STMicroelectronics E-L6385D013TR

Overview

E-L6385D013TR from STMicroelectronics is a high-voltage, dual-channel gate driver IC designed to independently drive N-channel power MOSFETs or IGBTs in half-bridge topologies. It features 600 V rail capability, ±50 V/ns dV/dt immunity across full temperature range, 400 mA source / 650 mA sink output current, and 50/30 ns rise/fall times with 1 nF load - enabling robust motor control and industrial SMPS applications.

For engineers reviewing the E-L6385D013TR datasheet, E-L6385D013TR pinout, E-L6385D013TR application, or E-L6385D013TR equivalent, key selection criteria include bootstrap-integrated high-side floating operation, CMOS/TTL-compatible Schmitt-trigger inputs with hysteresis, UVLO on both high- and low-side sections, and SO-8 package thermal resistance of 100 °C/W.

Technical Context

The L6385 employs BCD "OFF-LINE" process technology to integrate a high-voltage level shifter, bootstrap driver with internal DMOS + series diode, and dual independent gate drivers. Its floating high-side section operates up to 600 V referenced to VOUT, while the low-side section is ground-referenced.

Logic inputs (HIN/LIN) are CMOS/TTL compatible with defined Vil = 1.5 V and Vih = 3.6 V thresholds and built-in hysteresis; UVLO blocks both outputs when VCC drops below 7.9–8.8 V or VBOOT falls below 7.2–9.2 V, ensuring safe startup and fault recovery.

Key Specifications

Pinout & Package

Package: SO-8 (Small Outline, 150 mil width), surface-mount, RoHS-compliant, with thermal resistance R_{th j-amb} = 100 °C/W.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage half-bridge gate driver applications.

Compared with IR2110STRPBF and UCC27211DR, E-L6385D013TR uniquely combines integrated bootstrap diode, dual UVLO, and SO-8 packaging - offering optimal trade-offs for cost-sensitive, medium-frequency industrial half-bridges where board space and EMI resilience are critical.

Availability

E-L6385D013TR is available at Aetrix Electronics and suitable for industrial motor drives, switch-mode power supplies, uninterruptible power supplies, and induction heating systems requiring stable component supply and long-term production continuity.

Supply support for E-L6385D013TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in automotive, industrial, and power discrete solutions with vertical manufacturing capabilities.

The L6385 belongs to ST's high-voltage gate driver product line, engineered specifically for ruggedized half-bridge control in off-line AC-DC and motor drive systems operating up to 600 V.

FAQ

What is the maximum recommended switching frequency for E-L6385D013TR?

The datasheet specifies a maximum recommended switching frequency of 400 kHz under CL = 1 nF load conditions. This limit arises from propagation delays (105–110 ns), rise/fall times (50/30 ns), and thermal constraints (750 mW max power dissipation). At higher frequencies, bootstrap capacitor recharge time and junction temperature rise become limiting factors.

Can E-L6385D013TR drive SiC MOSFETs?

E-L6385D013TR can drive SiC MOSFETs only if their gate threshold voltage and total gate charge fall within the driver's output capability: 400 mA source/650 mA sink, 15 V VCC, and 17 V VBOOT swing. However, its 50/30 ns edge speeds and lack of active Miller clamp make it suboptimal for fast-switching SiC applications above 100 kHz where gate ringing and shoot-through risk increase.

Is an external bootstrap diode required with E-L6385D013TR?

No external bootstrap diode is required. The L6385 integrates a patented bootstrap driver using a high-voltage DMOS transistor and series diode, eliminating the need for an external fast-recovery diode. This reduces leakage current, PCB area, and component count - though an external diode may be added if VOUT duty cycle limits internal charging time or if >1 V bootstrap voltage drop must be avoided.

What happens during VCC undervoltage condition?

When VCC drops below the UVLO turn-off threshold (7.9–8.8 V), both LVG and HVG outputs are forced low and held inactive until VCC rises above the turn-on threshold (9.1–10.1 V). This dual-threshold hysteresis (≥1.3 V) prevents oscillatory behavior during brownout conditions and ensures clean, glitch-free restart after power recovery.