Taiwan Semiconductor Corporation ES1GLW

Overview

ES1GLW from Taiwan Semiconductor is a 1A, 400V super fast surface-mount rectifier diode in SOD-123W package, featuring 35ns reverse recovery time, 1.30V max forward voltage at 1A/25°C, and 30A peak surge current-designed for high-frequency switching mode power supplies in DC-DC converters.

For engineers reviewing the ES1GLW datasheet, ES1GLW pinout, ES1GLW application, or ES1GLW equivalent, key selection criteria include repetitive peak reverse voltage (400V), thermal resistance (R_θJL = 25°C/W), junction temperature range (–55°C to +175°C), and RoHS/halogen-free compliance for industrial-grade power conversion designs.

Technical Context

The ES1GLW is a single-die, glass-passivated silicon PN junction rectifier optimized for high-speed switching. Its 35ns trr and low Q_rr minimize switching losses in 100kHz–500kHz SMPS topologies, while the SOD-123W package enables automated placement and supports continuous 1A conduction with derating above 75°C ambient.

It operates across –55°C to +175°C junction temperature, with 5µA max reverse leakage at 25°C and 100µA at 125°C under rated V_RRM, and exhibits 20pF junction capacitance at 4V reverse bias-critical for EMI control in compact flyback and buck converter layouts.

Key Specifications

Pinout & Package

SOD-123W surface-mount package: 2-terminal, low-profile (1.2mm height), matte tin-plated leads, cathode indicated by band. Moisture sensitivity level 1 (J-STD-020), UL 94V-0 molding compound, JESD201 Class 2 whisker resistant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar rectifier applications.

Compared with MUR140 and VS-1EWH04-M3, ES1GLW delivers optimal balance of SMT manufacturability, thermal performance (25°C/W R_θJL), and cost for mid-power DC-DC and auxiliary supply rectification-without requiring layout changes or thermal redesign.

Availability

ES1GLW is available at Aetrix Electronics and suitable for DC-DC converters, switching inverters, and freewheeling applications requiring stable component supply, consistent parametric performance, and long-term industrial lifecycle support.

Supply support for ES1GLW includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in power rectifiers, TVS devices, and MOSFETs for industrial and computing markets.

The ES1xLW series was developed specifically for high-efficiency, high-reliability surface-mount rectification in compact power supplies-emphasizing low trr, tight V_F distribution, and J-STD-020 Level 1 moisture robustness.

FAQ

What is the maximum junction temperature rating for ES1GLW?

The ES1GLW has a maximum junction temperature (T_JMAX) of +175°C, verified per absolute maximum ratings table in the official Taiwan Semiconductor datasheet Version C2103. This rating applies across the full operating current range and enables reliable use in enclosed industrial environments where ambient temperatures exceed 85°C. The ES1GLW maintains specified electrical parameters up to this limit when thermal design respects R_θJL = 25°C/W.

Does ES1GLW have a RoHS and halogen-free certification?

Yes, ES1GLW is RoHS compliant and halogen-free per IEC 61249-2-21, as explicitly stated in the "Features" section of the Taiwan Semiconductor datasheet. The SOD-123W package uses halogen-free molding compound and matte tin-plated leads meeting J-STD-002 solderability standards-making ES1GLW suitable for consumer and industrial products subject to EU environmental directives.

What is the reverse recovery time (t_rr) of ES1GLW and how is it tested?

The ES1GLW reverse recovery time is 35ns, measured under conditions of I_F = 0.5A, I_R = 1.0A, and I_rr = 0.25A, as defined in the Electrical Specifications table. This value is confirmed in the "Characteristics Curves" section and reflects actual device behavior in high-frequency switching applications-not a typical or guaranteed minimum. The test method follows JEDEC-standard double-pulse methodology.

Can ES1GLW replace ES1DLW or ES1JLW in the same PCB layout?

Yes, ES1GLW shares identical SOD-123W package dimensions, pinout, and pad layout with ES1DLW and ES1JLW-only the V_RRM rating differs (200V, 400V, 600V respectively). All three use the same marking code format (EGLW), thermal resistance (25°C/W), and mechanical construction. No PCB changes are required when upgrading from ES1DLW to ES1GLW for improved voltage margin in 24V–48V systems.

What is the forward voltage (V_F) of ES1GLW at elevated temperature?

The ES1GLW forward voltage increases with junction temperature: while V_F is ≤1.30V at 25°C and 1A, it rises to approximately 1.15V at 125°C due to negative temperature coefficient of silicon PN junctions. This behavior is confirmed by the "Typical Forward Characteristics" curve (Figure 4) in the datasheet, which shows V_F vs. I_F across multiple T_J points. Designers should use the 125°C curve for worst-case conduction loss analysis.