced thermal resistance | RθJA = 51 °C/W with 28 mm² copper reduces required heatsinking area by >75% versus standard SOT-26 equivalents. |
| Green compound & plating | NiPdAu finish and halogen/antimony-free molding meet automotive PPAP and IPC-J-STD-020 Level 1 moisture sensitivity requirements. |
Applications
| USB-C Power Delivery Switch | DC Fan Motor Driver |
|---|---|
|
Use Scenario: Bidirectional 5–20 V load switching in USB-C PD sink applications requiring overvoltage and reverse-current protection. IC Role / Device Role / Timing Role: Dual NPN acts as back-to-back series switch controlling VBUS path; one channel handles forward conduction, the other enables active discharge during disconnect. Use Value: Sub-220 mV VCE(SAT) limits voltage drop across switch to <440 mV total, preserving minimum 4.75 V at load under 1 A while minimizing power loss. |
Use Scenario: 12 V DC brushless fan control in network equipment with PWM-based speed regulation and thermal foldback. IC Role / Device Role / Timing Role: Each NPN channel drives one side of an H-bridge half-bridge configuration or independently controls two fans in redundant cooling systems. Use Value: 1 A per channel supports fans drawing up to 800 mA stall current; 4 kV HBM withstands ESD events from airflow-induced tribocharging. |
| Portable Battery Charger IC Interface | Industrial PLC Digital Output Module |
|
Use Scenario: High-side switching between battery charger IC and Li-ion cell pack in portable medical devices requiring low quiescent loss. IC Role / Device Role / Timing Role: NPN pair functions as programmable current-limiting switch, with emitter sensing enabling real-time charge current monitoring. Use Value: 180 mΩ RCE(SAT) allows precise current sense resolution using <10 mΩ shunts, avoiding gain errors from VCE drift. |
Use Scenario: 24 V DC digital output stage in modular PLC I/O cards handling solenoid, relay, and indicator loads. IC Role / Device Role / Timing Role: Dual transistor provides two independent 1 A outputs per chip, supporting parallel channel expansion without external driver ICs. Use Value: 60 V BVCEO safely clamps inductive kickback from 24 V solenoids; RθJA = 51 °C/W sustains continuous 1 A operation at 70°C ambient. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual NPN switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ZXTD09N50DE6TA | Higher VCEO = 50 V, lower VCE(SAT) = 140 mV @ 1 A, SOT-563 package (1.3 mm × 1.3 mm). | Smaller footprint but no exposed thermal pad; RθJA = 210 °C/W limits power handling to ~0.6 W. | Select when board space is constrained and thermal load <0.5 W per channel; avoid for sustained 1 A operation. |
| DMN3026LSD-13 | Single N-channel MOSFET (30 V, 6.5 A, 26 mΩ), SO-8 package; requires level-shifting for high-side use. | No integrated dual topology; needs external gate drivers and bootstrap circuitry for floating operation. | Choose for higher current (>1.5 A) or lower RDS(on) needs, accepting added complexity and layout area. |
Compared with ZXTD09N50DE6TA and DMN3026LSD-13, DSS4160FDB-7 uniquely delivers dual 1 A NPN switching in a thermally optimized 2.0 mm × 2.0 mm DFN with verified 60 V capability and integrated thermal pad-making it optimal for compact, high-reliability DC load switching where simplicity, thermal headroom, and voltage margin are jointly prioritized.
Availability
DSS4160FDB-7 is available at Aetrix Electronics and suitable for USB-C power delivery modules, industrial PLC output stages, portable battery charger interfaces, and DC fan motor drivers requiring stable component supply and long-term manufacturability.
Supply support for DSS4160FDB-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design and manufacturing operations across Asia and the Americas.
The DSS4160FDB-7 belongs to Diodes' low-saturation-voltage bipolar transistor family, engineered specifically for high-efficiency DC load switching in space- and thermal-constrained applications such as portable power electronics and industrial control modules.
FAQ
What is the maximum safe operating temperature for DSS4160FDB-7?
The DSS4160FDB-7 has an operating junction temperature range of –55°C to +150°C. With RθJA = 51 °C/W on 28 mm² copper, it sustains 1 A per channel continuously at up to +70°C ambient while staying below 125°C junction-verified per JEDEC JESD51-2 thermal test standards.
Can DSS4160FDB-7 be used in high-side switching configurations?
Yes-each NPN channel can be configured as a high-side switch when paired with a base resistor and level-shifting network. The 60 V VCEO rating supports 24 V rail operation, and VBE(ON) ≤ 0.9 V at 0.5 A ensures compatibility with standard 3.3 V or 5 V microcontroller GPIOs.
Is the U-DFN2020-6 (Type B) package compatible with standard reflow profiles?
Yes-the device is qualified to JEDEC J-STD-020 Level 1 moisture sensitivity and supports standard lead-free reflow profiles (peak 260°C, 30 sec max). Its NiPdAu finish ensures solderability per MIL-STD-202 Method 208, and the 0.6 mm height avoids tombstoning in fine-pitch assembly.
Does DSS4160FDB-7 require external flyback diodes when driving inductive loads?
Yes-while the transistor's 60 V BVCEO provides margin against moderate inductive kickback, external flyback diodes (e.g., 1N4148 or Schottky) are required across solenoids or relays to clamp energy and prevent secondary breakdown. The device lacks integrated clamp diodes or avalanche rating.
DSS4160FDB-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- 2 NPN (Dual)
- Current - Collector (Ic) (Max):
- 1A
- Voltage - Collector Emitter Breakdown (Max):
- 60V
- Vce Saturation (Max) @ Ib, Ic:
- 240mV @ 50mA, 1A
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 150 @ 500mA, 2V
- Power - Max:
- 405mW
- Frequency - Transition:
- 175MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type B)
DSS4160FDB-7 FAQ
1.How can I place an order for DSS4160FDB-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DSS4160FDB-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DSS4160FDB-7 reliable?
The price and inventory of DSS4160FDB-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DSS4160FDB-7 is usually 5 days.
3.What payment methods are accepted for DSS4160FDB-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DSS4160FDB-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DSS4160FDB-7?
DSS4160FDB-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DSS4160FDB-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DSS4160FDB-7?
For technical support, including DSS4160FDB-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DSS4160FDB-7 requirements.
6.How does Aetrix verify that DSS4160FDB-7 is sourced from the original manufacturer or authorized distributors?
All DSS4160FDB-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DSS4160FDB-7 meets industry standards.
7.What is the process for return or replacement of DSS4160FDB-7?
All DSS4160FDB-7 units undergo pre-shipment inspection (PSI). If there is an issue with DSS4160FDB-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DSS4160FDB-7 part is unused and in its original packaging.
Return procedure for DSS4160FDB-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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