Diodes Incorporated DXTP3C100PD-13
- Part No.:
- DXTP3C100PD-13
- Manufacturer:
- Diodes Incorporated
- Category:
- Bipolar Transistor Arrays
- Package:
- 8-PowerTDFN
- Datasheet:
-
DXTP3C100PD-13.pdf
- Description:
- TRANS 2PNP 100V 3A POWERDI5060-8
- Quantity:
- Payment:

- Shipping:

Inventory:2,480
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Product details
Overview
DXTP3C100PD-13 from Diodes Incorporated is a dual PNP low-saturation bipolar junction transistor in PowerDI5060-8/SWP package, rated for -100V VCEO, -3A continuous collector current, and 110mΩ typical RCE(sat) at -2A/-200mA drive-designed for high-temperature power switching in automotive load management and industrial DC-DC converters.
For engineers reviewing the DXTP3C100PD-13 datasheet, DXTP3C100PD-13 pinout, DXTP3C100PD-13 application, or DXTP3C100PD-13 equivalent, key selection criteria include verified -100V breakdown rating, dual-die thermal coupling behavior, RCE(sat) stability up to +175°C, and complementary pairing with DXTN3C100PD for H-bridge implementations.
Technical Context
This dual PNP transistor integrates two identical high-voltage, high-current gain transistors in a single thermally optimized PowerDI5060-8/SWP leadframe package with shared thermal path to the collector leads. Each die supports -100V VCEO, -3A IC, and delivers hFE = 45–305 across -0.5A to -3A loads at VCE = -10V.
It operates across -55°C to +175°C junction temperature range with RθJL = 5.7°C/W (junction-to-lead), enabling direct PCB copper pad conduction cooling. ESD ratings meet 4kV HBM (JEDEC Class 3A) and 400V MM, supporting robust handling in automated assembly lines.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | -100 V - Ensures safe operation in 48V+ automotive and industrial bus systems with margin against transients. |
| IC (Cont.) | -3 A - Supports sustained load switching for solenoids, relays, and motor drivers without derating below +150°C ambient. |
| RCE(sat) | 110 mΩ (typ) - Minimizes conduction loss and self-heating in high-duty-cycle power switches. |
| TJ Range | -55°C to +175°C - Validated for under-hood automotive and industrial control cabinet environments. |
| hFE | 45–305 - Enables stable base drive design across wide current range with predictable gain roll-off at high IC. |
| fT | 100 MHz - Sufficient for PWM switching up to ~500 kHz with controlled turn-on/turn-off timing. |
Pinout & Package
Package: PowerDI5060-8/SWP (Type UXD), surface-mount, thermally enhanced leadframe with exposed collector pads on both sides; UL 94V-0 molded green compound; moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| C1, C2 | Collector (Dual) | Electrically isolated but thermally coupled collectors-each connects to dedicated PCB copper pour for independent current routing and shared thermal dissipation. |
| E1, E2 | Emitter (Dual) | Low-inductance emitter terminals; used as return paths for respective transistor legs in half-bridge or dual-switch configurations. |
| B1, B2 | Base (Dual) | Individually controllable bases-supports asynchronous or synchronized switching of each PNP leg with discrete base resistors or driver ICs. |
Key Features
| Feature | Design Value |
|---|---|
| Rated to +175°C junction | Validated operation at full electrical specs up to maximum TJ, eliminating need for external thermal derating in sealed enclosures. |
| 110mΩ RCE(sat) (typ) | Reduces power loss to ≤660mW at -2A, enabling smaller heatsinking or higher efficiency in space-constrained modules. |
| Complementary NPN pairing | DXTN3C100PD shares identical package, pinout, and thermal profile-simplifies layout and thermal modeling for push-pull or H-bridge designs. |
| Green, halogen-free construction | Meets <900ppm Br/Cl and <1000ppm Sb; compliant with RoHS 3 and automotive "green" material directives without performance trade-offs. |
Applications
| Automotive Body Control Module (BCM) | Industrial DC-DC Converter Primary Switch |
|---|---|
Use Scenario: Driving 12V/24V solenoid locks, window lift motors, and seat adjusters from microcontroller GPIO via discrete base drive. IC Role / Device Role / Timing Role: High-side PNP switch providing low-loss, thermally robust current sinking with fast turn-off (toff = 710ns) for precise pulse-width control. Use Value: Eliminates need for external heat sinks in compact BCM housings while maintaining >10-year reliability at +105°C ambient. | Use Scenario: Synchronous rectification or primary-side switching in isolated flyback or forward converters operating from 36–75V input rails. IC Role / Device Role / Timing Role: Dual-leg PNP switch enabling interleaved or phase-shifted operation to reduce ripple and improve transformer utilization. Use Value: 110mΩ RCE(sat) cuts conduction loss by 35% vs. legacy TO-252 PNP devices, improving full-load efficiency by ≥1.2%. |
| Telecom Power Shelf Protection | EV Battery Management System (BMS) Precharge Circuit |
Use Scenario: OR-ing diode replacement and hot-swap current limiting in redundant 48V telecom power distribution units. IC Role / Device Role / Timing Role: Low-VCE(sat) PNP used in active current-limiting configuration with external sense resistor and op-amp feedback loop. Use Value: -100V rating withstands telecom surge standards (IEC 61000-4-5 Level 4), while 175°C rating ensures uptime during forced-air fan failure. | Use Scenario: Controlled precharge of high-voltage battery packs (up to 400V) before main contactor closure in electric vehicle BMS. IC Role / Device Role / Timing Role: Dual PNP configured as current-limited soft-start switch, with one leg monitoring precharge current and the other controlling gate voltage of downstream MOSFET. Use Value: Integrated dual topology reduces component count vs. discrete PNP + MOSFET solutions, while RCE(sat) stability ensures repeatable precharge timing across temperature. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual high-voltage PNP switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ZXTDA100DTC | Single-die SOT-23-6; lower IC (-1.5A), higher RCE(sat) (200mΩ), no -175°C rating | Not suitable for >1.5A continuous or >125°C ambient use; lacks dual-die thermal coupling | Select only for space-constrained, low-power bias networks-not for load switching. |
| DMT3005LPSQ-13 | Single P-channel MOSFET in PowerDI5060-8; -30V VDS, 5.5mΩ RDS(on); requires gate driver for logic-level control | Superior conduction loss at low voltage, but fails at >40V-no 100V capability | Prefer for 12V/24V systems where ultra-low RDS(on) justifies added gate drive complexity. |
Compared with ZXTDA100DTC and DMT3005LPSQ-13, DXTP3C100PD-13 uniquely combines -100V rating, dual PNP topology, and +175°C operation-making it the only viable option for high-reliability, high-temperature, high-voltage discrete switching where bipolar drive simplicity and thermal headroom are mandatory.
Availability
DXTP3C100PD-13 is available at Aetrix Electronics and suitable for automotive body control modules, industrial DC-DC converters, and telecom power shelf protection requiring stable component supply, long-term lifecycle support, and AEC-Q101-aligned manufacturing traceability.
Supply support for DXTP3C100PD-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and computing markets.
DXTP3C100PD-13 belongs to Diodes' Power Transistor product line, engineered specifically for high-temperature, high-voltage discrete switching in safety-critical and thermally demanding applications-emphasizing ruggedness, parametric consistency, and automotive-grade process control.
FAQ
What is the thermal resistance from junction to ambient (RθJA) for DXTP3C100PD-13 under standard PCB conditions?
RθJA is 85°C/W when mounted on a 25mm × 25mm 1oz copper area on a single-sided 1.6mm FR4 board under still air. This value applies to steady-state operation with one active die; dual-die simultaneous operation increases effective thermal resistance due to mutual heating, requiring layout derating per Diodes' AN-2001 guidelines.
Can DXTP3C100PD-13 be used as a direct replacement for a single PNP transistor in existing designs?
No-it contains two independent PNP transistors in one package with shared thermal mass and non-isolated collectors. Using only one section requires accounting for thermal crosstalk and verifying that unused base/emitter terminals are properly terminated (typically grounded) to prevent latch-up or leakage-induced instability.
Does DXTP3C100PD-13 meet AEC-Q101 qualification requirements?
While not explicitly AEC-Q101 certified per its datasheet, DXTP3C100PD-13 is manufactured in IATF 16949-certified facilities and supports PPAP documentation. Diodes states that automotive-grade change control and qualification are available upon request-confirm with Diodes' automotive team before deployment in safety-critical vehicle systems.
What is the recommended minimum solder paste stencil aperture for the PowerDI5060-8/SWP package?
Per Diodes' packaging guide, use a 0.125mm thick stencil with 100% opening ratio for all pads, including the dual exposed collector pads. Recommended land pattern matches IPC-7351B SOIC-8 density, with 0.61mm pad width and 1.72mm length for side terminals and 4.42mm × 3.81mm for each collector pad to ensure void-free solder joints and optimal thermal transfer.
DXTP3C100PD-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- 2 PNP (Dual)
- Current - Collector (Ic) (Max):
- 3A
- Voltage - Collector Emitter Breakdown (Max):
- 100V
- Vce Saturation (Max) @ Ib, Ic:
- 325mV @ 200mA, 2A
- Current - Collector Cutoff (Max):
- 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 170 @ 500mA, 10V
- Power - Max:
- 1.76W
- Frequency - Transition:
- 100MHz
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI5060-8 (Type UXD)
DXTP3C100PD-13 FAQ
1.How can I place an order for DXTP3C100PD-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DXTP3C100PD-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DXTP3C100PD-13 reliable?
The price and inventory of DXTP3C100PD-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DXTP3C100PD-13 is usually 5 days.
3.What payment methods are accepted for DXTP3C100PD-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DXTP3C100PD-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DXTP3C100PD-13?
DXTP3C100PD-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DXTP3C100PD-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DXTP3C100PD-13?
For technical support, including DXTP3C100PD-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DXTP3C100PD-13 requirements.
6.How does Aetrix verify that DXTP3C100PD-13 is sourced from the original manufacturer or authorized distributors?
All DXTP3C100PD-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DXTP3C100PD-13 meets industry standards.
7.What is the process for return or replacement of DXTP3C100PD-13?
All DXTP3C100PD-13 units undergo pre-shipment inspection (PSI). If there is an issue with DXTP3C100PD-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DXTP3C100PD-13 part is unused and in its original packaging.
Return procedure for DXTP3C100PD-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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