Diodes Incorporated DST847BDJ-7

Overview

DST847BDJ from Diodes Incorporated is a dual NPN small-signal transistor in SOT963 package, rated for 45 V V_CEO, 100 mA I_C, and 300 mW power dissipation. It delivers high DC current gain (h_FE = 200–470 at I_C = 2–10 mA), low V_CE(sat) (≤125 mV at I_C = 100 mA), and operates across –55°C to +150°C - used in compact load switching and signal amplification stages of automotive sensor interfaces and portable power management circuits.

For engineers reviewing the DST847BDJ datasheet, DST847BDJ pinout, DST847BDJ application, or DST847BDJ equivalent, key selection criteria include its dual-NPN topology in ultra-small 1 mm² SOT963 footprint, thermal resistance of 417°C/W, JEDEC Class 3A HBM ESD rating (4 kV), complementary PNP pairing with DST857BDJ, and AEC-Q101 qualification readiness for automotive-grade designs.

Technical Context

This dual NPN transistor integrates two independent high-voltage, medium-current gain transistors in a single 6-pin SOT963 package. Each device supports V_CEO = 45 V, I_C = 100 mA, and exhibits f_T = 100–170 MHz at V_CE = 5 V, enabling use in low-power RF amplification and fast-switching digital logic buffers.

Its thermal design targets space-constrained PCBs: 0.5 mm height, 1 mm² footprint (5× smaller than SOT23), and R_θJA = 417°C/W on minimal 1 oz copper pad layout. The device uses matte tin-plated leads, complies with RoHS 3 and halogen/antimony-free "Green" standards, and meets J-STD-020 Level 1 moisture sensitivity.

Key Specifications

Pinout & Package

Package: SOT963 - 0.5 mm height, 1.0 × 1.0 mm body, 6-pin leadless plastic package with exposed thermal pad (not electrically connected). Compliant with JEDEC MO-252.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual NPN transistor applications.

Compared with DST847BDJ, DST857BDJ provides complementary functionality in identical form factor for balanced output stages, while NSVD2N7002PDR2G trades bipolar current gain for MOSFET speed and gate-drive simplicity - making it viable only where base-drive current budget or analog gain is not required.

Availability

DST847BDJ is available at Aetrix Electronics and suitable for automotive cabin sensor interfaces, portable medical instrumentation, industrial PLC I/O modules, and consumer audio amplifier biasing requiring stable component supply, long-term lifecycle assurance, and AEC-Q101-aligned manufacturing traceability.

Supply support for DST847BDJ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets - with ISO/TS 16949 and IATF 16949 certified facilities.

The DST847BDJ belongs to Diodes' "Small-Signal Transistor" product line, engineered specifically for space-constrained, thermally demanding applications requiring dual-channel integration, high-voltage tolerance, and automotive-grade process consistency.

FAQ

What is the maximum operating temperature for DST847BDJ?

The DST847BDJ has an operating junction temperature range of –55°C to +150°C, verified per absolute maximum ratings. Its thermal resistance (R_θJA = 417°C/W) assumes a minimum recommended 1 oz copper pad layout on FR4. Derating begins above +25°C ambient, with full power (300 mW) permitted only up to +70°C ambient per the published derating curve.

Is DST847BDJ qualified for automotive applications?

DST847BDJ is manufactured in IATF 16949-certified facilities and supports PPAP documentation. While not pre-qualified to AEC-Q101 in standard form, Diodes offers AEC-Q101-compliant versions upon request with controlled change management and automotive-specific test reporting - contact Diodes or Aetrix for qualification path details.

How does the SOT963 package improve thermal performance versus SOT23?

The SOT963 package achieves lower thermal resistance (417°C/W) than typical SOT23 (≈600°C/W) due to optimized internal die attach, shorter bond wires, and enhanced thermal path through the exposed pad (though unconnected electrically). Its 0.5 mm height also improves airflow and reduces thermal shadowing from adjacent components.

Can DST847BDJ replace two separate SOT23 NPN transistors?

Yes - DST847BDJ replaces two discrete SOT23 NPN transistors (e.g., BC847) with identical electrical specs and independent pinouts. Its 1 mm² footprint saves >60% board area, and matched h_FE and V_BE across channels enable tighter performance consistency in differential or mirrored circuits.