Taiwan Semiconductor Corporation ES1B R3G

Overview

ES1B R3G from Taiwan Semiconductor is a 1 A, 100 V super fast recovery surface-mount rectifier diode in DO-214AC (SMA) package, with 35 ns reverse recovery time, 0.95 V forward voltage at 1 A, and 30 A peak surge current - used in DC-DC converters and snubber circuits.

For engineers reviewing the ES1B R3G datasheet, ES1B R3G pinout, ES1B R3G application, or ES1B R3G equivalent, key selection criteria include V_RRM = 100 V, I_F = 1 A, t_rr = 35 ns, thermal resistance R_θJA = 85 °C/W, and DO-214AC mechanical compatibility for high-frequency switching power supplies.

Technical Context

This single-die, glass-passivated silicon rectifier delivers super-fast recovery (t_rr ≤ 35 ns) under I_F = 0.5 A, I_R = 1.0 A, I_rr = 0.25 A test conditions, enabling high-efficiency operation in switching-mode power supplies above 100 kHz. Its low Q_rr and 16 pF junction capacitance minimize switching losses and EMI generation.

The device operates across –55 °C to +150 °C junction temperature range, with R_θJL = 35 °C/W ensuring effective lead-to-junction heat transfer during pulsed conduction. Moisture sensitivity level 1 (J-STD-020) supports standard SMT reflow without baking.

Key Specifications

Pinout & Package

DO-214AC (SMA) surface-mount package with cathode-indicated band; matte tin-plated leads compliant with J-STD-002 solderability and JESD 201 Class 2 whisker resistance; UL 94V-0 molding compound.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar super fast rectifier applications.

Compared with VS-ES1BHM3/5BT and ON Semi ES1B, the ES1B R3G offers identical core performance (100 V, 1 A, 35 ns), guaranteed halogen-free construction, and documented MSL Level 1 - making it optimal for automotive-qualified or high-reliability industrial production where material compliance is audited.

Availability

ES1B R3G is available at Aetrix Electronics and suitable for DC–DC converters, snubber circuits, and LED lighting drivers requiring stable component supply, consistent parametric performance, and full RoHS/halogen-free compliance.

Supply support for ES1B R3G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in rectifiers, TVS diodes, MOSFETs, and bipolar transistors since 1979.

The ES1x series was designed specifically for high-frequency switching power conversion - emphasizing fast recovery, low forward voltage, and robust thermal performance in compact SMA packages for space-constrained power supplies.

FAQ

What is the maximum junction temperature rating for ES1B R3G?

The ES1B R3G has a maximum junction temperature (T_J) of +150 °C, verified per absolute maximum ratings table in the official Taiwan Semiconductor datasheet. This rating allows reliable operation in thermally demanding environments such as enclosed LED drivers or industrial DC–DC modules. Derating begins above 75 °C lead temperature, and the device maintains full 1 A current capability up to that point. The ES1B R3G's thermal design supports this rating via R_θJL = 35 °C/W and R_θJA = 85 °C/W on standard PCBs.

Is ES1B R3G pin-compatible with other DO-214AC rectifiers like ES1A or ES1C?

Yes, ES1B R3G shares the same DO-214AC (SMA) package, anode/cathode pin configuration, and polarity marking (cathode band) as all ES1x family members including ES1A and ES1C. Mechanical and solder pad layout are fully interchangeable. However, V_RRM differs: ES1A = 50 V, ES1B R3G = 100 V, ES1C = 150 V - so substitution requires verification of reverse voltage margin in the target circuit. The ES1B R3G is not electrically interchangeable without checking system-level blocking requirements.

Does ES1B R3G meet J-STD-020 moisture sensitivity level 1?

Yes, ES1B R3G is rated MSL Level 1 per J-STD-020, confirmed in the "Features" section of the Taiwan Semiconductor ES1A–ES1J datasheet (Version O2112). This means the device may be stored indefinitely at ≤30 °C/60% RH and placed directly into standard SMT reflow profiles (e.g., JEDEC J-STD-020D) without preconditioning or baking. This eliminates handling overhead and supports high-yield automated assembly - a key advantage of the ES1B R3G in volume manufacturing.

What is the reverse recovery time test condition for ES1B R3G?

The reverse recovery time (t_rr) of 35 ns for ES1B R3G is measured under the specific condition: I_F = 0.5 A, I_R = 1.0 A, I_rr = 0.25 A, per the Electrical Specifications table. This reflects real-world switching behavior in high-frequency converters. The ES1B R3G achieves this performance using a super-fast epitaxial structure and optimized carrier lifetime control - critical for minimizing switching loss in 200–500 kHz power stages where the ES1B R3G is commonly deployed.

Is ES1B R3G halogen-free and RoHS-compliant?

Yes, ES1B R3G is both halogen-free per IEC 61249-2-21 and RoHS-compliant per EU Directive 2011/65/EU, as explicitly stated in the "Features" section of the official Taiwan Semiconductor datasheet. The molding compound contains no brominated or chlorinated flame retardants, and lead content is below 1000 ppm. These certifications are integral to the ES1B R3G's qualification for use in consumer, industrial, and medical-adjacent equipment where environmental compliance is contractually enforced.