STMicroelectronics E-L6386D

Overview

E-L6386D from STMicroelectronics is a high-voltage, dual-channel gate driver IC designed to independently drive high-side and low-side N-channel power MOSFETs or IGBTs in half-bridge topologies. It features 600 V rail capability, integrated bootstrap diode, ±50 V/ns dV/dt immunity, 400 mA source / 650 mA sink output current, and CMOS/TTL-compatible Schmitt-trigger inputs with hysteresis - enabling robust operation in motor control inverters and SMPS.

For engineers reviewing the E-L6386D datasheet, E-L6386D pinout, E-L6386D application, or E-L6386D equivalent, key selection considerations include its floating high-side driver architecture (up to 600 V), UVLO on both VCC and Vboot rails, diagnostic open-drain output (pin 5), and SO14/DIP14 package compatibility for industrial power stage designs.

Technical Context

The L6386D implements a BCD "OFF-LINE" process-based dual-driver architecture with independent high-side (floating) and low-side (ground-referenced) output stages. Its integrated bootstrap driver replaces external fast-recovery diodes using a synchronous DMOS + series diode structure, with typical 125 Ω R_DSON and 17 V V_BOOT–V_OUT margin.

UVLO protection operates separately on VCC (12.0 V turn-on, 10.0 V turn-off) and V_BOOT (11.9 V turn-on, 9.9 V turn-off), each with 2 V hysteresis. The diagnostic output (pin 5) provides open-drain fault reporting tied to internal shutdown or overcurrent detection.

Key Specifications

Pinout & Package

Package: SO14 (8.55 × 5.8 mm body, 1.27 mm pitch) and DIP14 (20 × 8.5 mm, 2.54 mm pitch). Both packages support through-hole and surface-mount assembly in industrial power modules.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage half-bridge gate driver applications.

Compared with IR2110PbF and UCC27211D, E-L6386D uniquely combines 600 V floating capability, integrated bootstrap diode, dual UVLO, and diagnostic output in a single SO14/DIP14 package - simplifying design for 400 V-class industrial inverters requiring functional safety awareness.

Availability

E-L6386D is available at Aetrix Electronics and suitable for motor control inverters, industrial SMPS, solar microinverters, and UPS power stages requiring stable component supply and long-term industrial lifecycle support.

Supply support for E-L6386D includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, MEMS, and microcontroller technologies for industrial, automotive, and consumer markets.

The L6386 product line targets high-voltage power conversion applications, delivering robust, integrated gate drivers for half-bridge topologies in motor drives, SMPS, and renewable energy systems.

FAQ

What is the purpose of the DIAG pin (pin 5) on E-L6386D?

The DIAG pin is an open-drain fault indicator that pulls low during internal fault conditions including VCC or V_BOOT undervoltage lockout, overtemperature events, or internal logic errors. It requires an external pull-up resistor to VCC or MCU I/O voltage and enables real-time system-level fault detection without additional sensing circuitry.

Can E-L6386D drive SiC or GaN MOSFETs?

E-L6386D can drive SiC and GaN MOSFETs with gate thresholds compatible with its 15 V VCC supply and 400 mA/650 mA drive strength, provided gate charge requirements stay within 30 nC and layout minimizes parasitic inductance. However, its 50/30 ns rise/fall times and ±50 V/ns dV/dt immunity are optimized for silicon IGBTs/MOSFETs - not ultra-fast GaN devices requiring sub-10 ns switching.

Why does E-L6386D have two high-side output pins (OUT and HVG)?

Pins 12 (OUT) and 13 (HVG) are electrically connected to the same internal high-side driver node. This dual-pin configuration provides layout flexibility: OUT serves as the primary floating output, while HVG allows shorter trace routing or parallel connection to reduce gate loop inductance - critical for noise-sensitive high-voltage switching applications.

How does the integrated bootstrap driver function without an external diode?

The integrated bootstrap driver uses a patented high-voltage DMOS transistor driven synchronously with the low-side output (LVG), placed in series with an internal diode. When LVG is active, the DMOS conducts to charge the external bootstrap capacitor (C_BOOT). The series diode blocks reverse current, eliminating leakage paths common with discrete fast-recovery diodes and improving light-load efficiency.