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Vishay General Semiconductor - Diodes Division EGF1D-2HE3_B/H
- Part No.:
- EGF1D-2HE3_B/H
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- Single Diodes
- Package:
- DO-214BA
- Datasheet:
-
EGF1D-2HE3_B/H.pdf
- Description:
- DIODE GEN PURP 200V 1A DO214BA
- Quantity:
- Payment:
- Shipping:
Inventory:9,595
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Product details
Overview
EGF1D-2HE3_B/H from Vishay General Semiconductor is a surface-mount glass-passivated ultrafast rectifier diode in DO-214BA (GF1) package, rated for 200 V repetitive peak reverse voltage, 1.0 A average forward current, 50 ns reverse recovery time, and 1.0 V forward voltage at 1.0 A - designed for high-frequency freewheeling and rectification in automotive-grade SMPS and inverters.
For engineers reviewing the EGF1D-2HE3_B/H datasheet, EGF1D-2HE3_B/H pinout, EGF1D-2HE3_B/H application, or EGF1D-2HE3_B/H equivalent, key selection criteria include its AEC-Q101 qualification, MSL Level 1 rating, 175 °C max junction temperature, low switching losses, and RoHS-compliant matte tin-plated leads suitable for automated placement.
Technical Context
This device implements a single-diode Superectifier® structure with cavity-free glass-passivated junction, enabling high reliability under thermal cycling and high surge conditions. Its 50 ns trr and 15 pF junction capacitance support efficient operation in 100–500 kHz switching converters.
Rated for TJ = –65 °C to +175 °C and qualified per AEC-Q101, EGF1D-2HE3_B/H meets automotive stress requirements including JESD201 Class 2 whisker resistance and J-STD-020 lead finish solderability - with thermal resistance RθJL = 30 °C/W (PCB-mounted on 5.0 mm × 5.0 mm copper pad).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 200 V - supports DC blocking in 24 V/48 V automotive bus-derived converters without derating |
| IF(AV) | 1.0 A at TL = 125 °C - enables compact layout in space-constrained power stages |
| trr | 50 ns - minimizes switching loss during turn-off in hard-switched topologies |
| VF | 1.0 V at IF = 1.0 A - reduces conduction loss vs. standard fast recovery diodes |
| IFSM | 30 A (8.3 ms half-sine) - withstands inrush and fault currents in motor drive freewheel paths |
| TJ(max) | +175 °C - allows operation in under-hood environments without thermal throttling |
| CJ | 15 pF at 4.0 V, 1 MHz - limits capacitive coupling noise in high-dv/dt gate-drive circuits |
Pinout & Package
Package: GF1 (DO-214BA), molded epoxy over glass body, UL 94 V-0 rated; polarity indicated by cathode band; matte tin-plated leads compliant with J-STD-002 and JESD 22-B102.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry node | Connected to switch node or transformer secondary in flyback/freewheel configurations |
| Cathode | Forward current exit node | Connected to output rail or ground return path; marked by color band |
Key Features
| Feature | Design Value |
|---|---|
| Superectifier® structure | Eliminates micro-cavities at junction interface, improving long-term reliability under thermal stress |
| AEC-Q101 qualification | Validated for automotive power electronics including engine control modules and ADAS power supplies |
| MSL Level 1 (250 °C peak) | Enables single-reflow assembly without moisture sensitivity concerns |
| Low trr with low CJ | Optimizes trade-off between switching speed and EMI generation in high-frequency SMPS |
| RoHS-compliant HE3 suffix | Meets JESD201 Class 2 whisker resistance for stable solder joint integrity over lifetime |
Applications
| Automotive DC-DC Converters | Server PSU Freewheeling |
|---|---|
Use Scenario: 12 V → 3.3 V/5 V buck converter in infotainment head unit with 300 kHz switching frequency. IC Role / Device Role / Timing Role: Freewheeling diode providing low-loss current path during high-side MOSFET off-time. Use Value: 50 ns trr and 1.0 V VF reduce total power loss by ~18% vs. standard FRD in same footprint. | Use Scenario: Output rectification in 48 V input telecom/server PSUs operating at 250–400 kHz. IC Role / Device Role / Timing Role: Secondary-side unidirectional current valve in synchronous rectifier-assisted topology. Use Value: 175 °C TJ(max) and 30 A IFSM support burst-mode operation and transient overload handling. |
| Industrial Motor Drive Snubbers | Consumer AC-DC Adapters |
Use Scenario: Clamp diode in IGBT snubber network for 200 W BLDC driver with 20 kHz PWM. IC Role / Device Role / Timing Role: Fast-recovery clamp element absorbing inductive kick energy. Use Value: Cavity-free glass passivation prevents premature failure under repeated dv/dt stress (>500 V/μs). | Use Scenario: Output rectifier in 65 W USB-PD adapter using quasi-resonant flyback. IC Role / Device Role / Timing Role: High-efficiency secondary-side rectifier replacing Schottky in cost-sensitive designs. Use Value: 1.0 V VF and 15 pF CJ balance conduction loss and EMI performance better than 40 V Schottky alternatives. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultrafast rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STTH1R06U | 600 V VRRM, 55 ns trr, 1.15 V VF, TO-277A package | Higher voltage rating but larger footprint and higher forward drop | Select when >200 V blocking is required; not drop-in due to different package and pinout |
| ES1D-E3/57T | 200 V VRRM, 35 ns trr, 1.7 V VF, DO-214AC (SMA) package | Faster recovery but higher VF increases conduction loss at >0.5 A | Prefer for <0.5 A, high-frequency apps where trr dominates loss; not AEC-Q101 qualified |
Compared with STTH1R06U and ES1D-E3/57T, EGF1D-2HE3_B/H offers optimal balance of 200 V rating, 50 ns trr, 1.0 V VF, AEC-Q101 compliance, and DO-214BA footprint - making it preferred for automotive and industrial 1 A, 200 V freewheeling where reliability and thermal robustness are critical.
Availability
EGF1D-2HE3_B/H is available at Aetrix Electronics and suitable for automotive DC-DC converters, server power supply freewheeling, and industrial motor drive snubbers requiring stable component supply and long-term lifecycle support.
Supply support for EGF1D-2HE3_B/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and optoelectronics with emphasis on reliability and automotive-grade qualification.
The EGF1D-2HE3_B/H belongs to the EGF1x ultrafast rectifier family, engineered for high-frequency switching power conversion in harsh environments - particularly targeting AEC-Q101-compliant automotive and industrial applications demanding extended temperature operation and robust surge immunity.
FAQ
What is the maximum junction temperature rating for EGF1D-2HE3_B/H?
The EGF1D-2HE3_B/H has a maximum junction temperature (TJ(max)) of +175 °C, verified per the Vishay datasheet revision dated 24-Oct-2022. This rating enables reliable operation in under-hood automotive environments and high-ambient industrial settings. The device's thermal resistance RθJL is 30 °C/W when mounted on a 5.0 mm × 5.0 mm copper pad, supporting thermal design up to this limit. EGF1D-2HE3_B/H must be operated within this absolute maximum to ensure long-term reliability.
Is EGF1D-2HE3_B/H qualified for automotive applications?
Yes, EGF1D-2HE3_B/H is AEC-Q101 qualified, as explicitly stated in the Vishay datasheet (Document Number: 88579). It meets stress test requirements for automotive power electronics, including high-temperature operating life, temperature cycling, and mechanical shock. The HE3 suffix confirms RoHS compliance and JESD201 Class 2 whisker resistance - both essential for automotive production. EGF1D-2HE3_B/H is intended for use in engine control units, ADAS power supplies, and infotainment systems.
What does the "HE3" suffix indicate in EGF1D-2HE3_B/H?
The "HE3" suffix in EGF1D-2HE3_B/H denotes Vishay's RoHS-compliant, AEC-Q101-qualified product variant with matte tin-plated leads that meet JESD201 Class 2 whisker resistance and J-STD-002 solderability standards. It also indicates compliance with UL 94 V-0 flammability rating for the epoxy molding compound. The "B/H" denotes packaging: "B" is the revision code, and "H" specifies 7-inch tape-and-reel delivery (1500 units per reel). EGF1D-2HE3_B/H is not for new designs per Vishay's notice.
What is the reverse recovery time (trr) of EGF1D-2HE3_B/H and how is it measured?
The typical reverse recovery time (trr) of EGF1D-2HE3_B/H is 50 ns, measured under conditions of IF = 0.5 A, IR = 1.0 A, and Irr = 0.25 A, per the Vishay datasheet. This parameter reflects the diode's speed in transitioning from forward conduction to reverse blocking - critical for minimizing switching losses in high-frequency converters. The value is confirmed across all EGF1x variants and applies directly to EGF1D-2HE3_B/H without derating.
Does EGF1D-2HE3_B/H have a specified junction capacitance value?
Yes, EGF1D-2HE3_B/H has a typical junction capacitance (CJ) of 15 pF, measured at 4.0 V reverse bias and 1 MHz frequency. This value is documented in the Electrical Characteristics table of the Vishay datasheet (Document Number: 88579) and is consistent across the EGF1A–EGF1D family. CJ impacts high-frequency noise coupling and snubber design - engineers should use 15 pF for EMI modeling and layout optimization in SMPS applications using EGF1D-2HE3_B/H.
EGF1D-2HE3_B/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Series:
- Superectifier®
- Package/Case:
- DO-214BA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 200 V
- Current - Average Rectified (Io):
- 1A
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 1 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 50 ns
- Current - Reverse Leakage @ Vr:
- 5 µA @ 200 V
- Capacitance @ Vr, F:
- 15pF @ 4V, 1MHz
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214BA (GF1)
- Operating Temperature - Junction:
- -65°C ~ 175°C
EGF1D-2HE3_B/H FAQ
1.How can I place an order for EGF1D-2HE3_B/H through Aetrix?
Please submit a Request for Quotation (RFQ) for EGF1D-2HE3_B/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for EGF1D-2HE3_B/H reliable?
The price and inventory of EGF1D-2HE3_B/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for EGF1D-2HE3_B/H is usually 5 days.
3.What payment methods are accepted for EGF1D-2HE3_B/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for EGF1D-2HE3_B/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for EGF1D-2HE3_B/H?
EGF1D-2HE3_B/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your EGF1D-2HE3_B/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for EGF1D-2HE3_B/H?
For technical support, including EGF1D-2HE3_B/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your EGF1D-2HE3_B/H requirements.
6.How does Aetrix verify that EGF1D-2HE3_B/H is sourced from the original manufacturer or authorized distributors?
All EGF1D-2HE3_B/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that EGF1D-2HE3_B/H meets industry standards.
7.What is the process for return or replacement of EGF1D-2HE3_B/H?
All EGF1D-2HE3_B/H units undergo pre-shipment inspection (PSI). If there is an issue with EGF1D-2HE3_B/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The EGF1D-2HE3_B/H part is unused and in its original packaging.
Return procedure for EGF1D-2HE3_B/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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