STMicroelectronics E-L6571BD
- Part No.:
- E-L6571BD
- Manufacturer:
- STMicroelectronics
- Category:
- Gate Drivers
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
E-L6571BD.pdf
- Description:
- IC GATE DRVR HALF-BRIDGE 8SO
- Quantity:
- Payment:

- Shipping:

Inventory:3,748
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
E-L6571BD from STMicroelectronics is a high-voltage half-bridge gate driver IC with integrated oscillator, designed to drive external N-channel MOSFETs and IGBTs in resonant and hard-switched topologies. It features 600 V high-side floating supply capability, programmable oscillator frequency (up to 200 kHz), 0.72 μs typical internal dead time (L6571B variant), ±50 V/ns dV/dt immunity, and 15.6 V Zener clamp on VS - used in AC-DC SMPS, fluorescent lamp ballasts, and induction heating inverters.
For engineers reviewing the E-L6571BD datasheet, E-L6571BD pinout, E-L6571BD application, or E-L6571BD equivalent, key selection criteria include bootstrap-based high-side drive architecture, dual-sink/source current capability (270 mA sink / 170 mA source), undervoltage lockout with hysteresis, oscillator timing via external R-C network, and DIP-8/SO-8 package compatibility for layout-constrained power stages.
Technical Context
The E-L6571BD implements a self-contained oscillator with frequency set by external RF and CF components, supporting both free-running and externally synchronized operation via the CF pin. Its internal logic enforces fixed dead time (0.72 μs typ.) between high- and low-side outputs to prevent shoot-through in half-bridge configurations.
It uses BCD (Bipolar-CMOS-DMOS) off-line technology for monolithic integration of high-voltage level-shifting, gate drivers, and protection circuitry. The VS pin includes a 15.6 V Zener clamp, while BOOT and OUT pins sustain up to 618 V and ±50 V/ns slew rates - enabling direct interface with 600 V-class power switches without external level shifters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| High-side voltage rating | 618 V max BOOT-to-GND - supports 600 V bridge applications with margin |
| Oscillator frequency range | 200 kHz max - sets switching speed for resonant converters and electronic ballasts |
| Dead time (typ.) | 0.72 μs - prevents cross-conduction in half-bridge without external timing control |
| Driver output current | 270 mA sink / 170 mA source - drives gate capacitance of medium-power MOSFETs/IGBTs |
| dV/dt immunity | ±50 V/ns - ensures robust operation during fast high-side switching transitions |
| VS clamping voltage | 15.6 V (typ.) - protects internal circuitry from overvoltage on supply rail |
| Start-up current | 150 μA (typ.) - enables low-power auxiliary supply design |
Pinout & Package
Package: SO-8 (small-outline integrated circuit, 150 °C/W junction-to-ambient thermal resistance). Pinout validated per STMicroelectronics Doc ID 4946 Rev 6, Figure 2 and Table 4.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (VS) | Clamped supply input | Internal 15.6 V Zener reference; powers low-side driver and oscillator |
| 2 (RF) | Oscillator resistor node | Connects to external timing resistor; buffered output can drive secondary ICs |
| 3 (CF) | Oscillator capacitor / sync input | Timing capacitor to GND; also accepts external logic signal for forced shutdown |
| 4 (GND) | Power and signal reference | Common return for low-side driver, oscillator, and logic circuits |
| 5 (LVG) | Low-side gate driver output | 170 mA source / 270 mA sink; directly drives N-MOSFET gate referenced to GND |
| 6 (OUT) | Floating reference for high-side | Source terminal of high-side switch; connects to drain of low-side MOSFET |
| 7 (HVG) | High-side gate driver output | 170 mA source / 270 mA sink; drives gate of high-side N-MOSFET referenced to OUT |
| 8 (BOOT) | Floating supply for high-side | Charged via diode-capacitor network; supplies HVG stage at up to 618 V potential |
Key Features
| Feature | Design Value |
|---|---|
| Integrated oscillator with R-C programming | Eliminates need for external clock generator; frequency adjustable from ~10 kHz to 200 kHz |
| Programmable shutdown via CF pin | Logic-level assertion on CF forces low-side ON / high-side OFF - enables fault recovery |
| Undervoltage lockout with hysteresis | 9.0 V turn-on / 8.0 V turn-off threshold - prevents erratic operation during brown-out |
| BCD off-line process technology | Monolithic integration of 600 V DMOS, CMOS logic, and bipolar analog blocks in single die |
| Zener-clamped VS rail | 15.6 V internal clamp limits supply rail stress - simplifies auxiliary bias design |
Applications
| Compact Fluorescent Lamp (CFL) Ballast | Induction Heating Inverter |
|---|---|
|
Use Scenario: Driving half-bridge topology in electronic ballasts for 11–40 W CFL lamps with dimming and end-of-life protection. IC Role / Device Role / Timing Role: Gate driver with built-in oscillator provides precise 40–70 kHz switching and dead-time control for resonant tank excitation. Use Value: Eliminates external timing IC and reduces BOM count by integrating oscillator, UVLO, and bootstrap management in one SO-8 package. |
Use Scenario: Controlling 20–50 kHz half-bridge in domestic induction cooktops with variable load matching and overtemperature response. IC Role / Device Role / Timing Role: High-voltage gate driver synchronizes MOSFET switching with zero-voltage switching (ZVS) detection signals. Use Value: ±50 V/ns dV/dt immunity ensures reliable operation despite rapid voltage transients across resonant coil and workpiece coupling. |
| AC-DC Resonant SMPS | Plasma Ignition Driver |
|
Use Scenario: Powering LLC resonant converters in telecom and industrial 300–1000 W offline PSUs requiring high efficiency and light-load regulation. IC Role / Device Role / Timing Role: Oscillator-programmable driver delivers stable dead time and gate drive strength across wide input voltage (90–264 VAC). Use Value: 150 μA start-up current enables direct connection to HV startup resistors - reducing standby power consumption. |
Use Scenario: Generating high-energy pulses for plasma ignition in gas furnaces and industrial burners using flyback-assisted half-bridge discharge. IC Role / Device Role / Timing Role: Fast-turnoff gate driver with 0.72 μs dead time ensures clean separation between pre-charge and arc-trigger phases. Use Value: 618 V BOOT rating supports direct interface with 600 V IGBTs - avoiding external level-shifters in compact ignition modules. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar half-bridge gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IR2153(D)(PbF) | No integrated oscillator; requires external RC or crystal timing; 600 V rating; no Zener clamp on VCC | Used where external frequency control or synchronization is required; lacks internal UVLO hysteresis | Select when system-level timing coordination is needed or when lower cost per function outweighs oscillator integration |
| UCC27712DR | 600 V high-side driver with enhanced dV/dt immunity (±100 V/ns); no internal oscillator; 4 A peak drive | Targeted at high-frequency GaN or SiC bridges; requires external PWM controller and bootstrap management | Select for >300 kHz designs with wide-bandgap devices where higher drive strength and noise immunity are critical |
Compared with IR2153 and UCC27712, E-L6571BD uniquely integrates oscillator, Zener-clamped VS, and fixed dead time in SO-8 - offering lowest component count for cost-sensitive 20–100 kHz half-bridge systems without external timing or level-shifting.
Availability
E-L6571BD is available at Aetrix Electronics and suitable for AC-DC resonant SMPS, induction heating inverters, compact fluorescent lamp ballasts, and plasma ignition drivers requiring stable component supply and long-term production continuity.
Supply support for E-L6571BD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power ICs, sensors, and automotive-grade components since 1987.
E-L6571BD belongs to ST's high-voltage analog & power IC portfolio, developed specifically for cost-optimized, self-oscillating half-bridge drivers in lighting, appliance, and industrial power conversion applications.
FAQ
What is the maximum recommended operating frequency for E-L6571BD?
The datasheet specifies a maximum oscillation frequency of 200 kHz under recommended operating conditions. At 60 kHz (typical for CFL ballasts), it delivers stable dead time and full drive capability. Operation above 100 kHz requires careful PCB layout to minimize parasitic inductance on BOOT and OUT paths, and verification of gate charge delivery against MOSFET Qg.
Can E-L6571BD drive IGBTs directly?
Yes - its 270 mA sink and 170 mA source output currents are sufficient to drive standard 15–30 A IGBTs with gate charge ≤ 100 nC at 20–50 kHz. For faster switching or higher-current IGBTs, external gate resistors must be selected to limit peak current and manage Miller plateau crossing without oscillation.
How does the CF pin function in shutdown mode?
Pulling CF to GND forces the low-side driver ON and high-side OFF, halting bridge switching while maintaining bootstrap capacitor charge. This is not a latch - release returns to normal oscillator operation. Minimum discharge pulse width must exceed 1 μs to avoid metastability, enforced by adding series resistance (R × C ≥ 1 μs) in the CF discharge path.
Is E-L6571BD pin-compatible with L6571AD?
Yes - both L6571AD (A-version, 1.25 μs dead time) and L6571BD (B-version, 0.72 μs dead time) share identical SO-8 pinout, electrical interface, and functional block diagram. Substitution requires only validation of dead time impact on ZVS margin and thermal performance in the target application.
E-L6571BD Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Driven Configuration:
- Half-Bridge
- Channel Type:
- Synchronous
- Number of Drivers:
- 2
- Gate Type:
- IGBT, N-Channel MOSFET
- Voltage - Supply:
- 10V ~ 16.6V
- Logic Voltage - VIL, VIH:
- -
- Current - Peak Output (Source, Sink):
- 170mA, 270mA
- Input Type:
- RC Input Circuit
- High Side Voltage - Max (Bootstrap):
- 600 V
- Rise / Fall Time (Typ):
- -
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
E-L6571BD FAQ
1.How can I place an order for E-L6571BD through Aetrix?
Please submit a Request for Quotation (RFQ) for E-L6571BD on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for E-L6571BD reliable?
The price and inventory of E-L6571BD are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for E-L6571BD is usually 5 days.
3.What payment methods are accepted for E-L6571BD?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for E-L6571BD transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for E-L6571BD?
E-L6571BD orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your E-L6571BD order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for E-L6571BD?
For technical support, including E-L6571BD datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your E-L6571BD requirements.
6.How does Aetrix verify that E-L6571BD is sourced from the original manufacturer or authorized distributors?
All E-L6571BD products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that E-L6571BD meets industry standards.
7.What is the process for return or replacement of E-L6571BD?
All E-L6571BD units undergo pre-shipment inspection (PSI). If there is an issue with E-L6571BD, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The E-L6571BD part is unused and in its original packaging.
Return procedure for E-L6571BD:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
E-L6571BD Tags

-
ZXGD3009E6TA
Diodes Incorporated

-
1EDN7512BXTSA1
Infineon Technologies
-
UCC27517DBVR
Texas Instruments

-
MCP1416T-E/OT
Microchip Technology

-
MCP1402T-E/OT
Microchip Technology

-
MCP1415T-E/OT
Microchip Technology

-
MCP1401T-E/OT
Microchip Technology

-
IX4428NTR
Littelfuse Inc.

-
IRS2005STRPBF
Infineon Technologies

-
IRS2008STRPBF
Infineon Technologies

-
IX4310TTR
Littelfuse Inc.

-
2EDN7524RXTMA1
Infineon Technologies
Tech Hub
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

