Taiwan Semiconductor Corporation ES1B

Overview

ES1B from Taiwan Semiconductor is a 1 A, 100 V super fast recovery surface-mount rectifier diode in DO-214AC (SMA) package, featuring 35 ns reverse recovery time, 0.95 V forward voltage at 1 A, and 5 µA reverse leakage at 25°C - used in DC-DC converters and snubber circuits for high-frequency switching efficiency.

For engineers reviewing the ES1B datasheet, ES1B pinout, ES1B application, or ES1B equivalent, key selection criteria include repetitive peak reverse voltage (100 V), thermal resistance (R_θJL = 35 °C/W), junction temperature range (–55 to +150 °C), and RoHS/halogen-free compliance for industrial power conversion designs.

Technical Context

The ES1B is a single-die, unidirectional silicon rectifier optimized for high-frequency switching applications. Its super fast recovery (t_rr ≤ 35 ns) minimizes switching losses, while glass passivation ensures stable junction performance under thermal cycling and humidity stress.

Designed for automated SMT assembly, the DO-214AC (SMA) package supports reflow soldering per J-STD-002, with matte tin-plated leads, UL 94V-0 molding compound, and JESD201 Class 2 whisker resistance - enabling reliable operation in compact, thermally constrained layouts.

Key Specifications

Pinout & Package

DO-214AC (SMA) surface-mount package with axial lead configuration: cathode indicated by molded band; anode and cathode terminals only; no internal connections beyond the two terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar super fast rectifier applications.

Compared with STTH1R04 and MBR1100, the ES1B delivers optimal balance of 100 V rating, 0.95 V forward drop, and 5 µA leakage at 25°C - making it especially suited for cost-sensitive, thermally constrained 24–48 V industrial DC-DC and lighting applications where leakage and recovery speed are jointly critical.

Availability

ES1B is available at Aetrix Electronics and suitable for DC-DC converters, snubber networks, and LED lighting drivers requiring stable component supply, consistent parametric performance, and long-term production continuity.

Supply support for ES1B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in power rectifiers, TVS diodes, and MOSFETs for industrial and consumer markets.

The ES1B belongs to TSC's ES1x super fast rectifier family, engineered specifically for high-efficiency, high-frequency switching power supplies where low recovery time and tight parameter distribution are essential.

FAQ

What is the maximum repetitive peak reverse voltage rating for ES1B?

The ES1B has a maximum repetitive peak reverse voltage (V_RRM) of 100 V, verified per Taiwan Semiconductor's O2112 datasheet revision. This rating defines the highest reverse voltage the ES1B can block repeatedly without breakdown under normal operating conditions. Exceeding 100 V risks avalanche conduction and permanent damage. The ES1B is part of the ES1x series where voltage grades scale from ES1A (50 V) to ES1J (600 V), and the ES1B is specifically binned and tested to guarantee 100 V performance.

What is the forward voltage drop of ES1B at 1 A and 25°C?

The ES1B exhibits a typical forward voltage (V_F) of 0.95 V at 1 A forward current and 25°C junction temperature, as specified in the Electrical Specifications table of the official datasheet. This value is measured under pulse conditions (PW = 0.3 ms) and represents the conduction loss under nominal load. At higher temperatures (e.g., 125°C), V_F decreases slightly due to semiconductor physics, but system-level thermal design must still ensure junction temperature remains within –55°C to +150°C limits.

Does ES1B have a defined reverse recovery time, and how is it measured?

Yes, the ES1B has a maximum reverse recovery time (t_rr) of 35 ns, measured under standardized conditions: I_F = 0.5 A, I_R = 1.0 A, and I_rr = 0.25 A. This test reflects real-world switching behavior in high-frequency converters. The 35 ns value confirms its classification as a "super fast" rectifier - significantly faster than standard recovery diodes (>500 ns) and suitable for operation up to ~1 MHz without excessive switching loss or ringing.

Is ES1B RoHS compliant and halogen-free?

Yes, the ES1B is fully RoHS compliant per EU Directive 2011/65/EU and halogen-free in accordance with IEC 61249-2-21. These compliance statements are explicitly confirmed in the Features section of the Taiwan Semiconductor ES1A–ES1J datasheet (Version O2112). The device uses matte tin-plated leads and UL 94V-0 compliant molding compound, satisfying environmental requirements for industrial and commercial end equipment.

What is the thermal resistance from junction to lead (R_θJL) for ES1B?

The ES1B has a typical junction-to-lead thermal resistance (R_θJL) of 35 °C/W, as published in the Thermal Performance section of the datasheet. This parameter quantifies how effectively heat transfers from the silicon die to the PCB copper via the leads. With R_θJL = 35 °C/W and a 1 A, 0.95 V dissipation (0.95 W), the junction-to-lead temperature rise is ~33°C - enabling reliable operation on standard FR-4 with minimal copper area, without forced air or heatsinks.