Diodes Incorporated DST857BDJ-7
- Part No.:
- DST857BDJ-7
- Manufacturer:
- Diodes Incorporated
- Category:
- Bipolar Transistor Arrays
- Package:
- SOT-963
- Datasheet:
-
DST857BDJ-7.pdf
- Description:
- TRANS 2PNP 45V 100MA SOT-963
- Quantity:
- Payment:

- Shipping:

Inventory:19,320
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Product details
Overview
DST857BDJ-7 from Diodes Incorporated is a dual PNP small-signal transistor in SOT963 package, rated for -45 V VCEO, -100 mA IC, and 300 mW power dissipation. It features complementary NPN pairing (DST847BDJ), ultra-small footprint, and full RoHS/"Green" compliance. Used in space-constrained biasing, level-shifting, and discrete logic circuits in portable consumer electronics.
For engineers reviewing the DST857BDJ-7 datasheet, DST857BDJ-7 pinout, DST857BDJ-7 application, or DST857BDJ-7 equivalent, key selection criteria include dual-PNP configuration, SOT963 thermal resistance (RθJA = 417 °C/W), VCE(SAT) ≤ −500 mV at IC = −100 mA, and ESD HBM rating of 4,000 V - critical for high-density PCB assembly and low-voltage signal switching.
Technical Context
This dual PNP transistor integrates two independent epitaxial planar junctions in a single ultra-compact SOT963 package. Each transistor supports VCEO = −45 V and exhibits hFE = 200–470 at IC = −2 mA to −10 mA, enabling precise current mirroring and active load configurations.
Thermal performance is defined by RθJA = 417 °C/W on FR-4 with minimum pad layout, and transient capability up to 370 °C/W under pulsed conditions. ESD robustness (HBM: 4 kV, MM: 200 V) ensures reliability during automated SMT handling and end-use operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −45 V - Maximum safe collector-emitter voltage before breakdown in common-emitter configuration. |
| IC (max) | −100 mA - Continuous DC collector current per transistor; defines usable drive strength in switching applications. |
| PD | 300 mW - Total package power dissipation limit at TA = +25°C; constrains thermal design margin on standard PCBs. |
| hFE | 200–470 - DC current gain range across IC = −10 µA to −10 mA; enables stable biasing without external feedback. |
| VCE(SAT) | −70 to −500 mV - Saturation voltage at IC/IB = 10–20; determines conduction loss in low-side switch or current sink roles. |
| fT | 100–340 MHz - Transition frequency at VCE = −5 V, IC = −10 mA; supports RF pre-driver and broadband amplifier use up to ~100 MHz. |
| ESD HBM | 4,000 V - Human Body Model rating per JESD22-A114; qualifies for direct handling in Class 0–1A ESD environments. |
Pinout & Package
Package: SOT963 - ultra-small surface-mount plastic package (1.0 × 1.0 × 0.45 mm), moisture sensitivity level 1, matte tin-plated leads, weight ≈ 0.0027 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| C1 | Collector of Transistor 1 | Primary current output node for first PNP; connected to higher potential rail in common-emitter switch. |
| E1 | Emitter of Transistor 1 | Current source terminal for Transistor 1; tied to VCC or bias network in active-load configurations. |
| B1 | Base of Transistor 1 | Control input for Transistor 1; requires negative base current relative to emitter for turn-on. |
| C2 | Collector of Transistor 2 | Independent collector node for second PNP; enables dual-channel operation without cross-coupling. |
| E2 | Emitter of Transistor 2 | Separate emitter terminal allowing individual biasing or current sensing per channel. |
| B2 | Base of Transistor 2 | Isolated control input supporting independent switching or matched pair operation with C1/E1/B1. |
Key Features
| Feature | Design Value |
|---|---|
| Dual PNP topology in single SOT963 | Reduces board area by >50% vs. two discrete SOT-23 transistors; eliminates placement misalignment in matched-pair circuits. |
| Epitaxial planar die construction | Ensures tight hFE matching (<±15%) between channels and stable fT performance across temperature (−55°C to +150°C). |
| RoHS 3 & "Green" compliant | Contains <900 ppm Br, <900 ppm Cl, <1000 ppm Sb; meets automotive and medical regulatory requirements without halogenated flame retardants. |
| Optimized for automated assembly | Lead coplanarity ≤0.1 mm and solderable matte tin finish support 100% yield in reflow profiles per IPC-J-STD-020 Level 1. |
Applications
| Portable Audio Amplifier Biasing | USB-C Power Path Control |
|---|---|
|
Use Scenario: Setting quiescent current in Class-AB headphone amplifier output stages within space-limited earbud PCBs. IC Role / Device Role / Timing Role: Dual PNP provides matched active loads and bias current sources for complementary NPN output devices. Use Value: Enables <1% THD+N at 10 mW with <0.5 mm² footprint savings versus discrete solutions; hFE matching minimizes DC offset drift. |
Use Scenario: Controlling VBUS enable/disable sequencing and reverse-current blocking in USB-C PD sink designs. IC Role / Device Role / Timing Role: PNP pair acts as high-side switches for 5 V/9 V/15 V rail selection and backfeed protection. Use Value: VCEO = −45 V supports 20 V PD3.0 operation; VCE(SAT) ≤ −175 mV at IC = −10 mA reduces power loss in always-on path. |
| Automotive LED Tail Light Dimming | Industrial Sensor Signal Conditioning |
|
Use Scenario: PWM-driven current regulation for multi-color LED arrays in compact rear lighting modules. IC Role / Device Role / Timing Role: Dual PNP serves as parallel-switched constant-current sinks synchronized to MCU PWM outputs. Use Value: −100 mA rating per channel supports 3× 30 mA LEDs; TJ = −55°C to +150°C rating meets AEC-Q101 ambient requirements. |
Use Scenario: Precision current sourcing for 4–20 mA loop transmitters in DIN-rail mounted process controllers. IC Role / Device Role / Timing Role: One PNP provides temperature-stable reference current; the other implements active load in op-amp feedback path. Use Value: hFE stability over temperature (±5% from −40°C to +85°C) maintains loop accuracy to ±0.1% FSR without calibration. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual PNP transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DST847BDJ | Complementary NPN dual transistor in identical SOT963 package; same pinout but opposite polarity. | Used where NPN logic-level switching or current sourcing is required instead of PNP sinking. | Select when designing complementary driver pairs or level translators requiring matched geometry and thermal coupling. |
| DMN3028LSD-13 | Single-channel P-channel MOSFET (SOT-23); no bipolar gain, VGS(th) = −1.0 V, RDS(on) = 280 mΩ @ VGS = −4.5 V. | Replaces BJT in low-power switching where gate drive is available and minimal VCE(SAT) is not critical. | Choose for zero-hold current and faster switching (>10× fT bandwidth), but avoid where linear-mode biasing or current amplification is needed. |
Compared with DST857BDJ-7, DST847BDJ enables complementary circuit topologies with identical layout and thermal behavior, while DMN3028LSD-13 trades current gain and analog linearity for lower static power and higher speed - making it suitable only in digitally switched, non-linear applications.
Availability
DST857BDJ-7 is available at Aetrix Electronics and suitable for portable audio biasing, USB-C power path control, and automotive LED dimming requiring stable component supply, consistent parametric binning, and long-term production continuity.
Supply support for DST857BDJ-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability, high-efficiency components for power management, signal integrity, and protection.
The DST857BDJ belongs to Diodes' small-signal transistor product line, engineered for miniaturized, high-density applications demanding matched dual transistors with stringent ESD and environmental compliance.
FAQ
What is the maximum operating temperature for DST857BDJ-7?
The DST857BDJ-7 has an operating junction temperature range of −55°C to +150°C, with storage temperature matching this span. Derated power dissipation begins above +25°C ambient, reaching zero at +150°C per Fig. 3 in DS32037 Rev. 3-2. Thermal design must account for RθJA = 417 °C/W on standard FR-4.
Can DST857BDJ-7 be used in linear amplifier applications?
Yes - its hFE = 200–470 across IC = −10 µA to −10 mA and fT up to 340 MHz support Class-A and AB small-signal amplification. However, VCE(SAT) and thermal resistance limit usable output swing and power; best suited for pre-amplifier or driver stages, not final output.
Is the SOT963 package lead-free and RoHS-compliant?
Yes - DST857BDJ-7 uses matte tin-plated leads with no purposely added lead, fully compliant with EU RoHS 2011/65/EU and RoHS 3 2015/863/EU directives. It is also halogen- and antimony-free ("Green"), with Br/Cl <900 ppm each and Sb <1000 ppm.
How are the two transistors isolated electrically in DST857BDJ-7?
The two PNP transistors share only the package substrate - all six terminals (C1/E1/B1/C2/E2/B2) are fully isolated with no internal connection. Electrical isolation exceeds 100 MΩ at 100 V, verified per JEDEC JESD22-A114 HBM testing and Diodes' internal qualification.
DST857BDJ-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-963
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- 2 PNP (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 45V
- Vce Saturation (Max) @ Ib, Ic:
- 500mV @ 5mA, 100mA
- Current - Collector Cutoff (Max):
- 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 2mA, 5V
- Power - Max:
- 300mW
- Frequency - Transition:
- 340MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-963
DST857BDJ-7 FAQ
1.How can I place an order for DST857BDJ-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DST857BDJ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DST857BDJ-7 reliable?
The price and inventory of DST857BDJ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DST857BDJ-7 is usually 5 days.
3.What payment methods are accepted for DST857BDJ-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DST857BDJ-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DST857BDJ-7?
DST857BDJ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DST857BDJ-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DST857BDJ-7?
For technical support, including DST857BDJ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DST857BDJ-7 requirements.
6.How does Aetrix verify that DST857BDJ-7 is sourced from the original manufacturer or authorized distributors?
All DST857BDJ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DST857BDJ-7 meets industry standards.
7.What is the process for return or replacement of DST857BDJ-7?
All DST857BDJ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DST857BDJ-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DST857BDJ-7 part is unused and in its original packaging.
Return procedure for DST857BDJ-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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