STMicroelectronics E-L6386D013TR

Overview

E-L6386D013TR from STMicroelectronics is a high-voltage, dual-channel gate driver IC designed for independent high-side (floating) and low-side MOSFET/IGBT control in half-bridge topologies. It supports rail voltages up to 600 V, delivers 400 mA source / 650 mA sink peak output current, features integrated bootstrap diode, and operates with CMOS/TTL-compatible Schmitt-trigger inputs - used in motor drives, SMPS, and industrial inverters.

For engineers reviewing the E-L6386D013TR datasheet, E-L6386D013TR pinout, E-L6386D013TR application, or E-L6386D013TR equivalent, key selection criteria include dV/dt immunity (±50 V/ns), UVLO on both high- and low-side sections, bootstrapped supply capability (V_BOOT up to 618 V), and diagnostic open-drain output (pin 5).

Technical Context

The L6386 employs BCD "OFF-LINE" process technology to integrate high-voltage level-shifting, independent high-side and low-side drivers, and an internal bootstrap DMOS structure replacing external fast-recovery diodes. Its logic inputs feature hysteresis and internal pull-down, while UVLO thresholds are temperature-stable across −45 °C to +125 °C.

It implements synchronous bootstrap charging via LVG-driven DMOS with series diode and internal charge pump, enabling reliable floating supply generation. The diagnostic output (pin 5) provides open-drain fault indication tied to internal overcurrent or UVLO conditions.

Key Specifications

Pinout & Package

Package: SO14 (Surface-mount, 14-pin small outline). Pin pitch: 1.27 mm. Thermal resistance R_{th j-amb} = 165 °C/W.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage half-bridge gate driver applications.

Compared with IR2110PbF and UCC27211DR, E-L6386D013TR uniquely integrates the bootstrap diode and supports true 600 V rail operation with dual UVLO - making it optimal for compact, high-reliability offline power stages where board space and dV/dt immunity are critical.

Availability

E-L6386D013TR is available at Aetrix Electronics and suitable for industrial motor drives, switch-mode power supplies, and uninterruptible power supplies requiring stable component supply and long-term lifecycle support.

Supply support for E-L6386D013TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, microcontrollers, and automotive ICs.

The L6386 belongs to ST's high-voltage gate driver product line, engineered specifically for robust, integrated half-bridge control in offline AC-DC and DC-AC conversion systems.

FAQ

What is the maximum allowable dV/dt at the high-side output (pin 12) without false triggering?

The E-L6386D013TR guarantees immunity to ±50 V/ns dV/dt across its full operating temperature range (−45 °C to +125 °C), verified per datasheet Figure 5–10 characterization. This specification ensures reliable operation in high-noise environments such as motor drives and SMPS with fast-switching SiC or GaN devices.

Can the integrated bootstrap driver replace an external fast-recovery diode in all applications?

Yes - the internal DMOS+diode structure replaces external diodes in standard bootstrap configurations where LVG is actively driven low during charging. However, if V_OUT remains near V_BOOT for extended periods (e.g., >5 ms high-side conduction), external diode supplementation may be needed to maintain sufficient V_BOOT headroom.

How does the diagnostic output (pin 5) behave during undervoltage lockout?

Pin 5 (DIAG) is an open-drain output that pulls low during any detected fault condition, including V_CC or V_BOOT UVLO, overcurrent, or internal thermal shutdown. It remains low until the fault clears and a valid logic input edge resets the latch - no external reset signal is required.

What is the recommended minimum bootstrap capacitor value for a 30 nC gate charge MOSFET?

For a MOSFET with 30 nC total gate charge and 10 V gate drive, the equivalent gate capacitance is ~3 nF. ST recommends C_BOOT ≥ 100 nF (≥33× C_GATE) to limit voltage droop to <300 mV per cycle. At 400 kHz switching, this ensures stable V_BOOT with adequate margin for leakage and RDSON drop.