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STMicroelectronics E-L6571BD

Part No.:
E-L6571BD
Manufacturer:
STMicroelectronics
Category:
Gate Drivers
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixE-L6571BD.pdf
Description:
IC GATE DRVR HALF-BRIDGE 8SO
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,748

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Product details

Overview

E-L6571BD from STMicroelectronics is a high-voltage half-bridge gate driver IC with integrated oscillator, designed to drive external N-channel MOSFETs and IGBTs in resonant and hard-switched topologies. It features 600 V high-side floating supply capability, programmable oscillator frequency (up to 200 kHz), 0.72 μs typical internal dead time (L6571B variant), ±50 V/ns dV/dt immunity, and 15.6 V Zener clamp on VS - used in AC-DC SMPS, fluorescent lamp ballasts, and induction heating inverters.

For engineers reviewing the E-L6571BD datasheet, E-L6571BD pinout, E-L6571BD application, or E-L6571BD equivalent, key selection criteria include bootstrap-based high-side drive architecture, dual-sink/source current capability (270 mA sink / 170 mA source), undervoltage lockout with hysteresis, oscillator timing via external R-C network, and DIP-8/SO-8 package compatibility for layout-constrained power stages.

Technical Context

The E-L6571BD implements a self-contained oscillator with frequency set by external RF and CF components, supporting both free-running and externally synchronized operation via the CF pin. Its internal logic enforces fixed dead time (0.72 μs typ.) between high- and low-side outputs to prevent shoot-through in half-bridge configurations.

It uses BCD (Bipolar-CMOS-DMOS) off-line technology for monolithic integration of high-voltage level-shifting, gate drivers, and protection circuitry. The VS pin includes a 15.6 V Zener clamp, while BOOT and OUT pins sustain up to 618 V and ±50 V/ns slew rates - enabling direct interface with 600 V-class power switches without external level shifters.

Key Specifications

Parameter Value and Actual Design Meaning
High-side voltage rating 618 V max BOOT-to-GND - supports 600 V bridge applications with margin
Oscillator frequency range 200 kHz max - sets switching speed for resonant converters and electronic ballasts
Dead time (typ.) 0.72 μs - prevents cross-conduction in half-bridge without external timing control
Driver output current 270 mA sink / 170 mA source - drives gate capacitance of medium-power MOSFETs/IGBTs
dV/dt immunity ±50 V/ns - ensures robust operation during fast high-side switching transitions
VS clamping voltage 15.6 V (typ.) - protects internal circuitry from overvoltage on supply rail
Start-up current 150 μA (typ.) - enables low-power auxiliary supply design

Pinout & Package

Package: SO-8 (small-outline integrated circuit, 150 °C/W junction-to-ambient thermal resistance). Pinout validated per STMicroelectronics Doc ID 4946 Rev 6, Figure 2 and Table 4.

Pin/Terminal Circuit Role Design Meaning
1 (VS) Clamped supply input Internal 15.6 V Zener reference; powers low-side driver and oscillator
2 (RF) Oscillator resistor node Connects to external timing resistor; buffered output can drive secondary ICs
3 (CF) Oscillator capacitor / sync input Timing capacitor to GND; also accepts external logic signal for forced shutdown
4 (GND) Power and signal reference Common return for low-side driver, oscillator, and logic circuits
5 (LVG) Low-side gate driver output 170 mA source / 270 mA sink; directly drives N-MOSFET gate referenced to GND
6 (OUT) Floating reference for high-side Source terminal of high-side switch; connects to drain of low-side MOSFET
7 (HVG) High-side gate driver output 170 mA source / 270 mA sink; drives gate of high-side N-MOSFET referenced to OUT
8 (BOOT) Floating supply for high-side Charged via diode-capacitor network; supplies HVG stage at up to 618 V potential

Key Features

Feature Design Value
Integrated oscillator with R-C programming Eliminates need for external clock generator; frequency adjustable from ~10 kHz to 200 kHz
Programmable shutdown via CF pin Logic-level assertion on CF forces low-side ON / high-side OFF - enables fault recovery
Undervoltage lockout with hysteresis 9.0 V turn-on / 8.0 V turn-off threshold - prevents erratic operation during brown-out
BCD off-line process technology Monolithic integration of 600 V DMOS, CMOS logic, and bipolar analog blocks in single die
Zener-clamped VS rail 15.6 V internal clamp limits supply rail stress - simplifies auxiliary bias design

Applications

Compact Fluorescent Lamp (CFL) Ballast Induction Heating Inverter

Use Scenario: Driving half-bridge topology in electronic ballasts for 11–40 W CFL lamps with dimming and end-of-life protection.

IC Role / Device Role / Timing Role: Gate driver with built-in oscillator provides precise 40–70 kHz switching and dead-time control for resonant tank excitation.

Use Value: Eliminates external timing IC and reduces BOM count by integrating oscillator, UVLO, and bootstrap management in one SO-8 package.

Use Scenario: Controlling 20–50 kHz half-bridge in domestic induction cooktops with variable load matching and overtemperature response.

IC Role / Device Role / Timing Role: High-voltage gate driver synchronizes MOSFET switching with zero-voltage switching (ZVS) detection signals.

Use Value: ±50 V/ns dV/dt immunity ensures reliable operation despite rapid voltage transients across resonant coil and workpiece coupling.

AC-DC Resonant SMPS Plasma Ignition Driver

Use Scenario: Powering LLC resonant converters in telecom and industrial 300–1000 W offline PSUs requiring high efficiency and light-load regulation.

IC Role / Device Role / Timing Role: Oscillator-programmable driver delivers stable dead time and gate drive strength across wide input voltage (90–264 VAC).

Use Value: 150 μA start-up current enables direct connection to HV startup resistors - reducing standby power consumption.

Use Scenario: Generating high-energy pulses for plasma ignition in gas furnaces and industrial burners using flyback-assisted half-bridge discharge.

IC Role / Device Role / Timing Role: Fast-turnoff gate driver with 0.72 μs dead time ensures clean separation between pre-charge and arc-trigger phases.

Use Value: 618 V BOOT rating supports direct interface with 600 V IGBTs - avoiding external level-shifters in compact ignition modules.

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge gate driver applications.

Alternative Part Technical Difference Application Difference Selection Advice
IR2153(D)(PbF) No integrated oscillator; requires external RC or crystal timing; 600 V rating; no Zener clamp on VCC Used where external frequency control or synchronization is required; lacks internal UVLO hysteresis Select when system-level timing coordination is needed or when lower cost per function outweighs oscillator integration
UCC27712DR 600 V high-side driver with enhanced dV/dt immunity (±100 V/ns); no internal oscillator; 4 A peak drive Targeted at high-frequency GaN or SiC bridges; requires external PWM controller and bootstrap management Select for >300 kHz designs with wide-bandgap devices where higher drive strength and noise immunity are critical

Compared with IR2153 and UCC27712, E-L6571BD uniquely integrates oscillator, Zener-clamped VS, and fixed dead time in SO-8 - offering lowest component count for cost-sensitive 20–100 kHz half-bridge systems without external timing or level-shifting.

Availability

E-L6571BD is available at Aetrix Electronics and suitable for AC-DC resonant SMPS, induction heating inverters, compact fluorescent lamp ballasts, and plasma ignition drivers requiring stable component supply and long-term production continuity.

Supply support for E-L6571BD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power ICs, sensors, and automotive-grade components since 1987.

E-L6571BD belongs to ST's high-voltage analog & power IC portfolio, developed specifically for cost-optimized, self-oscillating half-bridge drivers in lighting, appliance, and industrial power conversion applications.

FAQ

What is the maximum recommended operating frequency for E-L6571BD?

The datasheet specifies a maximum oscillation frequency of 200 kHz under recommended operating conditions. At 60 kHz (typical for CFL ballasts), it delivers stable dead time and full drive capability. Operation above 100 kHz requires careful PCB layout to minimize parasitic inductance on BOOT and OUT paths, and verification of gate charge delivery against MOSFET Qg.

Can E-L6571BD drive IGBTs directly?

Yes - its 270 mA sink and 170 mA source output currents are sufficient to drive standard 15–30 A IGBTs with gate charge ≤ 100 nC at 20–50 kHz. For faster switching or higher-current IGBTs, external gate resistors must be selected to limit peak current and manage Miller plateau crossing without oscillation.

How does the CF pin function in shutdown mode?

Pulling CF to GND forces the low-side driver ON and high-side OFF, halting bridge switching while maintaining bootstrap capacitor charge. This is not a latch - release returns to normal oscillator operation. Minimum discharge pulse width must exceed 1 μs to avoid metastability, enforced by adding series resistance (R × C ≥ 1 μs) in the CF discharge path.

Is E-L6571BD pin-compatible with L6571AD?

Yes - both L6571AD (A-version, 1.25 μs dead time) and L6571BD (B-version, 0.72 μs dead time) share identical SO-8 pinout, electrical interface, and functional block diagram. Substitution requires only validation of dead time impact on ZVS margin and thermal performance in the target application.

E-L6571BD Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
-
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tube
Product Status:
Obsolete
Programmable:
Not Verified
Driven Configuration:
Half-Bridge
Channel Type:
Synchronous
Number of Drivers:
2
Gate Type:
IGBT, N-Channel MOSFET
Voltage - Supply:
10V ~ 16.6V
Logic Voltage - VIL, VIH:
-
Current - Peak Output (Source, Sink):
170mA, 270mA
Input Type:
RC Input Circuit
High Side Voltage - Max (Bootstrap):
600 V
Rise / Fall Time (Typ):
-
Operating Temperature:
-40°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOIC

E-L6571BD FAQ

1.How can I place an order for E-L6571BD through Aetrix?

Please submit a Request for Quotation (RFQ) for E-L6571BD on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for E-L6571BD reliable?

The price and inventory of E-L6571BD are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for E-L6571BD is usually 5 days.

3.What payment methods are accepted for E-L6571BD?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for E-L6571BD transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for E-L6571BD?

E-L6571BD orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your E-L6571BD order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for E-L6571BD?

For technical support, including E-L6571BD datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your E-L6571BD requirements.

6.How does Aetrix verify that E-L6571BD is sourced from the original manufacturer or authorized distributors?

All E-L6571BD products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that E-L6571BD meets industry standards.

7.What is the process for return or replacement of E-L6571BD?

All E-L6571BD units undergo pre-shipment inspection (PSI). If there is an issue with E-L6571BD, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The E-L6571BD part is unused and in its original packaging.

Return procedure for E-L6571BD:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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