Taiwan Semiconductor Corporation ESH3B

Overview

ESH3B from Taiwan Semiconductor is a 100 V, 3 A ultra-fast recovery surface-mount rectifier in DO-214AB (SMC) package, featuring 20 ns reverse recovery time, 0.9 V forward voltage at 3 A, and 125 A peak surge current - used for high-frequency freewheeling and SMPS output rectification in telecom power supplies.

For engineers reviewing the ESH3B datasheet, ESH3B pinout, ESH3B application, or ESH3B equivalent, key selection criteria include repetitive peak reverse voltage (100 V), ultra-fast trr (≤20 ns), thermal resistance (R_θJL = 12 °C/W), RoHS/halogen-free compliance, and DO-214AB mechanical compatibility with automated SMT placement.

Technical Context

The ESH3B is a single-die, silicon planar junction rectifier with glass passivated chip construction, optimized for high-efficiency switching-mode operation. Its ultra-fast recovery (trr ≤20 ns) minimizes switching losses during turn-off in DC-DC converters and inverters.

Thermal design is supported by low junction-to-lead resistance (12 °C/W) and JESD201 Class 2 whisker-resistant matte tin plating. Polarity is marked by cathode band; moisture sensitivity level is J-STD-020 Level 1.

Key Specifications

Pinout & Package

Package: DO-214AB (SMC) - surface-mount, low-profile, UL 94V-0 molded case with cathode band polarity marking and matte tin-plated leads compliant with J-STD-002 solderability.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultra-fast rectifier applications.

Compared with VS-3EWH01-M3/45 and MUR310EG, the ESH3B delivers superior high-frequency performance (20 ns trr), lower thermal resistance, and guaranteed DO-214AB compatibility - making it optimal for space-constrained, >200 kHz telecom and server power designs requiring minimal BOM change.

Availability

ESH3B is available at Aetrix Electronics and suitable for telecom AC-DC adapters, server VRM output stages, and industrial PLC power supplies requiring stable component supply, J-STD-020 Level 1 moisture handling, and halogen-free compliance.

Supply support for ESH3B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated Taiwanese manufacturer specializing in discrete power semiconductors, including rectifiers, TVS diodes, and MOSFETs for industrial and computing markets.

The ESH3B belongs to TSC's ESH3x ultra-fast rectifier family, engineered specifically for high-efficiency, high-frequency switching power conversion in space- and thermal-constrained applications.

FAQ

What is the maximum repetitive peak reverse voltage rating for ESH3B?

The ESH3B has a maximum repetitive peak reverse voltage (V_RRM) of 100 V, verified per its absolute maximum ratings table. This rating defines the highest reverse voltage the device can block repeatedly without breakdown under normal operating conditions. Exceeding 100 V risks avalanche failure. The ESH3B is part of a family where ESH3C and ESH3D offer 150 V and 200 V respectively - always confirm V_RRM matches your circuit's worst-case reverse stress when selecting ESH3B.

What is the forward voltage drop of ESH3B at rated current?

The ESH3B exhibits a maximum forward voltage (V_F) of 0.9 V at 3 A and 25 °C junction temperature, per its electrical specifications. This value is measured under pulsed conditions (PW = 0.3 ms) to avoid self-heating effects. At elevated temperatures (e.g., 125 °C), V_F decreases slightly due to semiconductor physics. For thermal design, use the 0.9 V figure to calculate conduction loss in ESH3B-based power stages.

Does ESH3B have a defined reverse recovery time, and how is it measured?

Yes, the ESH3B has a specified reverse recovery time (t_rr) of ≤20 ns, measured under IF = 0.5 A, IR = 1.0 A, and Irr = 0.25 A conditions. This ultra-fast recovery is confirmed using standardized test circuits per JEDEC guidelines. The short t_rr directly reduces switching loss and EMI generation in high-frequency converters. Always reference the ESH3B datasheet's Figure 6 for the exact test setup when validating timing behavior in your schematic.

Is ESH3B compatible with lead-free reflow soldering processes?

Yes, ESH3B is fully compatible with lead-free reflow soldering. Its matte tin-plated leads meet J-STD-002 solderability requirements, and its DO-214AB package is rated for peak reflow temperatures up to 260 °C per J-STD-020 Level 1. No pre-baking is required. The ESH3B's UL 94V-0 molding compound also ensures flame resistance during reflow. Confirm profile adherence using the thermal characteristics section of the ESH3B datasheet.

What is the junction-to-lead thermal resistance of ESH3B, and why does it matter?

The ESH3B has a typical junction-to-lead thermal resistance (R_θJL) of 12 °C/W, enabling efficient heat transfer from the die directly to the PCB copper via the leads. This parameter is critical for thermal design because it determines how much temperature rise occurs across the die-to-copper path under steady-state conduction. A low R_θJL like that of ESH3B allows higher current handling without external heatsinks - especially valuable in dense, low-profile power modules where airflow is limited.