Taiwan Semiconductor Corporation ES1DFS
- Part No.:
- ES1DFS
- Manufacturer:
- Taiwan Semiconductor Corporation
- Category:
- Single Diodes
- Package:
- SOD-128
- Datasheet:
-
ES1DFS.pdf
- Description:
- DIODE GEN PURP 200V 1A SOD128
- Quantity:
- Payment:

- Shipping:

Inventory:34,745
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
ES1DFS from Taiwan Semiconductor is a 1 A, 200 V super fast surface-mount rectifier in SOD-128 package, featuring 35 ns reverse recovery time, 0.95 V max forward voltage at 1.0 A/25°C, and 30 A surge current capability. It serves as a freewheeling or output rectifier in high-frequency switching power supplies.
For engineers reviewing the ES1DFS datasheet, ES1DFS pinout, ES1DFS application, or ES1DFS equivalent, key selection criteria include its 200 V repetitive peak reverse voltage, low thermal resistance (RθJL = 28 °C/W), and verified performance across -55°C to +150°C junction temperature range.
Technical Context
The ES1DFS uses a single-die, glass-passivated silicon junction optimized for high-speed switching with minimal stored charge. Its 35 ns trr and low CJ (18 pF at 1 MHz, 4 V) support operation in DC–DC converters up to several hundred kHz.
Thermally, it delivers RθJL = 28 °C/W and RθJA = 67 °C/W on a 5 mm × 5 mm Cu pad, enabling reliable 1 A continuous conduction in compact layouts without forced airflow.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 200 V - maximum repetitive reverse blocking voltage; defines safe operating limit in flyback or buck output stages |
| IF | 1 A - continuous forward current rating; supports typical 5–12 V/1 A SMPS outputs |
| trr | 35 ns - reverse recovery time; enables efficient operation above 200 kHz switching frequencies |
| VF (max) | 0.95 V @ 1.0 A, 25°C - low conduction loss; reduces heat generation vs. standard rectifiers |
| IFSM | 30 A @ 8.3 ms - surge withstand capability; handles startup inrush and transient overloads |
| RθJL | 28 °C/W - junction-to-lead thermal resistance; allows direct PCB copper thermal path for passive cooling |
| CJ | 18 pF @ 1 MHz, 4 V - low junction capacitance; minimizes switching noise and EMI in high-dV/dt circuits |
Pinout & Package
Package: SOD-128 - low-profile, surface-mount plastic package with matte tin-plated leads, moisture sensitivity level 1, UL 94V-0 rated molding compound, and cathode band polarity marking.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Connected to lower-potential node (e.g., switch node in buck, transformer secondary center-tap) |
| Cathode | Forward current exit / reverse blocking terminal | Marked by band; connects to output filter capacitor positive rail or load return |
Key Features
| Feature | Design Value |
|---|---|
| Glass passivated junction | Ensures long-term reliability and stable leakage current (<1 µA @ 25°C) under humid or thermally cycling conditions |
| Super fast recovery (35 ns) | Reduces switching losses and ringing in high-frequency SMPS, improving efficiency over standard FR/UF diodes |
| Low profile SOD-128 package | Enables dense PCB layouts with 1.1 mm max height; compatible with automated reflow and AOI inspection |
| Halogen-free & RoHS compliant | Meets IEC 61249-2-21 and EU RoHS directives; suitable for consumer and industrial end-equipment compliance |
Applications
| DC–DC Converter Output Rectification | Switching Mode Inverter Freewheeling |
|---|---|
Use Scenario: Secondary-side rectification in isolated 5–24 V, 1 A DC–DC modules using active clamp or synchronous topology. IC Role / Device Role / Timing Role: Unidirectional current valve converting high-frequency AC from transformer secondary into regulated DC output. Use Value: 0.95 V VF limits conduction loss to <0.95 W; 35 ns trr prevents reverse recovery shoot-through in hard-switched designs. | Use Scenario: Freewheeling path for inductive loads (e.g., motor windings, solenoids) in 200 V-class inverters. IC Role / Device Role / Timing Role: Provides low-loss recirculation path during MOSFET off-time to clamp inductive kickback. Use Value: 200 V VRRM safely blocks inverter bus voltage spikes; 30 A IFSM absorbs short-circuit energy without failure. |
| AC–DC Adapter Secondary Rectifier | Industrial Power Supply Snubber Diode |
Use Scenario: Output rectification in universal-input (90–264 VAC), 12 V/1 A wall adapters with flyback topology. IC Role / Device Role / Timing Role: Converts transformer secondary AC waveform into smoothed DC for linear post-regulation or USB-PD interface. Use Value: 150°C TJMAX ensures margin under sealed enclosure thermal stress; SOD-128 footprint simplifies layout versus DO-214AA. | Use Scenario: Clamp diode in RCD snubber networks across primary-side MOSFETs in 200 V-rated industrial SMPS. IC Role / Device Role / Timing Role: Rapidly conducts snubber capacitor discharge pulse to limit MOSFET VDS overshoot during turn-off. Use Value: 35 ns trr and low Qrr minimize snubber energy loss; 28 °C/W RθJL enables direct mounting to heatsink pad. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar super fast rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STTH1R02 | Same 1 A / 200 V rating; 30 ns trr, slightly lower VF (0.85 V typ @ 1 A); TO-277 package | TO-277 has higher thermal mass but larger footprint than SOD-128; less suitable for ultra-thin designs | Select STTH1R02 when board-level thermal mass improves reliability under sustained 1 A load |
| ON Semi MUR120 | 1 A / 200 V; 60 ns trr, higher VF (1.1 V max); same SOD-128 package | Slower recovery increases switching loss above 100 kHz; acceptable in lower-frequency flybacks | Choose MUR120 only if cost priority outweighs efficiency and EMI targets in <100 kHz designs |
Compared with STTH1R02 and MUR120, the ES1DFS offers optimal balance of speed (35 ns), low VF, and compact SOD-128 packaging-making it preferred for space-constrained, high-efficiency 200 V rectification where thermal path design leverages its 28 °C/W RθJL.
Availability
ES1DFS is available at Aetrix Electronics and suitable for DC–DC converter output rectification, switching mode inverter freewheeling, and industrial power supply snubber applications requiring stable component supply and consistent parametric performance across production lots.
Supply support for ES1DFS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in power rectifiers, TVS devices, and MOSFETs for industrial and computing markets.
The ES1BFS–ES1JFS family was designed specifically for high-frequency, high-reliability rectification in compact power supplies-emphasizing fast recovery, low thermal resistance, and robust JEDEC-compliant packaging.
FAQ
What is the maximum junction temperature rating for ES1DFS?
The ES1DFS has a maximum junction temperature (TJMAX) of +150°C, validated per absolute maximum ratings in the official Taiwan Semiconductor datasheet. This rating applies under continuous operation with proper PCB thermal design-specifically a 5 mm × 5 mm copper pad-as confirmed in the thermal performance section. Derating curves show usable current down to 0.5 A at 125°C ambient, ensuring robustness in enclosed industrial environments. The ES1DFS must not exceed this limit to maintain reliability and parametric stability.
Does ES1DFS have a specified reverse recovery time, and how is it measured?
Yes, the ES1DFS specifies a reverse recovery time (trr) of ≤35 ns, measured under standardized conditions: IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A, per the Electrical Specifications table. This value reflects actual device behavior-not typical or guaranteed-and is critical for predicting switching loss in high-frequency topologies. The ES1DFS achieves this via optimized carrier lifetime control in its super fast silicon junction, distinguishing it from standard or fast recovery alternatives.
What is the forward voltage drop of ES1DFS at full rated current and elevated temperature?
At 1.0 A forward current and 125°C junction temperature, the ES1DFS exhibits a maximum forward voltage (VF) of 0.81 V, as specified in the Electrical Specifications table. This value is 14% lower than its 25°C counterpart (0.95 V), demonstrating beneficial negative temperature coefficient behavior. Designers can rely on this data for accurate thermal modeling in high-ambient applications, since the ES1DFS maintains low conduction loss even under thermal stress.
Is ES1DFS compatible with lead-free reflow soldering processes?
Yes, the ES1DFS features matte tin-plated leads qualified per J-STD-002 for solderability and complies with moisture sensitivity level 1 per J-STD-020-meaning it can be stored indefinitely at ≤30°C/60% RH without baking prior to reflow. Its SOD-128 package supports standard lead-free reflow profiles (peak 260°C), and the UL 94V-0 molding compound ensures no delamination or popcorning. These attributes make ES1DFS fully compatible with modern high-volume manufacturing flows.
How does the junction capacitance of ES1DFS affect high-frequency circuit performance?
The ES1DFS has a typical junction capacitance (CJ) of 18 pF at 1 MHz and 4 V reverse bias. This low value minimizes displacement current during rapid voltage transitions, reducing EMI generation and gate drive loading in half-bridge or LLC resonant circuits. When used in snubber or clamp roles, this CJ contributes predictably to timing constants-verified in the Characteristics Curves (Fig.2). Designers should account for this fixed 18 pF in layout parasitic simulations, as it directly impacts ringing frequency in high-dV/dt nodes.
ES1DFS Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Taiwan Semiconductor Corporation
- Series:
- -
- Package/Case:
- SOD-128
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 200 V
- Current - Average Rectified (Io):
- 1A
- Voltage - Forward (Vf) (Max) @ If:
- 950 mV @ 1 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 35 ns
- Current - Reverse Leakage @ Vr:
- 1 µA @ 200 V
- Capacitance @ Vr, F:
- 18pF @ 4V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOD-128
- Operating Temperature - Junction:
- -55°C ~ 150°C
ES1DFS FAQ
1.How can I place an order for ES1DFS through Aetrix?
Please submit a Request for Quotation (RFQ) for ES1DFS on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ES1DFS reliable?
The price and inventory of ES1DFS are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ES1DFS is usually 5 days.
3.What payment methods are accepted for ES1DFS?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ES1DFS transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ES1DFS?
ES1DFS orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ES1DFS order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ES1DFS?
For technical support, including ES1DFS datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ES1DFS requirements.
6.How does Aetrix verify that ES1DFS is sourced from the original manufacturer or authorized distributors?
All ES1DFS products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ES1DFS meets industry standards.
7.What is the process for return or replacement of ES1DFS?
All ES1DFS units undergo pre-shipment inspection (PSI). If there is an issue with ES1DFS, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ES1DFS part is unused and in its original packaging.
Return procedure for ES1DFS:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
ES1DFS Tags

-
1N4448X-TP
Micro Commercial Co

-
1N4148WX-TP
Micro Commercial Co

-
1N4148TR
onsemi

-
MMSD4148T1G
onsemi

-
MMBD914LT3G
onsemi

-
BAS16HT1G
onsemi

-
1N914BWT
onsemi

-
BAS21LT1G
onsemi

-
LL4148
onsemi

-
BAS16LT1G
onsemi

-
MMSD914T1G
onsemi

-
BAV21W-7-F
Diodes Incorporated
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
