Diodes Incorporated DXTN3C100PD-13

Overview

DXTN3C100PD from Diodes Incorporated is a dual NPN low-saturation transistor in PowerDI5060-8 package, rated for 100V V_CEO, 3A continuous collector current, and 90mΩ typical R_CE(sat) at I_C = 1A/ I_B = 50mA - deployed in linear-mode voltage regulators and automotive motor drive stages where high-voltage switching with minimal conduction loss is required.

For engineers reviewing the DXTN3C100PD datasheet, DXTN3C100PD pinout, DXTN3C100PD application, or DXTN3C100PD equivalent, key selection criteria include verified 100V breakdown margin, dual-die thermal coupling behavior, R_CE(sat) stability across -55°C to +150°C, and compatibility with AEC-Q101-qualified production flows for under-hood power management.

Technical Context

This dual NPN transistor integrates two matched silicon die in a single thermally efficient PowerDI5060-8/SWP (Type UXD) leadframe package, enabling synchronous or complementary switching without inter-device timing skew. Each die supports independent base drive with shared thermal path to the collector leads.

It operates in linear mode with guaranteed h_FE ≥ 20 at I_C = 2A/V_CE = 10V and exhibits f_T = 130MHz, supporting fast-switching control loops in active-pass element configurations. ESD robustness includes 4kV HBM and 400V MM ratings per JEDEC standards.

Key Specifications

Pinout & Package

Package: PowerDI5060-8/SWP (Type UXD), surface-mount, thermally enhanced molded plastic case with matte tin–annealed copper leadframe; UL 94V-0 rated, MSL Level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual NPN low-saturation transistor applications.

Compared with DXTP3C100PD and ZXTN2010ZTA, DXTN3C100PD uniquely delivers dual-channel 100V/3A capability with matched die characteristics and superior thermal coupling - essential for high-reliability linear regulation and motor drive where channel synchronization and thermal tracking are design-critical.

Availability

DXTN3C100PD is available at Aetrix Electronics and suitable for automotive motor drive, linear-mode voltage regulators, backlighting applications, and industrial power management requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for DXTN3C100PD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and consumer markets.

The DXTN3C100PD belongs to Diodes' Power Transistor product line, engineered specifically for high-voltage linear and switching applications demanding low saturation, thermal robustness, and AEC-Q101 readiness in compact surface-mount packages.

FAQ

What is the maximum allowable junction temperature for DXTN3C100PD?

The absolute maximum junction temperature is +150°C, with continuous operation supported from –55°C to +150°C. Derating begins at +25°C ambient per the 11.76 mW/°C linear derating factor, and thermal resistance to lead (R_θJL) is 5.7°C/W - enabling precise junction temperature estimation using measured lead temperature.

Can DXTN3C100PD be used in parallel configurations across both NPN channels?

Yes - the matched dual-die construction ensures ≤5% h_FE mismatch and tightly coupled thermal behavior, allowing safe parallel operation without external emitter resistors. However, independent base drive with matched current-limiting networks is required to prevent current hogging during transient conditions.

Is DXTN3C100PD qualified to AEC-Q101?

While the device is manufactured in IATF 16949-certified facilities and supports PPAP documentation, official AEC-Q101 qualification is not pre-certified for this part number. Customers requiring formal qualification must initiate a specific AEC-Q101 test program with Diodes Incorporated prior to production release.

What is the recommended PCB pad layout for thermal performance?

Diodes specifies a dedicated thermal pad layout for PowerDI5060-8/SWP: 4.42mm × 3.81mm exposed copper area connected to internal ground/power planes via ≥4 thermal vias (0.3mm diameter, 0.7mm pitch). Full layout dimensions and stencil recommendations are published in Diodes' package outline document #AP02013.