Taiwan Semiconductor Corporation ESH2D

Overview

ESH2D from Taiwan Semiconductor is a 2 A, 200 V ultra-fast surface-mount rectifier diode in DO-214AA (SMB) package, featuring 20 ns reverse recovery time, 0.9 V max forward voltage at 2 A, and 50 µA max reverse leakage at 125°C. It serves as a primary output rectifier in high-frequency switching power supplies requiring low conduction loss and fast transient response.

For engineers reviewing the ESH2D datasheet, ESH2D pinout, ESH2D application, or ESH2D equivalent, key selection criteria include peak repetitive reverse voltage rating (200 V), ultra-fast recovery performance (trr ≤ 20 ns), thermal resistance (R_θJA = 75 °C/W), and SMB package compatibility with automated SMT assembly lines.

Technical Context

The ESH2D operates as a single-die, unidirectional silicon rectifier with glass-passivated junction for enhanced reliability under thermal cycling and humidity stress. Its ultra-fast recovery enables operation in 100–500 kHz SMPS topologies without significant switching loss penalty.

Designed for surface-mount use in constrained board space, the DO-214AA (SMB) package delivers 20 °C/W junction-to-lead thermal resistance and supports reflow soldering per J-STD-002. Polarity is marked by cathode band; moisture sensitivity level is J-STD-020 Level 1.

Key Specifications

Pinout & Package

Package: DO-214AA (SMB), molded epoxy case with matte tin-plated leads, polarity indicated by cathode band, weight ≈ 0.090 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultra-fast rectifier applications.

Compared with STTH2R02 and ES2D, the ESH2D delivers the fastest recovery (20 ns) and lowest thermal resistance (75 °C/W) in the SMB package, making it optimal for compact, high-efficiency 200–500 kHz SMPS where minimal switching loss and board-level thermal management are critical.

Availability

ESH2D is available at Aetrix Electronics and suitable for switching mode power supplies, AC-DC adapters, and LED lighting drivers requiring stable component supply with consistent parametric performance across production lots.

Supply support for ESH2D includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated semiconductor manufacturer specializing in discrete power devices, including rectifiers, TVS diodes, and MOSFETs, with global distribution and AEC-Q200 qualified products.

The ESH2D belongs to TSC's ESH2x ultra-fast rectifier family, engineered specifically for high-frequency, high-efficiency AC-DC and DC-DC conversion in space-constrained industrial and consumer power systems.

FAQ

What is the maximum repetitive peak reverse voltage rating for ESH2D?

The ESH2D has a maximum repetitive peak reverse voltage (V_RRM) rating of 200 V, verified per Taiwan Semiconductor's J2102 datasheet. This rating defines the highest reverse voltage the device can block repeatedly without breakdown under normal operating conditions. Designers must ensure circuit transient voltages remain within this limit, including safety margins for ringing and overshoot. The ESH2D is not rated for sustained operation above 200 V reverse bias.

What is the forward voltage drop of ESH2D at its rated current?

The ESH2D exhibits a maximum forward voltage (V_F) of 0.9 V at 2 A and 25°C junction temperature, as specified in the electrical characteristics table. This value is measured under pulsed conditions (PW = 0.3 ms) to minimize self-heating. At elevated temperatures (e.g., 125°C), V_F decreases slightly due to semiconductor physics, but system-level thermal design must still account for worst-case conduction loss using the 25°C max spec.

Does ESH2D have a defined reverse recovery time, and how is it measured?

Yes, the ESH2D has a maximum reverse recovery time (t_rr) of 20 ns, measured under standardized conditions: I_F = 0.5 A, I_R = 1.0 A, and I_rr = 0.25 A. This parameter reflects the time required for minority carriers to clear after forward conduction ceases. The test circuit and waveform definitions are shown in Figure 6 of the ESH2B–ESH2D datasheet (J2102). Designers should use this value to calculate recovery-related switching losses in high-frequency topologies.

What package type does ESH2D use, and what are its mechanical identifiers?

The ESH2D uses the DO-214AA (SMB) surface-mount package, confirmed by mechanical data and ordering information in the J2102 datasheet. Key identifiers include a low-profile molded epoxy case meeting UL 94V-0, matte tin-plated leads compliant with J-STD-002 solderability, cathode polarity indicated by a visible band, and approximate weight of 0.090 g. The suggested pad layout and marking diagram are provided on page 5 of the same datasheet.

Is ESH2D suitable for automotive applications?

The ESH2D is not qualified to AEC-Q101 or designed for automotive under-hood applications. While it operates from −55°C to +175°C and meets RoHS/halogen-free standards, Taiwan Semiconductor's documentation explicitly states these devices are "not designed for use in medical, life-saving, or life-sustaining applications" and makes no automotive qualification claims. For automotive-grade alternatives, engineers should consult TSC's AEC-Q101-certified rectifier portfolio or verify qualification status directly with the manufacturer before deployment.