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Infineon Technologies DZ3600S17K3B2NOSA1
- Part No.:
- DZ3600S17K3B2NOSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Diode Arrays
- Package:
- Module
- Datasheet:
-
DZ3600S17K3B2NOSA1.pdf
- Description:
- DIODE MODULE GP 1700V AIHM190-1
- Quantity:
- Payment:
- Shipping:
Inventory:5,179
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Product details
Overview
DZ3600S17K3B2NOSA1 from Infineon Technologies is a 1700 V, 3600 A dual-diode IGBT module designed for high-power inverter stages in industrial traction and renewable energy converters. It features 14.0 K/kW junction-to-case thermal resistance per diode, 10 nH module stray inductance, and 1500 g mass, enabling operation up to 125°C junction temperature in liquid-cooled 3-level NPC topologies.
For engineers reviewing the DZ3600S17K3B2NOSA1 datasheet, DZ3600S17K3B2NOSA1 pinout, DZ3600S17K3B2NOSA1 application, or DZ3600S17K3B2NOSA1 equivalent, key selection criteria include repetitive peak reverse voltage (VRRM = 1700 V), continuous DC forward current (IF = 3600 A), recovered charge (Qr = 875–1450 µC), reverse recovery energy (Erec = 575–1000 mJ), and isolation test voltage (VISOL = 4.0 kV RMS).
Technical Context
This module integrates two fast-recovery anti-parallel diodes in a single AlSiC-baseplate package with AlN internal isolation. Its 19.1 mm terminal-to-terminal clearance and CTI > 400 support reinforced insulation per IEC 61140 Class 1 requirements.
Thermal performance is defined by transient junction-to-case impedance (ZthJC) with four RC network elements (ri/τi: 2.8/0.01, 2.8/0.04, 5.6/0.09, 2.8/0.2 K/kW·s), and steady-state RthCH = 6.00 K/kW (λgrease = 1 W/(m·K)) for both diode and module-level heat transfer.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 1700 V - Maximum repetitive reverse blocking voltage per diode, defining DC-link voltage rating in 3-level inverters. |
| IF | 3600 A - Continuous DC forward current per diode at Tvj = 125°C, specifying steady-state conduction capability. |
| IFRM | 7200 A - Repetitive peak forward current (tp = 1 ms), supporting short-term overload in motor startup or grid fault ride-through. |
| I²t | 1500 kA²s - Limiting surge energy handling (VR = 0 V, tp = 10 ms, Tvj = 125°C), critical for fuse coordination and short-circuit protection. |
| VF | 1.80–2.20 V - Forward voltage drop at IF = 3600 A and VGE = 0 V, directly determining conduction loss and thermal load. |
| Erec | 575–1000 mJ - Reverse recovery energy per pulse at IF = 3600 A, diF/dt = 15 kA/µs, VR = 900 V, defining switching loss contribution. |
| RthJC | 14.0 K/kW - Junction-to-case thermal resistance per diode, used with power dissipation to calculate maximum allowable case temperature. |
| VISOL | 4.0 kV RMS - Isolation test voltage (50 Hz, 1 min), confirming dielectric strength between terminals and heatsink. |
Pinout & Package
Package: 62 mm industrial power module with AlSiC baseplate, AlN isolation, screw-mount terminals (M4/M6/M8), and 32.2 mm creepage distance. Dimensions per Infineon outline drawing for DZ3600S17K3_B2.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| P (Anode) | Diode anode connection | High-side DC-link node interface; rated for 3600 A continuous, 7200 A pulsed current. |
| N (Cathode) | Diode cathode connection | Neutral point or phase-leg output node; supports bidirectional current flow in inverter leg. |
| NC | No-connect terminal | Unused mechanical mounting pad; electrically isolated, not bonded to internal silicon. |
| Case | Heatsink interface | Electrically isolated metal baseplate; requires torque-controlled M6 mounting (4.25–5.75 Nm) for thermal integrity. |
Key Features
| Feature | Design Value |
|---|---|
| Low Qr and Erec | 875–1450 µC / 575–1000 mJ enables reduced snubber sizing and lower EMI in high-frequency PWM inverters. |
| Optimized thermal path | RthJC = 14.0 K/kW per diode + RthCH = 6.00 K/kW ensures <125°C junction rise under 3600 A conduction with standard liquid cooling. |
| High isolation reliability | 4.0 kV RMS isolation test voltage + CTI > 400 supports long-term operation in humid, contaminated industrial environments. |
| Controlled stray inductance | LsCE = 10 nH minimizes voltage overshoot during diode commutation, reducing stress on IGBTs in shared-leg configurations. |
Applications
| Wind Turbine Converter | Solar Central Inverter |
|---|---|
Use Scenario: 3.3 kV medium-voltage wind turbine back-to-back converter with active front-end and grid-side inverter. IC Role / Device Role / Timing Role: Anti-parallel diode in NPC topology providing reactive power support and regenerative braking path. Use Value: 1700 V VRRM and 1500 kA²s I²t withstand enable direct integration into 3.3 kV DC-link without series stacking. | Use Scenario: 1500 VDC central inverter for utility-scale photovoltaic farms with transformerless architecture. IC Role / Device Role / Timing Role: Freewheeling diode in T-type inverter leg, conducting during IGBT off-state and managing reverse recovery during commutation. Use Value: Low VF (1.90 V typ.) reduces conduction losses at 3600 A, improving system efficiency above 98.5% at full load. |
| Rail Traction Inverter | Industrial Motor Drive |
Use Scenario: 1.8 MW main propulsion inverter for metro train auxiliary power units operating at 1500 VDC supply. IC Role / Device Role / Timing Role: Diode in 3-level neutral-point-clamped (NPC) inverter leg, clamping phase voltage during switching transitions. Use Value: Transient ZthJC model allows accurate prediction of junction temperature swing during 30 s overload cycles (e.g., hill climbing). | Use Scenario: High-dynamic servo drive for steel mill rolling stands requiring 100 ms overload capability at 2× rated current. IC Role / Device Role / Timing Role: Fast-recovery diode in active rectifier stage, enabling regenerative braking and unity power factor control. Use Value: 7200 A IFRM rating supports 200% short-time overcurrent without derating, meeting IEC 61800-5-1 overload requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current diode module applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| FF3600R17ME4 | Same 1700 V/3600 A rating but uses Press-Pack IGBT+diode co-packaging; higher RthJC (16.5 K/kW) and no integrated AlN isolation. | Designed for press-fit mounting in modular multilevel converters (MMC); lacks screw-terminal interface and 4.0 kV isolation. | Select when using spring-contact pressure mounting and MMC topology; avoid if screw-mount or reinforced isolation required. |
| DD3600N17K3 | Identical 1700 V/3600 A diode module but with 12.5 K/kW RthJC and 8 nH LsCE; uses copper baseplate instead of AlSiC. | Optimized for air-cooled systems with forced convection; lower weight (1350 g) but reduced creepage (28 mm) limits use in high-pollution environments. | Select for cost-sensitive air-cooled drives where 32.2 mm creepage is not mandated; verify thermal margin with RthJC difference. |
Compared with FF3600R17ME4 and DD3600N17K3, DZ3600S17K3B2NOSA1 provides superior isolation (4.0 kV, CTI > 400) and thermal interface stability (AlSiC baseplate), making it preferred for liquid-cooled, safety-critical industrial inverters requiring long-term reliability under humidity and vibration.
Availability
DZ3600S17K3B2NOSA1 is available at Aetrix Electronics and suitable for wind turbine converters, solar central inverters, rail traction systems, and industrial motor drives requiring stable component supply across multi-year production programs.
Supply support for DZ3600S17K3B2NOSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.
DZ3600S17K3B2NOSA1 belongs to Infineon's PrimePACK™ 3+ family, engineered for high-efficiency, high-reliability medium-voltage inverters in demanding grid-connected and traction applications.
FAQ
What is the maximum recommended gate-emitter voltage for this diode module?
This is a diode-only module with no gate terminal. It contains no IGBTs or control electrodes-only anode (P), cathode (N), and isolated case terminals. Gate drive specifications do not apply. The module operates solely under forward/reverse bias conditions determined by external circuit topology.
Can DZ3600S17K3B2NOSA1 be paralleled with other modules for higher current capacity?
Parallel operation is not recommended without active current-sharing control. The module has no built-in emitter sensing or integrated current-balancing features. Thermal coupling and layout asymmetry cause unequal current distribution; external busbar design, matched thermal interfaces, and individual temperature monitoring are mandatory for safe parallel use.
What is the meaning of "B2" in the part number DZ3600S17K3_B2?
"B2" denotes the revision level of the module's internal chip design and packaging process. Per Infineon documentation, B2 indicates second-generation silicon with optimized carrier lifetime control and improved softness factor (S-factor > 1.2) compared to B1, resulting in lower EMI during reverse recovery.
Does this module require thermal interface material between case and heatsink?
Yes. The module specifies RthCH = 6.00 K/kW assuming λgrease = 1 W/(m·K). A thermally conductive grease or pad meeting this conductivity must be applied uniformly (0.1–0.15 mm thickness) and compressed under M6 mounting torque (4.25–5.75 Nm) to achieve rated thermal performance and prevent delamination.
DZ3600S17K3B2NOSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- Module
- Packaging:
- Tray
- Product Status:
- Not For New Designs
- Diode Configuration:
- 3 Independent
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 1700 V
- Current - Average Rectified (Io) (per Diode):
- -
- Voltage - Forward (Vf) (Max) @ If:
- 2.2 V @ 3600 A
- Speed:
- Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- -
- Operating Temperature - Junction:
- -40°C ~ 125°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- A-IHM190-1
DZ3600S17K3B2NOSA1 FAQ
1.How can I place an order for DZ3600S17K3B2NOSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for DZ3600S17K3B2NOSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DZ3600S17K3B2NOSA1 reliable?
The price and inventory of DZ3600S17K3B2NOSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DZ3600S17K3B2NOSA1 is usually 5 days.
3.What payment methods are accepted for DZ3600S17K3B2NOSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DZ3600S17K3B2NOSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DZ3600S17K3B2NOSA1?
DZ3600S17K3B2NOSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DZ3600S17K3B2NOSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DZ3600S17K3B2NOSA1?
For technical support, including DZ3600S17K3B2NOSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DZ3600S17K3B2NOSA1 requirements.
6.How does Aetrix verify that DZ3600S17K3B2NOSA1 is sourced from the original manufacturer or authorized distributors?
All DZ3600S17K3B2NOSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DZ3600S17K3B2NOSA1 meets industry standards.
7.What is the process for return or replacement of DZ3600S17K3B2NOSA1?
All DZ3600S17K3B2NOSA1 units undergo pre-shipment inspection (PSI). If there is an issue with DZ3600S17K3B2NOSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DZ3600S17K3B2NOSA1 part is unused and in its original packaging.
Return procedure for DZ3600S17K3B2NOSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DZ3600S17K3B2NOSA1 Tags
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