Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DST857BDJ-7

Part No.:
DST857BDJ-7
Manufacturer:
Diodes Incorporated
Category:
Bipolar Transistor Arrays
Package:
SOT-963
Datasheet:
AetrixDST857BDJ-7.pdf
Description:
TRANS 2PNP 45V 100MA SOT-963
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:19,320

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DST857BDJ-7 from Diodes Incorporated is a dual PNP small-signal transistor in SOT963 package, rated for -45 V VCEO, -100 mA IC, and 300 mW power dissipation. It features complementary NPN pairing (DST847BDJ), ultra-small footprint, and full RoHS/"Green" compliance. Used in space-constrained biasing, level-shifting, and discrete logic circuits in portable consumer electronics.

For engineers reviewing the DST857BDJ-7 datasheet, DST857BDJ-7 pinout, DST857BDJ-7 application, or DST857BDJ-7 equivalent, key selection criteria include dual-PNP configuration, SOT963 thermal resistance (RθJA = 417 °C/W), VCE(SAT) ≤ −500 mV at IC = −100 mA, and ESD HBM rating of 4,000 V - critical for high-density PCB assembly and low-voltage signal switching.

Technical Context

This dual PNP transistor integrates two independent epitaxial planar junctions in a single ultra-compact SOT963 package. Each transistor supports VCEO = −45 V and exhibits hFE = 200–470 at IC = −2 mA to −10 mA, enabling precise current mirroring and active load configurations.

Thermal performance is defined by RθJA = 417 °C/W on FR-4 with minimum pad layout, and transient capability up to 370 °C/W under pulsed conditions. ESD robustness (HBM: 4 kV, MM: 200 V) ensures reliability during automated SMT handling and end-use operation.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO −45 V - Maximum safe collector-emitter voltage before breakdown in common-emitter configuration.
IC (max) −100 mA - Continuous DC collector current per transistor; defines usable drive strength in switching applications.
PD 300 mW - Total package power dissipation limit at TA = +25°C; constrains thermal design margin on standard PCBs.
hFE 200–470 - DC current gain range across IC = −10 µA to −10 mA; enables stable biasing without external feedback.
VCE(SAT) −70 to −500 mV - Saturation voltage at IC/IB = 10–20; determines conduction loss in low-side switch or current sink roles.
fT 100–340 MHz - Transition frequency at VCE = −5 V, IC = −10 mA; supports RF pre-driver and broadband amplifier use up to ~100 MHz.
ESD HBM 4,000 V - Human Body Model rating per JESD22-A114; qualifies for direct handling in Class 0–1A ESD environments.

Pinout & Package

Package: SOT963 - ultra-small surface-mount plastic package (1.0 × 1.0 × 0.45 mm), moisture sensitivity level 1, matte tin-plated leads, weight ≈ 0.0027 g.

Pin/Terminal Circuit Role Design Meaning
C1 Collector of Transistor 1 Primary current output node for first PNP; connected to higher potential rail in common-emitter switch.
E1 Emitter of Transistor 1 Current source terminal for Transistor 1; tied to VCC or bias network in active-load configurations.
B1 Base of Transistor 1 Control input for Transistor 1; requires negative base current relative to emitter for turn-on.
C2 Collector of Transistor 2 Independent collector node for second PNP; enables dual-channel operation without cross-coupling.
E2 Emitter of Transistor 2 Separate emitter terminal allowing individual biasing or current sensing per channel.
B2 Base of Transistor 2 Isolated control input supporting independent switching or matched pair operation with C1/E1/B1.

Key Features

Feature Design Value
Dual PNP topology in single SOT963 Reduces board area by >50% vs. two discrete SOT-23 transistors; eliminates placement misalignment in matched-pair circuits.
Epitaxial planar die construction Ensures tight hFE matching (<±15%) between channels and stable fT performance across temperature (−55°C to +150°C).
RoHS 3 & "Green" compliant Contains <900 ppm Br, <900 ppm Cl, <1000 ppm Sb; meets automotive and medical regulatory requirements without halogenated flame retardants.
Optimized for automated assembly Lead coplanarity ≤0.1 mm and solderable matte tin finish support 100% yield in reflow profiles per IPC-J-STD-020 Level 1.

Applications

Portable Audio Amplifier Biasing USB-C Power Path Control

Use Scenario: Setting quiescent current in Class-AB headphone amplifier output stages within space-limited earbud PCBs.

IC Role / Device Role / Timing Role: Dual PNP provides matched active loads and bias current sources for complementary NPN output devices.

Use Value: Enables <1% THD+N at 10 mW with <0.5 mm² footprint savings versus discrete solutions; hFE matching minimizes DC offset drift.

Use Scenario: Controlling VBUS enable/disable sequencing and reverse-current blocking in USB-C PD sink designs.

IC Role / Device Role / Timing Role: PNP pair acts as high-side switches for 5 V/9 V/15 V rail selection and backfeed protection.

Use Value: VCEO = −45 V supports 20 V PD3.0 operation; VCE(SAT) ≤ −175 mV at IC = −10 mA reduces power loss in always-on path.

Automotive LED Tail Light Dimming Industrial Sensor Signal Conditioning

Use Scenario: PWM-driven current regulation for multi-color LED arrays in compact rear lighting modules.

IC Role / Device Role / Timing Role: Dual PNP serves as parallel-switched constant-current sinks synchronized to MCU PWM outputs.

Use Value: −100 mA rating per channel supports 3× 30 mA LEDs; TJ = −55°C to +150°C rating meets AEC-Q101 ambient requirements.

Use Scenario: Precision current sourcing for 4–20 mA loop transmitters in DIN-rail mounted process controllers.

IC Role / Device Role / Timing Role: One PNP provides temperature-stable reference current; the other implements active load in op-amp feedback path.

Use Value: hFE stability over temperature (±5% from −40°C to +85°C) maintains loop accuracy to ±0.1% FSR without calibration.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual PNP transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
DST847BDJ Complementary NPN dual transistor in identical SOT963 package; same pinout but opposite polarity. Used where NPN logic-level switching or current sourcing is required instead of PNP sinking. Select when designing complementary driver pairs or level translators requiring matched geometry and thermal coupling.
DMN3028LSD-13 Single-channel P-channel MOSFET (SOT-23); no bipolar gain, VGS(th) = −1.0 V, RDS(on) = 280 mΩ @ VGS = −4.5 V. Replaces BJT in low-power switching where gate drive is available and minimal VCE(SAT) is not critical. Choose for zero-hold current and faster switching (>10× fT bandwidth), but avoid where linear-mode biasing or current amplification is needed.

Compared with DST857BDJ-7, DST847BDJ enables complementary circuit topologies with identical layout and thermal behavior, while DMN3028LSD-13 trades current gain and analog linearity for lower static power and higher speed - making it suitable only in digitally switched, non-linear applications.

Availability

DST857BDJ-7 is available at Aetrix Electronics and suitable for portable audio biasing, USB-C power path control, and automotive LED dimming requiring stable component supply, consistent parametric binning, and long-term production continuity.

Supply support for DST857BDJ-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability, high-efficiency components for power management, signal integrity, and protection.

The DST857BDJ belongs to Diodes' small-signal transistor product line, engineered for miniaturized, high-density applications demanding matched dual transistors with stringent ESD and environmental compliance.

FAQ

What is the maximum operating temperature for DST857BDJ-7?

The DST857BDJ-7 has an operating junction temperature range of −55°C to +150°C, with storage temperature matching this span. Derated power dissipation begins above +25°C ambient, reaching zero at +150°C per Fig. 3 in DS32037 Rev. 3-2. Thermal design must account for RθJA = 417 °C/W on standard FR-4.

Can DST857BDJ-7 be used in linear amplifier applications?

Yes - its hFE = 200–470 across IC = −10 µA to −10 mA and fT up to 340 MHz support Class-A and AB small-signal amplification. However, VCE(SAT) and thermal resistance limit usable output swing and power; best suited for pre-amplifier or driver stages, not final output.

Is the SOT963 package lead-free and RoHS-compliant?

Yes - DST857BDJ-7 uses matte tin-plated leads with no purposely added lead, fully compliant with EU RoHS 2011/65/EU and RoHS 3 2015/863/EU directives. It is also halogen- and antimony-free ("Green"), with Br/Cl <900 ppm each and Sb <1000 ppm.

How are the two transistors isolated electrically in DST857BDJ-7?

The two PNP transistors share only the package substrate - all six terminals (C1/E1/B1/C2/E2/B2) are fully isolated with no internal connection. Electrical isolation exceeds 100 MΩ at 100 V, verified per JEDEC JESD22-A114 HBM testing and Diodes' internal qualification.

DST857BDJ-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
SOT-963
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
2 PNP (Dual)
Current - Collector (Ic) (Max):
100mA
Voltage - Collector Emitter Breakdown (Max):
45V
Vce Saturation (Max) @ Ib, Ic:
500mV @ 5mA, 100mA
Current - Collector Cutoff (Max):
15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 2mA, 5V
Power - Max:
300mW
Frequency - Transition:
340MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-963

DST857BDJ-7 FAQ

1.How can I place an order for DST857BDJ-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DST857BDJ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DST857BDJ-7 reliable?

The price and inventory of DST857BDJ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DST857BDJ-7 is usually 5 days.

3.What payment methods are accepted for DST857BDJ-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DST857BDJ-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DST857BDJ-7?

DST857BDJ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DST857BDJ-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DST857BDJ-7?

For technical support, including DST857BDJ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DST857BDJ-7 requirements.

6.How does Aetrix verify that DST857BDJ-7 is sourced from the original manufacturer or authorized distributors?

All DST857BDJ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DST857BDJ-7 meets industry standards.

7.What is the process for return or replacement of DST857BDJ-7?

All DST857BDJ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DST857BDJ-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DST857BDJ-7 part is unused and in its original packaging.

Return procedure for DST857BDJ-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DST857BDJ-7 Tags

  • DST857BDJ-7
  • DST857BDJ-7 PDF
  • DST857BDJ-7 Datasheet
  • DST857BDJ-7 Specifications
  • DST857BDJ-7 Images
  • Diodes Incorporated
  • Diodes Incorporated DST857BDJ-7
  • Buy DST857BDJ-7
  • DST857BDJ-7 Price
  • DST857BDJ-7 Distributor
  • DST857BDJ-7 Supplier
  • DST857BDJ-7 Wholesale
Related Products
MBT3946DW1T1G
MBT3946DW1T1G

onsemi

BC846BPDW1T1G
BC846BPDW1T1G

onsemi

MBT2222ADW1T1G
MBT2222ADW1T1G

onsemi

BC847BDW1T1G
BC847BDW1T1G

onsemi

DMMT5401-7-F
DMMT5401-7-F

Diodes Incorporated

DMMT5551-7-F
DMMT5551-7-F

Diodes Incorporated

DMMT3904W-7-F
DMMT3904W-7-F

Diodes Incorporated

DMMT3906W-7-F
DMMT3906W-7-F

Diodes Incorporated

FMB3904
FMB3904

onsemi

FMB2222A
FMB2222A

onsemi

ULQ2003D1013TR
ULQ2003D1013TR

STMicroelectronics

ZXTD4591E6TA
ZXTD4591E6TA

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER