onsemi ES1J

Overview

ES1J from Diodes Incorporated is a 1.0A, 600V super-fast recovery surface-mount rectifier diode in SMA package, featuring 35ns reverse recovery time, 1.30V forward voltage at 1.0A, and 30A non-repetitive surge capability - used in high-frequency switch-mode power supplies, AC/DC adapters, and DC-DC converters.

For engineers reviewing the ES1J datasheet, ES1J pinout, ES1J application, or ES1J equivalent, key selection criteria include reverse recovery time (35ns max), thermal resistance (RθJT = 30°C/W), peak repetitive reverse voltage (600V), forward voltage drop (1.30V @ 1.0A), and RoHS-compliant lead-free construction.

Technical Context

The ES1J operates as a unidirectional silicon junction rectifier optimized for high-frequency switching applications. Its super-fast recovery (tRR ≤ 35ns) minimizes switching losses in SMPS topologies, while its 600V VRRM rating supports universal-input offline designs.

Thermally, it delivers 1.0A average rectified current at terminal temperature up to +110°C, enabled by low RθJT (30°C/W) when mounted on a 5.0mm² copper pad. Reverse leakage remains ≤5.0µA at 25°C and ≤200µA at 125°C under rated blocking voltage.

Key Specifications

Pinout & Package

Package: SMA (DO-214AC), surface-mount molded plastic case with matte tin–annealed copper leadframe, UL 94V-0 rated, polarity indicated by cathode band.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar super-fast rectifier applications.

Compared with STTH1R06 and SB160, the ES1J uniquely balances 600V blocking, 35ns speed, and 5µA leakage - making it optimal for universal-input SMPS where both voltage margin and high-frequency efficiency are required.

Availability

ES1J is available at Aetrix Electronics and suitable for AC/DC adapters, switch-mode power supplies, and automotive infotainment systems requiring stable component supply, RoHS compliance, and consistent thermal performance across production volumes.

Supply support for ES1J includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The ES1J belongs to Diodes' high-efficiency rectifier product line, engineered specifically for high-frequency power conversion in space-constrained, thermally demanding applications such as compact chargers and industrial power modules.

FAQ

What is the maximum operating junction temperature for the ES1J?

The ES1J has an operating junction temperature range of –55°C to +150°C. Its thermal resistance (RθJT = 30°C/W) means that at 1.0A DC current and 1.30V forward drop, junction temperature rise above terminal temperature is approximately 39°C - allowing safe operation up to +110°C terminal temperature per derating curve.

Is the ES1J suitable for use in automotive-grade designs?

The ES1J is not AEC-Q101 qualified out-of-the-box, but Diodes offers automotive-grade variants (e.g., ES1J-AU) with PPAP documentation, IATF 16949 manufacturing, and extended temperature validation. Standard ES1J may be used in non-safety-critical infotainment subsystems if validated per customer qualification protocols.

How does the ES1J's reverse recovery time compare to standard rectifiers like 1N4007?

The ES1J's tRR (30–35ns) is over 1,000× faster than the 1N4007 (≈2–4µs), enabling efficient operation in switch-mode circuits above 50kHz. This eliminates excessive heating and EMI caused by slow recovery in high-frequency topologies where 1N4007 would fail catastrophically.

Can the ES1J replace a Schottky diode in low-voltage applications?

No - the ES1J is a PN-junction rectifier with 1.30V VF and 600V rating, whereas Schottky diodes offer ~0.3–0.5V VF but typically max out at 100V. Substituting ES1J for a Schottky in ≤24V circuits increases conduction loss and negates low-VF advantage; it also risks excessive leakage if reverse voltage is near rating.