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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Taiwan Semiconductor Corporation ES1BHM2G

Name: ES1BHM2G
Brand: Taiwan Semiconductor Corporation
SKU: ES1BHM2G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ES1BHM2G

Manufacturer:: Taiwan Semiconductor Corporation

Category:: Single Diodes

Package:: DO-214AC, SMA

Datasheet:: ES1BHM2G.pdf

Description:: DIODE GEN PURP 100V 1A DO214AC

Quantity:: RFQ Add To RFQ list

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Inventory:8,962

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Product details

Overview

ES1BHM2G from Taiwan Semiconductor is a 1 A, 100 V super fast recovery surface-mount rectifier diode in DO-214AC (SMA) package, featuring 35 ns reverse recovery time, 0.95 V forward voltage at 1 A, and 30 A peak surge current - deployed in DC-DC converters and snubber circuits for high-frequency switching efficiency.

For engineers reviewing the ES1BHM2G datasheet, ES1BHM2G pinout, ES1BHM2G application, or ES1BHM2G equivalent, key selection criteria include repetitive peak reverse voltage (100 V), thermal resistance (R_θJL = 35 °C/W), junction temperature range (–55 to +150 °C), and RoHS/halogen-free compliance for industrial power conversion designs.

Technical Context

This single-die silicon rectifier uses glass-passivated junction technology to achieve super-fast recovery (t_rr ≤ 35 ns) under IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A test conditions, enabling reduced switching losses in high-frequency SMPS topologies. Its DO-214AC (SMA) package supports automated placement and meets J-STD-020 moisture sensitivity level 1.

The device operates across –55 °C to +150 °C junction temperature range with R_θJA = 85 °C/W and R_θJL = 35 °C/W, and exhibits low leakage (IR ≤ 5 µA at 25 °C, ≤ 100 µA at 125 °C) and stable junction capacitance (16 pF at 1 MHz, VR = 4 V) for predictable high-speed behavior.

Key Specifications

Parameter	Value and Actual Design Meaning
V_RRM	100 V - maximum non-repetitive reverse voltage the diode blocks without breakdown in circuit operation
I_F	1 A continuous - rated average forward current under specified thermal conditions
t_rr	35 ns - measured reverse recovery time enabling efficient operation up to ~10 MHz switching frequencies
V_F	0.95 V @ 1 A, 25 °C - forward voltage drop directly impacting conduction loss and thermal design
I_FSM	30 A - peak non-repetitive surge current capability for handling transient overloads
R_θJL	35 °C/W - junction-to-lead thermal resistance critical for PCB copper pour and heatsinking decisions
Junction temp	–55 to +150 °C - operational range defining suitability for automotive under-hood or industrial ambient environments

Pinout & Package

DO-214AC (SMA) surface-mount package with cathode-indicating band; matte tin-plated leads compliant with J-STD-002 solderability and JESD 201 Class 2 whisker resistance.

Pin/Terminal	Circuit Role	Design Meaning
Anode	Forward current entry point	Connected to lower-potential side of load or switch node in freewheeling path
Cathode	Forward current exit / reverse blocking terminal	Marked by band; ties to higher-potential rail or switch drain/source in flyback/clamp configurations

Key Features

Feature	Design Value
Glass-passivated junction	Enables stable long-term reliability and consistent t_rr performance under thermal cycling
Super fast recovery (35 ns)	Reduces switching loss and EMI generation in >100 kHz DC-DC converters and inverters
Moisture sensitivity level 1	Eliminates need for baking prior to reflow, supporting standard SMT assembly lines
RoHS & halogen-free	Complies with IEC 61249-2-21 and EU RoHS Directive for environmentally regulated end equipment
UL 94V-0 molding compound	Provides flame-retardant encapsulation required for safety-certified power supplies

Applications

DC-DC Converter	Snubber Circuit
Use Scenario: Secondary-side rectification in isolated 12 V/24 V output buck-derived converters operating at 200–500 kHz. IC Role / Device Role / Timing Role: Unidirectional current steering and energy transfer during synchronous or diode-based rectification phase. Use Value: 35 ns t_rr minimizes reverse recovery charge (Q_rr) and associated switching loss, improving overall converter efficiency by ~0.8% at full load.	Use Scenario: RCD clamp network across MOSFET drain-source in flyback or forward converters. IC Role / Device Role / Timing Role: Fast turn-off to capture leakage inductance energy before MOSFET re-conduction. Use Value: Low V_F (0.95 V) and rapid recovery reduce clamp dissipation and improve clamping accuracy versus slower diodes.
Lighting Driver	Freewheeling Diode
Use Scenario: Output rectification in constant-current LED drivers for commercial downlights and street lighting. IC Role / Device Role / Timing Role: High-frequency rectifier in quasi-resonant or active-clamp forward topologies. Use Value: Stable 100 V V_RRM margin over 75 V bus transients and 150 °C TJ rating support sealed, thermally constrained luminaire enclosures.	Use Scenario: Inductive load flyback path in solenoid drivers, relay interfaces, and motor control H-bridge legs. IC Role / Device Role / Timing Role: Provides low-loss current recirculation path when inductive current must be maintained during switch off-time. Use Value: 30 A I_FSM withstands inrush surges from large inductors; 0.95 V V_F limits self-heating during sustained freewheeling.

DC-DC Converter

Snubber Circuit

Use Scenario: Secondary-side rectification in isolated 12 V/24 V output buck-derived converters operating at 200–500 kHz.

IC Role / Device Role / Timing Role: Unidirectional current steering and energy transfer during synchronous or diode-based rectification phase.

Use Value: 35 ns t_rr minimizes reverse recovery charge (Q_rr) and associated switching loss, improving overall converter efficiency by ~0.8% at full load.

Use Scenario: RCD clamp network across MOSFET drain-source in flyback or forward converters.

IC Role / Device Role / Timing Role: Fast turn-off to capture leakage inductance energy before MOSFET re-conduction.

Use Value: Low V_F (0.95 V) and rapid recovery reduce clamp dissipation and improve clamping accuracy versus slower diodes.

Lighting Driver

Freewheeling Diode

Use Scenario: Output rectification in constant-current LED drivers for commercial downlights and street lighting.

IC Role / Device Role / Timing Role: High-frequency rectifier in quasi-resonant or active-clamp forward topologies.

Use Value: Stable 100 V V_RRM margin over 75 V bus transients and 150 °C TJ rating support sealed, thermally constrained luminaire enclosures.

Use Scenario: Inductive load flyback path in solenoid drivers, relay interfaces, and motor control H-bridge legs.

IC Role / Device Role / Timing Role: Provides low-loss current recirculation path when inductive current must be maintained during switch off-time.

Use Value: 30 A I_FSM withstands inrush surges from large inductors; 0.95 V V_F limits self-heating during sustained freewheeling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar super fast rectifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ON Semiconductor MUR110T3G	V_RRM = 100 V, t_rr = 50 ns, V_F = 0.92 V @ 1 A - slower recovery but slightly lower V_F	Higher Q_rr increases switching loss above 300 kHz; suitable for <200 kHz designs	Select when cost sensitivity outweighs high-frequency efficiency needs
Vishay VS-ES1B-M3/5BT	V_RRM = 100 V, t_rr = 35 ns, V_F = 0.97 V @ 1 A - identical speed, marginally higher V_F, same DO-214AC package	No functional deviation; validated in same lighting and converter reference designs	Drop-in alternative with equivalent thermal and electrical behavior

Compared with MUR110T3G, ES1BHM2G delivers lower switching loss in high-frequency converters due to its 15 ns faster recovery; versus VS-ES1B-M3/5BT, it offers identical timing performance but differs in lead finish and tape/reel packaging configuration.

Availability

ES1BHM2G is available at Aetrix Electronics and suitable for DC-DC converters, snubber networks, LED lighting drivers, and freewheeling applications requiring stable component supply, extended temperature operation, and RoHS-compliant sourcing.

Supply support for ES1BHM2G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving global power management and industrial markets since 1979.

The ES1x series is part of TSC's high-efficiency rectifier product line, engineered specifically for high-frequency switching power supplies where low recovery time, tight V_F tolerance, and robust thermal performance are critical.

FAQ

What is the maximum junction temperature rating for ES1BHM2G?

The ES1BHM2G has a maximum junction temperature (T_J) rating of +150 °C and a minimum of –55 °C. This wide operating range allows deployment in thermally demanding environments such as enclosed LED drivers or industrial DC-DC modules. Derating curves confirm usable current capacity down to 0.5 A at 125 °C ambient with appropriate PCB copper area. The ES1BHM2G's thermal performance is validated per JEDEC standards.

Is ES1BHM2G compatible with lead-free reflow soldering processes?

Yes, ES1BHM2G features matte tin-plated leads qualified per J-STD-002 for solderability and complies with J-STD-020 moisture sensitivity level 1 - meaning it can be placed directly into lead-free reflow without pre-baking. Its DO-214AC (SMA) package withstands peak temperatures up to 260 °C for 10 seconds, meeting IPC/JEDEC industry requirements for Pb-free assembly.

What does the 'HM2G' suffix indicate in ES1BHM2G?

The 'HM2G' suffix in ES1BHM2G denotes Taiwan Semiconductor's packaging and environmental coding: 'H' indicates halogen-free construction per IEC 61249-2-21, 'M2' specifies tape-and-reel packaging (7,500 units per reel), and 'G' signifies RoHS-compliant finish. This distinguishes ES1BHM2G from non-halogen or bulk-packaged variants like ES1BH.

How does ES1BHM2G compare to ES1AHM2G in terms of electrical performance?

ES1BHM2G and ES1AHM2G share identical package, thermal specs, and recovery time (35 ns), but differ in V_RRM: ES1BHM2G is rated for 100 V versus 50 V for ES1AHM2G. Their forward voltage is identical (0.95 V @ 1 A), making ES1BHM2G a direct upgrade where higher reverse voltage margin is needed - e.g., in 24 V systems with 100 V transient spikes.

Can ES1BHM2G be used in place of a Schottky diode in high-frequency applications?

ES1BHM2G is not a Schottky diode and exhibits higher forward voltage (0.95 V vs typical 0.4–0.6 V) but offers superior reverse voltage rating (100 V vs usually ≤ 60 V for comparably rated Schottkys) and negligible reverse recovery tail current. It is preferred over Schottkys where V_RRM > 60 V or high-temperature stability (>125 °C) is required - though system-level efficiency trade-offs must be evaluated case by case using the ES1BHM2G's full datasheet parameters.

ES1BHM2G Specifications

Product attributes: Attribute value

Manufacturer:: Taiwan Semiconductor Corporation

Series:: -

Package/Case:: DO-214AC, SMA

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

Technology:: Standard

Voltage - DC Reverse (Vr) (Max):: 100 V

Current - Average Rectified (Io):: 1A

Voltage - Forward (Vf) (Max) @ If:: 950 mV @ 1 A

Speed:: Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr):: 35 ns

Current - Reverse Leakage @ Vr:: 5 µA @ 100 V

Capacitance @ Vr, F:: 16pF @ 4V, 1MHz

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: DO-214AC (SMA)

Operating Temperature - Junction:: -55°C ~ 150°C

ES1BHM2G FAQ

1.How can I place an order for ES1BHM2G through Aetrix?

Please submit a Request for Quotation (RFQ) for ES1BHM2G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ES1BHM2G reliable?

The price and inventory of ES1BHM2G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ES1BHM2G is usually 5 days.

3.What payment methods are accepted for ES1BHM2G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ES1BHM2G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ES1BHM2G?

ES1BHM2G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ES1BHM2G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ES1BHM2G?

For technical support, including ES1BHM2G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ES1BHM2G requirements.

6.How does Aetrix verify that ES1BHM2G is sourced from the original manufacturer or authorized distributors?

All ES1BHM2G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ES1BHM2G meets industry standards.

7.What is the process for return or replacement of ES1BHM2G?

All ES1BHM2G units undergo pre-shipment inspection (PSI). If there is an issue with ES1BHM2G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ES1BHM2G part is unused and in its original packaging.

Return procedure for ES1BHM2G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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