Renesas EL7155CSZ

Overview

EL7155CSZ from Intersil is a high-performance dual analog pin driver IC with 3-state control, designed for ATE, level-shifting, and IGBT/CCD driving applications. It delivers 3.5A peak current, 3.5Ω typical ON-resistance, and 15ns rise/fall times at 2000pF load while operating from 4.5V to 16.5V supply across -40°C to +85°C.

For engineers reviewing the EL7155CSZ datasheet, EL7155CSZ pinout, EL7155CSZ application, or EL7155CSZ equivalent, this device offers precise timing-matched switching (≤0.5ns t_R/t_F and t_D mismatch), independent VH/VL rail control, and robust capacitive drive capability up to 40MHz clocking - critical for high-speed test equipment and precision level translation.

Technical Context

The EL7155CSZ implements two independently controlled NMOS/PMOS transmission switches: one connecting VH to OUTH, the other VL to OUTL, with IN selecting active path and OE enabling global 3-state. Its topology isolates output FETs from power rails, allowing VH and VL to be set independently between VL and VS+.

Switching performance is characterized under pulsed conditions with CL = 2000pF, delivering 14.5–17ns rise/fall times and ≤0.5ns propagation delay mismatch across 5V–15V supply ranges. Input thresholds support both 3V and 5V CMOS logic, and TTL compatibility is maintained at VS+ = 5V.

Key Specifications

Pinout & Package

EL7155CSZ is housed in an 8-lead narrow-body SOIC package (JEDEC MS-012, pkg drawing M8.15E), with standard 1.27mm pitch, 4.90mm × 3.90mm body, and RoHS-compliant matte tin termination.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar pin driver applications.

Compared with MAX4426ESA+ and ADG5412BRUZ, the EL7155CSZ uniquely combines dual-path 3.5A drive, independent VH/VL rail assignment, and sub-0.5ns timing matching - making it irreplaceable in high-fidelity ATE stimulus generation and precision level-shifting where output symmetry and current delivery are non-negotiable.

Availability

EL7155CSZ is available at Aetrix Electronics and suitable for ATE/burn-in testers, level-shifting interfaces, IGBT gate drivers, and CCD imaging drivers requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for EL7155CSZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Intersil Corporation is a leading provider of precision analog and power management solutions, acquired by Renesas Electronics in 2017. Its products serve industrial, infrastructure, and high-end consumer markets with emphasis on reliability and performance.

The EL7155CSZ belongs to Intersil's high-speed pin driver product line, engineered specifically for automated test equipment and level-shifting applications demanding nanosecond timing accuracy, high peak current, and rail-flexible output architecture.

FAQ

What is the absolute maximum voltage rating between VH and VL for EL7155CSZ?

The EL7155CSZ datasheet specifies VH–VL ≤ +16.5V as an absolute maximum rating. This limit ensures safe operation of the internal output FETs and prevents breakdown of the isolation structure between the upper and lower switch paths. Exceeding this voltage risks permanent damage to the EL7155CSZ, even if other supply rails remain within specification.

Can EL7155CSZ drive negative voltages on the VL pin?

Yes - the EL7155CSZ supports VL down to -5V relative to GND, as confirmed in Table 2 of the datasheet. This capability enables true bipolar level shifting (e.g., -5V to +15V swing), but VL must never exceed GND to avoid forward-biasing internal protection diodes. The EL7155CSZ maintains full 3.5A peak drive and timing specs across this range.

Does EL7155CSZ require external bypass capacitors, and if so, what values are recommended?

Yes - the EL7155CSZ requires local bypassing due to high dI/dt switching. The datasheet recommends a 2.2µF tantalum capacitor in parallel with a 0.1µF ceramic MLCC between VS+ and GND, placed adjacent to pins 1 and 4. Additional 0.1µF ceramics are advised on VH and VL pins when driving >1000pF loads to suppress rail collapse and maintain timing fidelity in the EL7155CSZ.

How does the 3-state function behave on EL7155CSZ when OE is asserted low?

When OE is low, both OUTH and OUTL enter high-impedance (3-state) mode regardless of IN state. The outputs float at voltages determined by residual charge on load capacitance - they may settle anywhere between VL and VH, but cannot exceed those rails due to internal body diode clamping. This behavior is explicitly defined in Table 1 and Applications Information section of the EL7155CSZ datasheet.

Is EL7155CSZ compatible with 3.3V logic inputs when VS+ = 15V?

Yes - the EL7155CSZ input thresholds (VIH = 2.4V min, VIL = 0.8V max at VS+ = 15V) are fully compatible with 3.3V CMOS logic levels. Input leakage remains below 10µA, and the 3.5pF input capacitance avoids signal degradation. This interoperability is verified across all tested supply voltages and is a key design feature of the EL7155CSZ.