Taiwan Semiconductor Corporation ES3DBHM4G

Overview

ES3DBHM4G from Taiwan Semiconductor is a 3A, 200V super fast recovery surface-mount rectifier in DO-214AA (SMB) package, featuring 35ns reverse recovery time, 0.86V forward voltage at 3A/25°C, and 100A surge current capability. It serves as the output rectifier in high-frequency switching power supplies requiring low conduction loss and minimal switching noise.

For engineers reviewing the ES3DBHM4G datasheet, ES3DBHM4G pinout, ES3DBHM4G application, or ES3DBHM4G equivalent, key selection criteria include V_RRM = 200V, I_F = 3A, t_rr = 35ns, thermal resistance R_θJA = 84°C/W, and SMB package compatibility with automated SMT assembly lines.

Technical Context

This device is a single-die, unidirectional silicon rectifier optimized for high-efficiency DC-DC conversion. Its glass-passivated junction ensures stable performance under thermal cycling, while the matte tin-plated leads meet J-STD-002 solderability requirements.

The 35ns reverse recovery time enables operation in 100–500 kHz SMPS topologies without excessive switching losses. With a maximum junction temperature of 150°C and moisture sensitivity level 1 per J-STD-020, ES3DBHM4G supports reflow-compatible manufacturing and long-term reliability in thermally demanding environments.

Key Specifications

Pinout & Package

Package: DO-214AA (SMB), low-profile surface-mount case with cathode band polarity marking and UL 94V-0 compliant molding compound.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar super fast rectifier applications.

Compared with STTH3L02 and MUR320, ES3DBHM4G offers identical V_RRM/I_F ratings and matching t_rr, but delivers lower V_F at 125°C (0.84V vs. ≥0.89V), making it preferable for high-ambient industrial applications where conduction loss dominates thermal design.

Availability

ES3DBHM4G is available at Aetrix Electronics and suitable for AC-DC adapters, LED drivers, and industrial SMPS requiring stable component supply, consistent parametric performance, and full traceability across production batches.

Supply support for ES3DBHM4G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving global power electronics markets since 1979.

ES3DBHM4G belongs to TSC's ES3x series of super fast rectifiers-designed specifically for high-efficiency, high-frequency switching power supplies where low forward voltage and fast recovery are essential for minimizing total power loss.

FAQ

What is the maximum junction temperature rating for ES3DBHM4G?

The ES3DBHM4G has a maximum junction temperature (T_J) rating of +150°C, verified per absolute maximum ratings in the official Taiwan Semiconductor datasheet. This allows reliable operation in industrial environments where ambient temperatures reach 85°C and power dissipation generates significant self-heating. The device's R_θJA = 84°C/W on a 10mm × 10mm copper pad enables thermal design within this limit when average power remains below ~1.2W. Always refer to the derating curve in Figure 1 of the ES3AB–ES3JB datasheet for precise current limits at elevated temperatures.

Does ES3DBHM4G have a halogen-free construction?

Yes, ES3DBHM4G is halogen-free in accordance with IEC 61249-2-21, as explicitly stated in the FEATURES section of the Taiwan Semiconductor ES3AB–ES3JB datasheet. This compliance applies to both the molding compound and internal materials, supporting environmental regulations including EU RoHS and customer sustainability requirements. The "HM4G" suffix in ES3DBHM4G confirms halogen-free (H), green compound (G), and JEDEC-compliant marking (M4).

What is the reverse recovery time (t_rr) specification for ES3DBHM4G?

The reverse recovery time (t_rr) for ES3DBHM4G is specified as ≤35 ns under test conditions of I_F = 0.5A, I_R = 1.0A, and I_rr = 0.25A, per the ELECTRICAL SPECIFICATIONS table on page 2 of the ES3AB–ES3JB datasheet. This value is measured at T_A = 25°C and reflects the device's super fast recovery performance, critical for minimizing switching loss and voltage overshoot in high-frequency SMPS designs.

Is ES3DBHM4G compatible with standard reflow soldering processes?

Yes, ES3DBHM4G is fully compatible with standard lead-free reflow soldering processes. Its moisture sensitivity level (MSL) is rated Level 1 per J-STD-020, meaning it can be stored indefinitely at ≤30°C/60% RH and subjected to multiple reflow cycles without baking. The matte tin-plated leads meet J-STD-002 solderability requirements, ensuring consistent wetting and joint integrity across automated SMT lines.

What does the "DB" in ES3DBHM4G indicate?

The "DB" in ES3DBHM4G denotes the 200V repetitive peak reverse voltage (V_RRM) rating within the ES3x family-where "A" = 50V, "B" = 100V, "C" = 150V, "D" = 200V, "F" = 300V, "G" = 400V, "H" = 500V, and "J" = 600V. This coding is confirmed in the ABSOLUTE MAXIMUM RATINGS table on page 1 of the ES3AB–ES3JB datasheet, where ES3DB corresponds to V_RRM = 200V and VR(RMS) = 140V.