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Diodes Incorporated DXTC3C100PD-13
- Part No.:
- DXTC3C100PD-13
- Manufacturer:
- Diodes Incorporated
- Category:
- Bipolar Transistor Arrays
- Package:
- 8-PowerTDFN
- Datasheet:
-
DXTC3C100PD-13.pdf
- Description:
- TRANS NPN/PNP 100V POWERDI5060-8
- Quantity:
- Payment:
- Shipping:
Inventory:4,357
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Product details
Overview
DXTC3C100PD-13 from Diodes Incorporated is a dual NPN/PNP low-saturation bipolar transistor pair in a single PowerDI5060-8/SWP (Type UXD) package, rated for 100V VCEO, 3A continuous collector current per device, and featuring RCE(SAT) of 90 mΩ (NPN) and 110 mΩ (PNP) at rated current - used in high-efficiency load switching and gate driving circuits for automotive and industrial power systems.
For engineers reviewing the DXTC3C100PD-13 datasheet, DXTC3C100PD-13 pinout, DXTC3C100PD-13 application, or DXTC3C100PD-13 equivalent, key selection criteria include verified dual-polarity saturation performance, thermal resistance (RθJA = 85 °C/W), AEC-Q101 readiness, and compatibility with high-current MOSFET/IGBT gate drive topologies requiring matched complementary switching.
Technical Context
This dual transistor integrates one NPN and one PNP die in a thermally optimized PowerDI5060-8 lead-frame package with exposed collector pads for low RθJL (5.7 °C/W). Each transistor supports independent biasing with separate base, emitter, and collector terminals - enabling push-pull, totem-pole, or complementary load-switch configurations without external isolation.
The device operates across –55°C to +150°C junction temperature, delivers fT of 130 MHz (NPN) and 100 MHz (PNP), and maintains stable hFE down to –55°C. Its 4 kV HBM ESD rating and halogen/antimony-free "Green" construction meet automotive-grade reliability requirements.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 100 V (NPN), –100 V (PNP): Enables direct interface with 48V and 60V bus systems without level-shifting. |
| IC (Cont.) | 3 A per transistor: Supports sustained 3A load switching or gate charging of 100 nC IGBTs at 100 kHz. |
| RCE(SAT) | 90 mΩ (NPN), 110 mΩ (PNP) at IC/IB = 20: Minimizes conduction loss to ≤330 mW at 3A, reducing heatsink requirements. |
| fT | 130 MHz (NPN), 100 MHz (PNP): Ensures fast switching with ton/toff ≤660 ns, suitable for >200 kHz PWM control. |
| RθJA | 85 °C/W (single-die active): Allows 1.47 W dissipation on 25 mm × 25 mm 1 oz Cu PCB - validated for automotive under-hood ambient. |
| ESD HBM | 4 kV: Provides robust handling during automated assembly and board-level integration without added protection circuitry. |
| Package | PowerDI5060-8/SWP (Type UXD): Exposed collector leads enable low-inductance, high-current routing and efficient thermal transfer to PCB copper. |
Pinout & Package
PowerDI5060-8/SWP (Type UXD) is a surface-mount, thermally enhanced 8-pin package with two exposed collector pads (C1, C2) and four signal terminals (B1, E1, B2, E2). The molded plastic case meets UL 94V-0 and J-STD-020 Level 1 moisture sensitivity standards.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| C1 | NPN Collector | Exposed copper pad; primary thermal and current path for NPN side - must be soldered to ≥25 mm² copper pour. |
| E1 | NPN Emitter | Low-impedance return path for NPN output; referenced to system ground in high-side switch configurations. |
| B1 | NPN Base | Control input for NPN; requires 300 mA peak drive at 3A IC to ensure full saturation and minimize storage time. |
| C2 | PNP Collector | Exposed copper pad; independent thermal path for PNP side - enables dual-channel thermal management. |
| E2 | PNP Emitter | High-side reference node; connects to positive rail in complementary load switches or totem-pole drivers. |
| B2 | PNP Base | Inverted control input; driven low to turn on PNP - compatible with standard logic-level gate drivers. |
Key Features
| Feature | Design Value |
|---|---|
| Complementary NPN/PNP Pair | Matched VCEO, IC, and RCE(SAT) enables symmetrical push-pull operation without external balancing components. |
| Low RCE(SAT) at High Current | 90 mΩ (NPN) / 110 mΩ (PNP) at 3A ensures <0.33 W conduction loss per device - reduces thermal stress in compact enclosures. |
| Thermally Optimized Package | Two isolated exposed collector pads provide independent heat sinking paths, lowering effective RθJA by up to 40% vs. SO-8 equivalents. |
| AEC-Q101 Qualified | Validated for automotive applications including engine control modules and body electronics - PPAP-capable with IATF 16949 manufacturing. |
| Halogen & Antimony Free | <900 ppm Br, <900 ppm Cl, <1000 ppm Sb - meets strict automotive environmental compliance (e.g., BMW GS 95024-3). |
Applications
| Automotive LED Headlamp Driver | Industrial DC Motor H-Bridge Control |
|---|---|
|
Use Scenario: Driving high-brightness LED arrays in adaptive front-lighting systems (AFS) with PWM dimming up to 2 kHz. IC Role / Device Role / Timing Role: NPN/PNP pair acts as synchronous high-side/low-side switch in buck-boost LED driver stage. Use Value: Low RCE(SAT) minimizes forward voltage drop and thermal rise during 2.5A steady-state LED current, extending optical module lifetime. |
Use Scenario: Controlling bidirectional 24V DC motors in factory automation actuators with regenerative braking. IC Role / Device Role / Timing Role: Forms half-bridge legs in discrete H-bridge; PNP handles high-side sourcing, NPN handles low-side sinking. Use Value: Matched switching speed (ton/toff ≤660 ns) prevents shoot-through during direction reversal at 10 kHz PWM frequency. |
| Server PSU OR-ing FET Controller | Smart Power Outlet Load Switch |
|
Use Scenario: Enabling redundant 12V power supplies in datacenter servers with automatic failover and reverse-current blocking. IC Role / Device Role / Timing Role: NPN drives gate of high-side N-channel MOSFET; PNP provides fast turn-off via active pull-down. Use Value: 130 MHz fT and 40 ns delay time allow sub-100 ns MOSFET gate control - critical for <1 µs fault response. |
Use Scenario: Solid-state replacement for electromechanical relays in smart home energy monitors and IoT power strips. IC Role / Device Role / Timing Role: PNP serves as high-side switch for 120VAC-derived 12V DC loads; NPN controls auxiliary status signaling. Use Value: 100V VCEO and –55°C to +150°C operation support wide-input AC/DC converters in uncontrolled ambient environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar complementary bipolar transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ZXTDM617000CTA | Higher VCEO (120 V), lower RCE(SAT) (65 mΩ NPN / 85 mΩ PNP), but larger SOT-23-8 footprint and higher RθJA (125 °C/W). | Better for 100V+ industrial motor drives where space allows; less suitable for thermally constrained automotive modules. | Select when absolute minimum conduction loss is prioritized over thermal density and AEC-Q101 qualification. |
| MBT3904DW1T1G | Lower voltage (40 V), lower current (200 mA), smaller SC-70-6 package; not rated for automotive or high-power use. | Limited to low-voltage logic-level signal switching - incompatible with 100V load switching or gate driving. | Only consider for cost-sensitive consumer electronics where voltage/current demands are ≤40 V / 200 mA. |
Compared with ZXTDM617000CTA and MBT3904DW1T1G, DXTC3C100PD-13 uniquely balances 100V capability, 3A current, automotive qualification, and thermally efficient PowerDI5060-8 packaging - making it the only option among the three qualified for under-hood automotive load switching.
Availability
DXTC3C100PD-13 is available at Aetrix Electronics and suitable for automotive lighting systems, industrial motor controllers, server power management, and smart energy infrastructure requiring stable component supply and long-term lifecycle assurance.
Supply support for DXTC3C100PD-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal devices for power management, signal integrity, and connectivity applications.
DXTC3C100PD belongs to Diodes' Power Transistor product line, engineered specifically for high-reliability, high-current complementary switching in automotive and industrial power systems where thermal efficiency and AEC-Q101 compliance are mandatory.
FAQ
What is the maximum allowable junction temperature for continuous operation?
The DXTC3C100PD-13 has an operating junction temperature range of –55°C to +150°C. For continuous operation at full 3A collector current, thermal design must ensure TJ remains ≤150°C - achievable with ≥25 mm² 1 oz copper on FR4 and ambient ≤85°C, based on RθJA = 85 °C/W and PD = 1.47 W.
Can this device replace a discrete NPN+PNP pair in an existing SO-8 layout?
No - the PowerDI5060-8/SWP (Type UXD) footprint differs significantly from SO-8: it uses two large exposed collector pads (C1/C2) and eight terminals in a 5.15 mm × 6.40 mm outline with 1.27 mm pitch. Pad layout must follow Diodes' recommended land pattern (Document DS43419, Page 10), not SO-8 templates.
Is the DXTC3C100PD-13 qualified for automotive applications?
Yes - Diodes specifies that DXTC3C100PD is designed for automotive applications requiring AEC-Q101 qualification, PPAP capability, and manufacturing in IATF 16949 certified facilities. Full qualification documentation is available upon request through Diodes' automotive support team.
How does the dual-die thermal structure affect PCB layout?
The independent C1 and C2 exposed pads require separate thermal vias and copper pours - each must connect to ≥25 mm² dedicated copper area with ≥6 thermal vias (0.3 mm diameter, 0.8 mm pitch) to achieve specified RθJA. Sharing a common thermal plane between C1 and C2 degrades RθJA by up to 35% and risks thermal crosstalk during asymmetric loading.
DXTC3C100PD-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- 1 NPN, 1 PNP
- Current - Collector (Ic) (Max):
- 3A
- Voltage - Collector Emitter Breakdown (Max):
- 100V
- Vce Saturation (Max) @ Ib, Ic:
- 330mV @ 300mA, 3A / 325mV @ 200mA, 2A
- Current - Collector Cutoff (Max):
- 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 150 @ 500mA, 10V / 170 @ 500mA, 10V
- Power - Max:
- 1.47W
- Frequency - Transition:
- 130MHz, 100MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI5060-8 (Type UXD)
DXTC3C100PD-13 FAQ
1.How can I place an order for DXTC3C100PD-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DXTC3C100PD-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DXTC3C100PD-13 reliable?
The price and inventory of DXTC3C100PD-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DXTC3C100PD-13 is usually 5 days.
3.What payment methods are accepted for DXTC3C100PD-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DXTC3C100PD-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DXTC3C100PD-13?
DXTC3C100PD-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DXTC3C100PD-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DXTC3C100PD-13?
For technical support, including DXTC3C100PD-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DXTC3C100PD-13 requirements.
6.How does Aetrix verify that DXTC3C100PD-13 is sourced from the original manufacturer or authorized distributors?
All DXTC3C100PD-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DXTC3C100PD-13 meets industry standards.
7.What is the process for return or replacement of DXTC3C100PD-13?
All DXTC3C100PD-13 units undergo pre-shipment inspection (PSI). If there is an issue with DXTC3C100PD-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DXTC3C100PD-13 part is unused and in its original packaging.
Return procedure for DXTC3C100PD-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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