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Taiwan Semiconductor Corporation ES1DHR3G
- Part No.:
- ES1DHR3G
- Manufacturer:
- Taiwan Semiconductor Corporation
- Category:
- Single Diodes
- Package:
- DO-214AC, SMA
- Datasheet:
-
ES1DHR3G.pdf
- Description:
- DIODE GEN PURP 200V 1A DO214AC
- Quantity:
- Payment:
- Shipping:
Inventory:3,289
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Product details
Overview
ES1DHR3G from Taiwan Semiconductor is a 1 A, 200 V super fast recovery surface-mount rectifier diode in DO-214AC (SMA) package, featuring 35 ns reverse recovery time, 0.95 V forward voltage at 1 A, and 30 A peak surge current - used for freewheeling and snubber functions in DC-DC converters.
For engineers reviewing the ES1DHR3G datasheet, ES1DHR3G pinout, ES1DHR3G application, or ES1DHR3G equivalent, key selection criteria include VRRM = 200 V, IF = 1 A, trr = 35 ns, thermal resistance RθJA = 85 °C/W, and DO-214AC mechanical compatibility with automated SMT placement.
Technical Context
This single-die silicon rectifier employs glass passivated junction technology to achieve stable high-speed switching performance across -55°C to +150°C operating range. Its 35 ns reverse recovery time enables efficient operation in high-frequency switching topologies up to several hundred kHz.
The device supports repetitive peak reverse voltage of 200 V and RMS reverse voltage of 140 V, with low leakage (≤5 µA at 25°C, ≤100 µA at 125°C) and junction capacitance of 16 pF at 4 V - critical for minimizing switching losses and EMI in compact power stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 200 V - maximum non-repetitive reverse blocking voltage; defines safe operating limit in flyback or boost snubber circuits |
| IF | 1 A continuous forward current - sets steady-state conduction capability in low-power DC-DC output rectification |
| trr | 35 ns - ultra-fast recovery enables high-frequency switching (>200 kHz) with minimal reverse recovery loss |
| VF | 0.95 V @ 1 A, 25°C - low forward drop reduces conduction loss and thermal load in space-constrained layouts |
| RθJA | 85 °C/W - thermal resistance from junction to ambient; requires minimal PCB copper area for 1 A operation at TA ≤ 70°C |
| IFSM | 30 A @ 8.3 ms - surge rating supports inrush and transient overload conditions without failure |
| CJ | 16 pF @ 1 MHz, 4 V - low junction capacitance minimizes capacitive coupling and switching noise in high-dV/dt environments |
Pinout & Package
DO-214AC (SMA) surface-mount package with cathode-indicating band; matte tin-plated leads compliant with J-STD-002 solderability and JESD 201 Class 2 whisker resistance; UL 94V-0 molding compound.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Connected to lower-potential node (e.g., switch node in buck converter); polarity must align with schematic symbol |
| Cathode | Forward current exit / reverse blocking terminal | Marked by band; ties to higher-potential rail (e.g., output capacitor positive); determines unidirectional conduction path |
Key Features
| Feature | Design Value |
|---|---|
| Glass passivated junction | Ensures long-term reliability and stable VF/IR performance under thermal cycling and humidity exposure |
| Moisture sensitivity level 1 | Eliminates bake requirement prior to reflow; compatible with standard SMT assembly lines without floor-life constraints |
| Super fast 35 ns recovery | Reduces reverse recovery charge (Qrr) and associated switching loss versus standard fast rectifiers (e.g., 100–500 ns) |
| RoHS & halogen-free | Meets IEC 61249-2-21 and EU RoHS directives; suitable for environmentally regulated industrial and consumer end equipment |
Applications
| DC-DC Converter Output Rectification | Snubber Network Diode |
|---|---|
Use Scenario: Secondary-side rectification in isolated 5–24 V, 1–5 W flyback or forward converters powering IoT sensors or LED drivers. IC Role / Device Role / Timing Role: Unidirectional current path enabling energy transfer from transformer secondary to output capacitor during switch-off phase. Use Value: 0.95 V VF and 35 ns trr jointly reduce conduction + switching losses, improving efficiency by ~1.2% over standard FR107 at 100 kHz. | Use Scenario: RC snubber across MOSFET drain-source in 65–130 kHz SMPS to suppress voltage spikes and ringing. IC Role / Device Role / Timing Role: Fast clamping element that conducts only during MOSFET turn-off dv/dt events, absorbing inductive energy. Use Value: 200 V VRRM and 35 ns trr ensure reliable clamping without oscillation or delayed turn-on that could increase stress on the main switch. |
| Freewheeling Diode in Buck Regulator | Lighting Driver Freewheel Path |
Use Scenario: Low-side freewheeling path in 12 V input, 3.3/5 V output synchronous buck regulators for embedded microcontrollers. IC Role / Device Role / Timing Role: Provides continuous current path for inductor current when high-side switch is off, maintaining regulation during duty cycle transitions. Use Value: 1 A IF rating and 85 °C/W RθJA allow direct PCB mounting without heatsink in thermally constrained 10 × 10 mm modules. | Use Scenario: Current recirculation path in constant-current LED driver ICs driving 1–3串联 white LEDs at 350 mA. IC Role / Device Role / Timing Role: Completes inductive energy loop during PWM dimming off-time, preventing LED current collapse and flicker. Use Value: 30 A IFSM withstands brief overcurrents during LED short-circuit fault detection cycles without degradation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar super fast rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STTH1R02U | VRRM = 200 V, trr = 30 ns, VF = 0.92 V @ 1 A - slightly faster but same package and rating | Optimized for <100 kHz telecom PSUs; tighter VF tolerance (±0.03 V) | Prefer when lowest possible Qrr is critical and STMicro sourcing is preferred |
| MBR120ESF | Schottky structure; VF = 0.52 V @ 1 A but VRRM = 20 V only - not interchangeable for 200 V blocking | Only suitable for low-voltage (<30 V) OR-ing or reverse polarity protection, not snubbers or flyback outputs | Select only if system VRRM requirement is ≤20 V and ultra-low VF is prioritized over blocking capability |
Compared with STTH1R02U, ES1DHR3G offers identical voltage/current ratings but marginally slower recovery; versus MBR120ESF, it provides 10× higher VRRM at the cost of higher VF, making ES1DHR3G the sole viable option for 200 V-class switching applications requiring robust reverse blocking.
Availability
ES1DHR3G is available at Aetrix Electronics and suitable for DC-DC converters, snubber networks, freewheeling paths, and lighting drivers requiring stable component supply with full traceability and no obsolescence risk through 2028.
Supply support for ES1DHR3G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving industrial, computing, and consumer markets since 1979.
The ES1x series was developed specifically for high-efficiency, high-frequency AC/DC and DC/DC power conversion, targeting cost-sensitive yet thermally demanding applications where reliability and SMT compatibility are essential.
FAQ
What is the maximum junction temperature rating for ES1DHR3G?
The ES1DHR3G has a maximum junction temperature (TJ) of +150°C, with operational capability down to -55°C. This rating allows use in sealed enclosures or high-ambient environments such as industrial motor drives or outdoor LED luminaires where internal temperatures may exceed 85°C. Derating curves confirm 1 A continuous current is maintainable up to 70°C ambient with standard PCB layout.
Does ES1DHR3G meet RoHS and halogen-free requirements?
Yes, ES1DHR3G is RoHS compliant and halogen-free per IEC 61249-2-21. The molding compound contains no brominated flame retardants or chlorine-based additives, and lead content is below 1000 ppm. This compliance enables use in EU, Japan, and China-regulated end products including medical peripherals and smart home devices.
What is the reverse recovery time specification for ES1DHR3G and how is it tested?
The ES1DHR3G reverse recovery time (trr) is 35 ns, measured under IF = 0.5 A, IR = 1.0 A, and Irr = 0.25 A per JEDEC test conditions. This value reflects actual switching behavior in hard-commutated circuits and is validated using standardized double-pulse test setups - not extrapolated or simulated. It directly impacts switching loss in 100–500 kHz power stages.
Can ES1DHR3G replace ES1BHR3G in an existing design?
ES1DHR3G can replace ES1BHR3G only if the circuit requires ≥200 V reverse blocking. ES1BHR3G is rated for 100 V VRRM, while ES1DHR3G is rated for 200 V - offering higher margin against voltage transients. Forward characteristics (VF, trr) are identical within tolerance, and both share DO-214AC packaging and pinout, enabling drop-in replacement where voltage headroom is needed.
What is the moisture sensitivity level (MSL) of ES1DHR3G and does it require baking before reflow?
ES1DHR3G has Moisture Sensitivity Level 1 per J-STD-020, meaning it is not moisture-sensitive and does not require dry-packaging, floor-life tracking, or pre-reflow baking. It can be stored indefinitely at ambient conditions and placed directly into standard lead-free reflow profiles (peak 260°C), simplifying manufacturing logistics and reducing process risk.
ES1DHR3G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Taiwan Semiconductor Corporation
- Series:
- -
- Package/Case:
- DO-214AC, SMA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 200 V
- Current - Average Rectified (Io):
- 1A
- Voltage - Forward (Vf) (Max) @ If:
- 950 mV @ 1 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 35 ns
- Current - Reverse Leakage @ Vr:
- 5 µA @ 200 V
- Capacitance @ Vr, F:
- 16pF @ 4V, 1MHz
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AC (SMA)
- Operating Temperature - Junction:
- -55°C ~ 150°C
ES1DHR3G FAQ
1.How can I place an order for ES1DHR3G through Aetrix?
Please submit a Request for Quotation (RFQ) for ES1DHR3G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for ES1DHR3G reliable?
The price and inventory of ES1DHR3G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ES1DHR3G is usually 5 days.
3.What payment methods are accepted for ES1DHR3G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ES1DHR3G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for ES1DHR3G?
ES1DHR3G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your ES1DHR3G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for ES1DHR3G?
For technical support, including ES1DHR3G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ES1DHR3G requirements.
6.How does Aetrix verify that ES1DHR3G is sourced from the original manufacturer or authorized distributors?
All ES1DHR3G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ES1DHR3G meets industry standards.
7.What is the process for return or replacement of ES1DHR3G?
All ES1DHR3G units undergo pre-shipment inspection (PSI). If there is an issue with ES1DHR3G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The ES1DHR3G part is unused and in its original packaging.
Return procedure for ES1DHR3G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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