Diodes Incorporated ES3DB-13

Overview

ES3DB-13 from Diodes Incorporated is a 200 V, 3.0 A surface-mount super-fast rectifier in SMB package, featuring 25 ns reverse recovery time, 0.9 V forward voltage at 3.0 A, and 100 A non-repetitive surge capability - deployed in AC/DC front-end rectification for compact power adapters and LED drivers.

For engineers reviewing the ES3DB-13 datasheet, ES3DB-13 pinout, ES3DB-13 application, or ES3DB-13 equivalent, key selection criteria include peak reverse voltage rating (200 V), fast recovery performance (25 ns), thermal resistance (15 °C/W), RoHS-compliant lead-free plating, and SMB footprint compatibility with automated SMT assembly.

Technical Context

This device is a glass-passivated silicon junction rectifier optimized for high-frequency switching power supplies. Its 25 ns trr enables efficient operation in 100–500 kHz SMPS topologies while minimizing switching losses and EMI generation.

Rated for 3.0 A average output current at 100 °C terminal temperature, it sustains 100 A surge current (8.3 ms half-sine) and exhibits low 45 pF junction capacitance - critical for reducing capacitive coupling noise in isolated flyback and buck-derived converters.

Key Specifications

Pinout & Package

SMB (Surface Mount Small Outline) package: molded plastic case, UL 94V-0 rated, cathode marked by band or notch, solderable matte tin terminals, 0.093 g mass.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar super-fast rectifier applications.

Compared with STTH3L06S and MBR3200LSFT1G, ES3DB-13 uniquely balances 200 V rating, 25 ns speed, SMB footprint, and 150 °C max junction temperature - making it optimal for space-constrained, thermally demanding 100–200 VAC input power supplies where Schottky leakage or TO-277 mounting is unacceptable.

Availability

ES3DB-13 is available at Aetrix Electronics and suitable for AC/DC adapters, LED drivers, and USB-C PD power supplies requiring stable component supply, consistent SMB packaging, and RoHS-compliant manufacturing.

Supply support for ES3DB-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management and signal integrity solutions for consumer, industrial, and automotive markets.

The ES3x/ES3xB series targets cost-sensitive, high-volume power conversion applications where fast recovery, thermal robustness, and SMT manufacturability are essential - particularly in compact off-line SMPS designs.

FAQ

What is the maximum allowable junction temperature for ES3DB-13?

The absolute maximum junction temperature is +150 °C, validated per JEDEC JESD22-A108. Operation at this limit requires derated current per Figure 1 - at 150 °C terminal temperature, average current drops to ~1.8 A. Thermal design must maintain Tj ≤150 °C under worst-case load and ambient conditions.

Is ES3DB-13 compatible with lead-free reflow profiles?

Yes - ES3DB-13 uses matte tin plating qualified to J-STD-020C Level 1 moisture sensitivity and withstands peak reflow temperatures up to 260 °C for 30 seconds. No pre-bake is required, and its UL 94V-0 mold compound resists delamination during thermal cycling.

How does the 25 ns reverse recovery time impact EMI in a flyback converter?

A 25 ns trr limits reverse recovery charge (Qrr) to approximately 12.5 nC, reducing high-frequency ringing amplitude and spectral energy above 30 MHz. This directly eases compliance with EN 55032 Class B conducted emissions limits without increasing snubber component count or size.

Can ES3DB-13 replace a standard FR304 in an existing design?

Yes - ES3DB-13 shares identical SMB footprint and pinout with FR304, but offers 25 ns vs. 500 ns trr and 0.9 V vs. 1.3 V VF. Designers must verify that reduced reverse recovery stress doesn't cause unintended gate drive coupling in adjacent MOSFETs, especially in high-density layouts.