Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DST847BPDP6-7

Part No.:
DST847BPDP6-7
Manufacturer:
Diodes Incorporated
Category:
Bipolar Transistor Arrays
Package:
SOT-963
Datasheet:
AetrixDST847BPDP6-7.pdf
Description:
TRANS NPN/PNP 45V 100MA SOT-963
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,797

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DST847BPDP6 from Diodes Incorporated is a complementary NPN/PNP small-signal transistor pair in a single SOT-963 package, rated for 45V VCEO, ±100mA IC, and 300mW PD. It delivers matched gain (hFE = 200–470), low VCE(sat) (≤125mV NPN / ≤500mV PNP at rated current), and AEC-Q101 qualification for automotive signal switching and biasing circuits.

For engineers reviewing the DST847BPDP6 datasheet, DST847BPDP6 pinout, DST847BPDP6 application, or DST847BPDP6 equivalent, key selection criteria include complementary polarity matching, thermal derating above 25°C ambient, SOT-963 footprint constraints, and dual-transistor layout efficiency in space-constrained DC-DC feedback or LED driver bias networks.

Technical Context

This dual transistor integrates electrically isolated NPN (Q1) and PNP (Q2) die in one ultra-compact SOT-963 package. Each device supports independent operation with separate base, collector, and emitter terminals - no internal connection between Q1 and Q2. The NPN exhibits fT = 100–175 MHz; the PNP achieves fT = 100–340 MHz under symmetric test conditions (VCE = ±5V, IC = ±10mA).

Thermal design relies on RθJA = 417°C/W (min pad layout, still air), with derated power dissipation down to 0W at TA ≥ 125°C per Fig. 3. ESD robustness includes 4kV HBM and 200V MM ratings, meeting JEDEC JESD22-A114/A115 standards for board-level handling reliability.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO±45 V - Supports rail-to-rail switching across 3.3V to 40V logic and analog supply domains
IC±100 mA - Handles moderate load drive for sensor biasing, level-shifting, and discrete amplifier stages
PD300 mW - Enables thermally constrained PCB layouts without forced cooling in consumer and automotive modules
hFE200–470 - Provides stable current amplification over -55°C to +150°C for closed-loop control loops
fT100–340 MHz - Allows high-frequency signal conditioning up to ~100 MHz in RF front-end bias networks
VCE(sat)≤125 mV (NPN), ≤500 mV (PNP) at IC/IB = 10 - Minimizes conduction loss in active-load and current-source configurations
RθJA417 °C/W - Requires minimum 1 oz copper pad layout on FR4 for safe steady-state operation at full power

Pinout & Package

SOT-963 is a 6-pin, 1.0 × 1.0 mm surface-mount package with 0.5 mm profile height and lead-free matte tin finish. Its compact footprint occupies 5× less area than SOT-23 while maintaining mechanical robustness per AEC-Q101 stress testing.

Pin/TerminalCircuit RoleDesign Meaning
1 (Q1 Emitter)NPN EmitterReference node for NPN current sourcing; connects to ground or low-side return path
2 (Q1 Base)NPN BaseControl input for NPN switch/amplifier; requires current-limiting resistor in series
3 (Q1 Collector)NPN CollectorOutput node for NPN current sinking; ties to load or pull-up network
4 (Q2 Collector)PNP CollectorOutput node for PNP current sourcing; connects to positive rail or high-side load
5 (Q2 Base)PNP BaseControl input for PNP switch/amplifier; referenced to emitter potential
6 (Q2 Emitter)PNP EmitterReference node for PNP current sinking; ties to VCC or high-side supply rail

Key Features

FeatureDesign Value
Complementary NPN/PNP pairingEnables push-pull, differential, or totem-pole topologies without inter-device matching tolerance penalties
AEC-Q101 qualificationValidated for automotive-grade temperature cycling, humidity, and mechanical shock per JESD47 requirements
0.5 mm max heightReduces system Z-height in slim-profile modules such as infotainment displays and ADAS camera housings
Halogen- and antimony-free "Green" compoundMeets EU RoHS 2 and automotive ELV Directive limits (<900 ppm Br/Cl, <1000 ppm Sb)
1 mm² footprintPermits dense placement in multi-channel sensor interface ICs and battery management subsystems

Applications

Automotive LED Headlamp BiasingIndustrial Sensor Signal Conditioning

Use Scenario: Precise current regulation for adaptive front-lighting system (AFS) LED strings operating from 12V vehicle battery.

IC Role / Device Role / Timing Role: Dual-transistor current mirror reference stage providing matched NPN/PNP bias for op-amp-controlled LED drivers.

Use Value: ±45V rating withstands load-dump transients; matched hFE ensures <±5% current tracking across temperature.

Use Scenario: Amplifying low-level bridge outputs from strain-gauge pressure sensors in hydraulic control valves.

IC Role / Device Role / Timing Role: Discrete instrumentation amplifier input stage with NPN common-emitter gain and PNP active load.

Use Value: 340 MHz fT (PNP) enables >100 kHz signal bandwidth; 417°C/W RθJA allows operation at 105°C ambient in sealed enclosures.

Consumer Audio Power StageMedical Infusion Pump Motor Control

Use Scenario: Class-AB output stage in portable headphone amplifiers requiring low THD and rail-efficient swing.

IC Role / Device Role / Timing Role: Complementary emitter-follower pair delivering low-impedance drive to 16Ω loads.

Use Value: VCE(sat) ≤125 mV (NPN) and ≤500 mV (PNP) minimizes voltage headroom loss, extending battery life by 8–12%.

Use Scenario: Microstepping current control for bipolar stepper motors in IV pump actuation systems.

IC Role / Device Role / Timing Role: Dual-transistor H-bridge half-bridge driver with independent NPN/PNP gate control.

Use Value: AEC-Q101 qualification ensures reliability under continuous 24/7 operation; ±100 mA IC supports 200 mA phase current with 2× safety margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary small-signal transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMN3026LSD-13Single N-channel MOSFET (30V, 3.2A), not complementary bipolarLacks PNP counterpart; unsuitable for linear bias or push-pull analog stagesSelect only for digital switching where bipolar linearity and gain are unnecessary
BC846BPDW1T3GComplementary NPN/PNP pair in SOT-363; lower VCEO (65/–65V), higher PD (350mW), same hFE rangeCompatible pinout but larger footprint (2.1×2.3 mm vs. 1.0×1.0 mm); lacks AEC-Q101 certificationChoose when higher voltage margin is required and automotive qualification is not mandatory

Compared with BC846BPDW1T3G, DST847BPDP6 trades 20V lower breakdown for 5× smaller area and AEC-Q101 compliance-critical for space-limited automotive modules. Versus DMN3026LSD-13, it provides true bipolar gain and analog linearity essential for precision biasing, not just switching.

Availability

DST847BPDP6 is available at Aetrix Electronics and suitable for automotive lighting control, industrial sensor interfaces, portable audio amplification, and medical motor drive applications requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for DST847BPDP6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and consumer markets since 1960.

The DST847BPDP6 belongs to Diodes' AEC-Q101-qualified small-signal transistor portfolio, engineered specifically for space-constrained, thermally demanding signal conditioning and switching in automotive ECUs and industrial control units.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The DST847BPDP6 has an absolute maximum junction temperature of +150°C. Continuous operation at this limit requires strict adherence to thermal derating curves in Figure 3: at 100°C ambient, maximum power drops to ~120 mW; at 125°C ambient, it falls to zero. PCB layout must use the recommended 1 oz copper pad per AP02001 to achieve the specified RθJA = 417°C/W.

Can Q1 and Q2 be used in a Darlington configuration?

No-Q1 (NPN) and Q2 (PNP) share no internal connection and have fully independent terminals. Their bases, emitters, and collectors are isolated. A Darlington pair requires direct collector-to-base interconnection between two transistors of the same polarity, which is physically impossible here without external wiring that would compromise layout density and introduce parasitic inductance.

Is the SOT-963 package compatible with standard reflow profiles for lead-free soldering?

Yes-the DST847BPDP6 uses matte tin annealed over copper leadframe and is qualified for Pb-free reflow per IPC/JEDEC J-STD-020. Peak temperature must not exceed 260°C for ≤30 seconds, with ramp rates ≤3°C/s pre- and post-peak. Moisture sensitivity level is MSL1, eliminating bake requirements prior to assembly.

How does the current gain matching between Q1 and Q2 impact differential circuit performance?

While Q1 and Q2 are manufactured on the same die, their hFE ranges differ slightly (NPN: 200–470; PNP: 200–470 for IC = –2mA, but 330–470 for IC = –2.0mA). In matched-pair applications like current mirrors, gain mismatch introduces <±8% error in mirrored current at 25°C. For critical matching, designers should bin devices or use on-chip trimming in adjacent ICs rather than rely on inherent symmetry.

DST847BPDP6-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
SOT-963
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
1 NPN, 1 PNP
Current - Collector (Ic) (Max):
100mA
Voltage - Collector Emitter Breakdown (Max):
45V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 5mA, 100mA / 500mV @ 5mA, 100mA
Current - Collector Cutoff (Max):
15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 2mA, 5V
Power - Max:
250mW
Frequency - Transition:
175MHz, 340MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-963

DST847BPDP6-7 FAQ

1.How can I place an order for DST847BPDP6-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DST847BPDP6-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DST847BPDP6-7 reliable?

The price and inventory of DST847BPDP6-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DST847BPDP6-7 is usually 5 days.

3.What payment methods are accepted for DST847BPDP6-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DST847BPDP6-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DST847BPDP6-7?

DST847BPDP6-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DST847BPDP6-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DST847BPDP6-7?

For technical support, including DST847BPDP6-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DST847BPDP6-7 requirements.

6.How does Aetrix verify that DST847BPDP6-7 is sourced from the original manufacturer or authorized distributors?

All DST847BPDP6-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DST847BPDP6-7 meets industry standards.

7.What is the process for return or replacement of DST847BPDP6-7?

All DST847BPDP6-7 units undergo pre-shipment inspection (PSI). If there is an issue with DST847BPDP6-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DST847BPDP6-7 part is unused and in its original packaging.

Return procedure for DST847BPDP6-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DST847BPDP6-7 Tags

  • DST847BPDP6-7
  • DST847BPDP6-7 PDF
  • DST847BPDP6-7 Datasheet
  • DST847BPDP6-7 Specifications
  • DST847BPDP6-7 Images
  • Diodes Incorporated
  • Diodes Incorporated DST847BPDP6-7
  • Buy DST847BPDP6-7
  • DST847BPDP6-7 Price
  • DST847BPDP6-7 Distributor
  • DST847BPDP6-7 Supplier
  • DST847BPDP6-7 Wholesale
Related Products
MBT3946DW1T1G
MBT3946DW1T1G

onsemi

BC846BPDW1T1G
BC846BPDW1T1G

onsemi

MBT2222ADW1T1G
MBT2222ADW1T1G

onsemi

BC847BDW1T1G
BC847BDW1T1G

onsemi

DMMT5401-7-F
DMMT5401-7-F

Diodes Incorporated

DMMT5551-7-F
DMMT5551-7-F

Diodes Incorporated

DMMT3904W-7-F
DMMT3904W-7-F

Diodes Incorporated

DMMT3906W-7-F
DMMT3906W-7-F

Diodes Incorporated

FMB3904
FMB3904

onsemi

FMB2222A
FMB2222A

onsemi

ULQ2003D1013TR
ULQ2003D1013TR

STMicroelectronics

ZXTD4591E6TA
ZXTD4591E6TA

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER