Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DSS5160FDB-7

Part No.:
DSS5160FDB-7
Manufacturer:
Diodes Incorporated
Category:
Bipolar Transistor Arrays
Package:
6-UDFN Exposed Pad
Datasheet:
AetrixDSS5160FDB-7.pdf
Description:
TRANS 2PNP 60V 1A U-DFN2020-6
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,888

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DSS5160FDB-7 from Diodes Incorporated is a dual PNP low-VCE(sat) transistor in a U-DFN2020-6 package, rated for -60V VCEO, -1A continuous collector current per channel, and 200mΩ equivalent on-resistance. It serves as a compact, high-efficiency load switch in power management circuits, charging systems, and motor/fan drive stages where space-constrained, thermally efficient switching is required.

For engineers reviewing the DSS5160FDB-7 datasheet, DSS5160FDB-7 pinout, DSS5160FDB-7 application, or DSS5160FDB-7 equivalent, key selection criteria include its dual-channel PNP topology, -340mV VCE(sat) at -1A/-100mA, 0.6mm profile, RθJA as low as 51°C/W with enhanced copper layout, and RoHS-compliant "Green" construction.

Technical Context

This dual PNP transistor integrates two matched silicon die in a single U-DFN2020-6 leadless package with exposed collector pads for thermal performance. Each channel supports independent operation with BVCEO = -60V, VCE(sat) ≤ -340mV @ -1A/-100mA, and hFE ≥ 70 at -1A.

The device uses NiPdAu-plated terminals for solderability and achieves RθJL = 18°C/W to the exposed collector leads. Its transient thermal impedance and safe operating area (SOA) are characterized for pulsed and DC load-switching duty cycles up to 150°C junction temperature.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO -60V - Supports robust blocking in negative-rail power switches up to industrial 48V systems.
IC (cont.) -1A per channel - Enables direct control of moderate-power loads like fans, LEDs, or charging paths without external drivers.
VCE(sat) -340mV @ -1A/-100mA - Minimizes conduction loss and self-heating in high-duty-cycle load switching.
RCE(sat) 200mΩ - Equivalent on-resistance enables predictable voltage drop modeling in power path analysis.
RθJA 51°C/W (with 28mm × 28mm 2oz Cu) - Delivers 2.47W max power dissipation in optimized PCB layouts.
Package U-DFN2020-6 - 2.0 × 2.0 × 0.6mm footprint ideal for ultra-thin portable and wearable electronics.
ESD HBM 4000V - Provides inherent system-level ESD resilience in end-equipment without added protection circuitry.

Pinout & Package

U-DFN2020-6 is a 6-terminal, bottom-exposed, leadless plastic package with dual exposed collector pads (C1, C2) for thermal and electrical connection. Pin 1 identifier is marked by a chamfered corner (bottom view).

Pin/Terminal Circuit Role Design Meaning
1 (C1) Collector 1 Exposed pad - primary thermal path and high-current output node for Q1.
2 (B1) Base 1 Control input for Q1; requires current-limited drive due to VBE(sat) ≈ -1.0V @ -1A.
3 (E1) Emitter 1 High-side reference node for Q1; connects to supply rail in high-side switch configuration.
4 (E2) Emitter 2 High-side reference node for Q2; electrically isolated from E1 but same potential in dual-switch applications.
5 (B2) Base 2 Independent control input for Q2; enables synchronous or staggered dual-load switching.
6 (C2) Collector 2 Exposed pad - primary thermal path and high-current output node for Q2.

Key Features

Feature Design Value
Dual PNP topology Two matched, independently controllable transistors reduce board area vs. discrete solutions and simplify dual-load routing.
Low-profile 0.6mm height Enables integration into <1.0mm-thick consumer devices such as smartwatches and hearing aids.
RθJA 40% lower than SOT-26 Improves thermal headroom in dense layouts without heatsinks or airflow - critical for sealed enclosures.
Halogen & antimony free Meets IEC 61249-2-21 and JEDEC J-STD-70B for environmentally compliant manufacturing and disposal.
NiPdAu terminal finish Ensures reliable solder joint formation and long-term intermetallic stability under thermal cycling.

Applications

USB-C Power Delivery Switching Wireless Charging Control

Use Scenario: Managing bidirectional 5–20V power path selection between source and sink in USB-C PD controllers.

IC Role / Device Role: Dual high-side PNP switch enabling independent enable/disable of VBUS and VCONN rails.

Use Value: -340mV VCE(sat) minimizes voltage droop across 1A charging currents, preserving PD negotiation margins.

Use Scenario: Enabling/disabling transmitter coil power and receiver rectifier bias in Qi-compliant charging modules.

IC Role / Device Role: Load switch controlling gate drive and bias supplies to GaN FETs and synchronous rectifiers.

Use Value: 0.6mm profile allows placement beneath thin ferrite shields; dual channels support Tx/Rx isolation without cross-talk.

Industrial Sensor Node Power Gating Medical Wearable Battery Management

Use Scenario: Selectively powering analog front-end ICs (e.g., ADCs, amplifiers) in battery-operated IIoT sensors during measurement cycles.

IC Role / Device Role: Low-leakage, high-VCEO switch isolating sub-circuits to extend shelf life and reduce quiescent current.

Use Value: -100nA ICBO at -48V ensures <1µA total leakage per channel, critical for multi-year battery life.

Use Scenario: Isolating rechargeable Li-ion battery from patient-monitoring subsystems (ECG, SpO₂) during sleep mode.

IC Role / Device Role: Dual-channel power gate managing separate analog and digital domain supplies to meet IEC 62304 safety requirements.

Use Value: Matched hFE and VCE(sat) ensure balanced turn-on timing and thermal distribution across safety-critical domains.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual PNP load switch applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN3026LSD-13 N-channel dual MOSFET (30V, 3.2A), logic-level gate, no body diode conduction in reverse direction. Requires level-shifting for high-side use; better for low-VDS(on) (<20mΩ) but lacks native high-side simplicity. Select when efficiency at <100mA matters more than board space or gate drive complexity.
ZXTDM617000CTA Dual PNP (60V, -1.5A), SOT-26 package, higher RθJA (125°C/W), no exposed thermal pad. Larger footprint (3.0 × 1.7mm), less suitable for ultra-thin designs; lower thermal performance limits sustained 1A operation. Choose only if legacy SMT process cannot accommodate U-DFN2020-6 reflow profiles or stencil design.

Compared with DMN3026LSD-13 and ZXTDM617000CTA, DSS5160FDB-7 uniquely combines dual PNP functionality, 0.6mm height, and 51°C/W thermal resistance - making it optimal for space- and thermally constrained high-side switching where gate drive simplicity and SOA margin are prioritized over sub-50mΩ on-resistance.

Availability

DSS5160FDB-7 is available at Aetrix Electronics and suitable for USB-C power delivery modules, wireless charging controllers, industrial sensor nodes, and medical wearable battery management systems requiring stable component supply and long-term manufacturability.

Supply support for DSS5160FDB-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability, energy-efficient components for power management, signal integrity, and protection.

DSS5160FDB-7 belongs to Diodes' precision bipolar transistor portfolio, engineered specifically for compact, thermally demanding load-switching applications in portable and battery-powered systems.

FAQ

What is the maximum continuous current per channel for DSS5160FDB-7?

The DSS5160FDB-7 supports -1A continuous collector current per channel at TA = +25°C with recommended PCB copper area (28mm × 28mm, 2oz). Derating applies above 25°C ambient; at 85°C, max IC drops to approximately -0.65A per channel based on the published derating curve.

Can DSS5160FDB-7 be used in high-side switch configurations?

Yes - its dual PNP structure is inherently suited for high-side switching. Emitters connect to positive supply rails; collectors drive loads to ground. Base drive must be referenced to emitter potential, typically using resistor-limited current sources or dedicated PNP driver ICs to ensure sufficient -100mA base current for full saturation at -1A load.

Is the U-DFN2020-6 package compatible with standard reflow profiles?

Yes - the U-DFN2020-6 package is qualified for IPC/JEDEC J-STD-020 moisture sensitivity Level 1 and supports standard lead-free reflow profiles (peak 260°C, 60s max above 217°C). The NiPdAu terminal finish ensures wetting reliability; recommended stencil aperture is 100% opening with 0.1mm thickness for optimal solder paste release.

Does DSS5160FDB-7 have integrated ESD protection?

Yes - it meets JEDEC JESD22-A114 Class 3A (4000V HBM) and JESD22-A115 (400V MM) ESD ratings. This level of on-die protection eliminates need for external TVS diodes in most consumer and industrial interfaces, though system-level ESD testing remains essential for final product validation.

DSS5160FDB-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
6-UDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
2 PNP (Dual)
Current - Collector (Ic) (Max):
1A
Voltage - Collector Emitter Breakdown (Max):
60V
Vce Saturation (Max) @ Ib, Ic:
550mV @ 50mA, 1A
Current - Collector Cutoff (Max):
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 500mA, 2V
Power - Max:
405mW
Frequency - Transition:
65MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
U-DFN2020-6 (Type B)

DSS5160FDB-7 FAQ

1.How can I place an order for DSS5160FDB-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DSS5160FDB-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DSS5160FDB-7 reliable?

The price and inventory of DSS5160FDB-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DSS5160FDB-7 is usually 5 days.

3.What payment methods are accepted for DSS5160FDB-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DSS5160FDB-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DSS5160FDB-7?

DSS5160FDB-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DSS5160FDB-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DSS5160FDB-7?

For technical support, including DSS5160FDB-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DSS5160FDB-7 requirements.

6.How does Aetrix verify that DSS5160FDB-7 is sourced from the original manufacturer or authorized distributors?

All DSS5160FDB-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DSS5160FDB-7 meets industry standards.

7.What is the process for return or replacement of DSS5160FDB-7?

All DSS5160FDB-7 units undergo pre-shipment inspection (PSI). If there is an issue with DSS5160FDB-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DSS5160FDB-7 part is unused and in its original packaging.

Return procedure for DSS5160FDB-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DSS5160FDB-7 Tags

  • DSS5160FDB-7
  • DSS5160FDB-7 PDF
  • DSS5160FDB-7 Datasheet
  • DSS5160FDB-7 Specifications
  • DSS5160FDB-7 Images
  • Diodes Incorporated
  • Diodes Incorporated DSS5160FDB-7
  • Buy DSS5160FDB-7
  • DSS5160FDB-7 Price
  • DSS5160FDB-7 Distributor
  • DSS5160FDB-7 Supplier
  • DSS5160FDB-7 Wholesale
Related Products
MBT3946DW1T1G
MBT3946DW1T1G

onsemi

BC846BPDW1T1G
BC846BPDW1T1G

onsemi

MBT2222ADW1T1G
MBT2222ADW1T1G

onsemi

BC847BDW1T1G
BC847BDW1T1G

onsemi

DMMT5401-7-F
DMMT5401-7-F

Diodes Incorporated

DMMT5551-7-F
DMMT5551-7-F

Diodes Incorporated

DMMT3904W-7-F
DMMT3904W-7-F

Diodes Incorporated

DMMT3906W-7-F
DMMT3906W-7-F

Diodes Incorporated

FMB3904
FMB3904

onsemi

FMB2222A
FMB2222A

onsemi

ULQ2003D1013TR
ULQ2003D1013TR

STMicroelectronics

ZXTD4591E6TA
ZXTD4591E6TA

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER